FOR USE BY ELECTRICIANS OVERSEAS : Bakes uiA5tGeR (New Transistor Manual) lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English translation key given below. RK BM (Tae 05'C) z OR Te) oe RS ph Bl A eee a Te (mA) Pee (nW ) JG () Tew SAH (aA y | Ve) WRK Ae ATOR ire | tues hea | hoe | fan i t # | Beet lho tf Val elma] Vent] ima] tow | toy |Gcio} Gr) | Ge) | o Meteo ely wry Pte = o ee TYPE NUMBER USES MAXIMUM RATINGS BOBS & ORIGINAL MANUFACTURER MATERIAL AND STRUCTURE Icoo MAXIMUM VALUE AND Ves VALUE (CRITERIA FOR MEASURING I czo ) S STANDARD VALUE OF DC/PULSE hee AND Vee I. ( CRITERIA FOR MEASURING DC/PULSE Are ) fl STANDARD VALUE OF kh PARAME- TERS AND BIAS Vee , Ie (CRITERIA FOR MEASURING A PARAMETERS) = oo iy [oo I | _g INDICATES VALUE IN GROUNDED- BASE OPERATION, OTHERWISE VALUE IN EMITTER-GROUNDED OPERATION. fas OF RF CHARACTERISTIC, EXCEPT IN CASE OF * WHICH INDICATES VALUE OF f-. Cos AND roy OF RF CHARACTERIS- TICS EXCEPT IN CASE OF * IN 1r,, COLUMN WHICH INDICATES VALUE OF hie (real) OUTLINE REMARKS :ta>7): COMPLEMENTARY TO -::-- _ a 236 Ho EB (Ts = BC) a % ft (Ta = 25C) [ 5 yw #)u &| mi alma | Voie | veo | tc | Pe | % | tcao RAM [MR zaps] <4 TF OR] hye | bie | fre | hoe | Sas | Con | O0 ie hist | hese | hoo | fr he(cead*) (V) | CV) | (mA) | (mw) | (C) | (HA) [Veatv) Ves(V)|Fe(mA) Vea(V)iTe(mA)) Aye* | (Q) [(X10-)! (aU) | (Me) | (PF) | (a) 2 acim Z|RF.LN |siE | 55 [ 5 | 100 | 200 | 150 [01 | ws [7 0f 6 | 2 | 6 | -1 go *| 6 49c 9 WOOA; EH 3L]PA Si.TMe | 200 | 6 | 2A {22:3 ) 150 | 1 | 30 | 100 | 10 | 50 | 10 | 50 20*} 95 | 20 | 267 nwa; ov | | 200 | 6 | 2A [22-5W) 50 | 1 | 30 | 100 | 10 | 50 | 10 | 50 20") 95 | 20 | 268 "MBA) on SW SiT | 1500] 6 | 5A | 22M.) 150 | ex, | 1500 15 | ~200 | <2.308 4 *| 175 102 AFR EL 4i6A| 3 | RF SiEP| 55 | 5 50 | 200 | 150 | 0.1 | 30 | 380 | 6 2 6 | -1 |NESAgB yo -ev.ie-o.ima) | 100") 3 | 45 | 195 reales 7 |RF.LN | 5 | 5 | 50 | 180 | 175 | 0.1 | 10 | so | s | 2 | 5 | 2 [ 5500 | 0.4 | 2 | 150%) 2.2 | 70 | m3 vutala x/Pasw [siz | so | 4 | 14 | fOM) 1560 | s | 50 [oo~m0/ 4 | 50 | 4 | 80 [t-=9%5eSiuv35us | 450") 30 34 = to ee 28CN03A) B | PA sr 250 | 7 | 100 0.1 | 150 | 80 | 10 | 10 | 30 | 10 80*) <4.8| 30 |84B oinals>y>|o [sitme| 200 | 6 | 10a 50 | ima | 200 | 60 | 4 | 3A] 12 | 500 10 *| 165 | 13 *] 102/2847478, ry ipl =] = *(sitMe | 1500] 5 | 9.8A 10 | 500 {| >10/ to | 1A | 10 | 800 |< 1ns 3 *| 95 | to | 10alaemrm rune) fo [1500] 5 | 7A 10 | 500 | 2 | 10 | 2a | 10 | S00] e38/ 10 | 7 | 0 | ~5 | 850") 3, | irc] | # QTA| Y=} PA s.TMe| 580 | 8 | 10 |\d25 | 150 | sma | soo | 60 | 3 | 0.1 | 10 | 500 | 5.5") 285 ; 102 " 7808 | 3K #1 Sw [sit | 150 | 5 | 30 | 400 | 125 | 0.1 | 150 |7~20) 3 | 10 | 10 | -2 0,348, y= 0.4uS 100*| 2 138 9798 n[RESW ; isi { too | 5 | 100 | 300 | 175 | 1 | 100 w~no| 1 | 10 | 10 | ~20 Sn 8. y= 30nS a0*| 3 49C 930A] " | 90 | 5 | 10 | 400 | 125 | 0.1 | 50 |ao~m0ol 1 | 10 | a0 | 10 | sra2enS, v3ns 250") 3 138 #10084 | @ | RF fon 100 | 8 | 700 | 800; 180 | 0.1 | 60 | 140 | 2 50 10 | 50 | | 70 "| 15 25 *| 84 |7SA7084 viosala [RF.AF |sitp| 250 | 5 | 2 | 300 [ ws | 2 | 2 | >a | io | 5 i "asc onah @)Pasw [sie | 70 | 5 | 3a [2M] 150 | 1 | as | 10 | 5 | 500 | 5 | 100/ | | 60 *| 40 | | 167 | 2546364,