VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 Doc. No. 5SYA1558-03 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance Maximum rated values 1) Parameter Symbol Collector-emitter voltage 25 C max Unit 6500 V IC Tc = 85 C 600 A Peak collector current ICM tp = 1 ms, Tc = 85 C 1200 A Gate-emitter voltage VGES 20 V 11900 W 600 A 1200 A 6000 A 10 s 10200 V 125 C DC forward current Peak forward current Surge current Ptot -20 Tc = 25 C, per switch (IGBT) IF IFRM IFSM VR = 0 V, Tvj = 125 C, tp = 10 ms, half-sinewave IGBT short circuit SOA tpsc VCC = 4400 V, VCEM CHIP 6500 V VGE 15 V, Tvj 125 C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Junction operating temperature Tvj(op) -50 125 C Case temperature Tc -50 125 C Storage temperature Tstg -50 125 C Mounting torques 2) VGE = 0 V, Tvj min DC collector current Total power dissipation 1) VCES Conditions 2) Ms Base-heatsink, M6 screws 4 6 Mt1 Main terminals, M8 screws 8 10 Mt2 Auxiliary terminals, M4 screws 2 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA2039 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Nm 5SNA 0600G650100 IGBT characteristic values 3) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 C 6500 Collector-emitter 4) saturation voltage VCE sat IC = 600 A, VGE = 15 V V Tvj = 125 C 5.4 5.9 V 12 mA 120 mA 500 nA 8.0 V Tvj = 25 C Gate leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 125 C -500 VGE(TO) IC = 240 mA, VCE = VGE, Tvj = 25 C 6.5 Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time td(on) Rise time Turn-off delay time tr td(off) Fall time Turn-on switching energy Turn-off switching energy Short circuit current Module stray inductance Resistance, terminal-chip 3) 4) tf Eon Eoff ISC L Tvj = 125 C 70 IC = 600 A, VCE = 3600 V, VGE = -15 V .. 15 V 7.4 8.0 C 143 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C 6.62 nF 1.27 VCC = 3600 V, IC = 600 A, RG = 3.9 , VGE = 15 V, L = 280 nH, inductive load Tvj = 25 C 640 Tvj = 125 C 570 Tvj = 25 C 270 Tvj = 125 C 240 Tvj = 25 C 1540 Tvj = 125 C 1860 Tvj = 25 C 620 Tvj = 125 C 960 VCC = 3600 V, IC = 600 A, VGE = 15 V, RG = 3.9 , L = 280 nH, inductive load Tvj = 25 C 3800 Tvj = 125 C 4900 VCC = 3600 V, IC = 600 A, VGE = 15 V, RG = 3.9 , L = 280 nH, inductive load Tvj = 25 C 1950 Tvj = 125 C 3150 VCC = 3600 V, IC = 600 A, RG = 3.9 , VGE = 15 V, L = 280 nH, inductive load tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 4400 V, VCEM CHIP 6500 V CE RCC'+EE' V 4.8 VCE = 6500 V, VGE = 0 V Qge Unit 4.2 ICES Gate charge max Tvj = 25 C Collector cut-off current Gate-emitter threshold voltage typ ns ns ns ns mJ mJ 2700 A 18 nH TC = 25 C 0.07 TC = 125 C 0.1 Characteristic values according to IEC 60747 - 9 Collector-emitter saturation voltage is given at chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1558-03 04-2012 page 2 of 9 5SNA 0600G650100 Diode characteristic values Parameter Forward voltage 5) Symbol VF 6) Reverse recovery current Qrr Reverse recovery time trr Reverse recovery energy 6) min IF = 600 A Irr Recovered charge 5) Conditions VCC = 3600 V, IF = 600 A, VGE = 15 V, RG = 3.9 L = 280 nH inductive load Erec typ max Tvj = 25 C 3.2 3.8 Tvj = 125 C 3.4 4.0 Tvj = 25 C 790 Tvj = 125 C 990 Tvj = 25 C 700 Tvj = 125 C 1200 Tvj = 25 C 1700 Tvj = 125 C 2200 Tvj = 25 C 1100 Tvj = 125 C 2200 Unit V A C ns mJ Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level Package properties 7) Parameter Symbol IGBT thermal resistance junction to case Rth(j-c)IGBT 0.011 K/W Diode thermal resistance junction to case Rth(j-c)DIODE 0.021 K/W Thermal resistance case to heatsink min Rth(c-s) Ve Comparative tracking index CTI max Unit per module, f = 50 Hz, QPD grease = 1W/m x K 0.006 K/W 10pC (acc. to IEC 61287) 5100 V 600 For detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties Parameter Dimensions 7) Symbol x L W x Conditions H Typical , see outline drawing min typ x max x 190 140 48 Clearance distance in air da according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 40 Surface creepage distance ds according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 64 Mass m 7) typ 2) Partial discharge extinction voltage 2) Conditions Unit mm mm 26 mm 56 1760 g Package and mechanical properties according to IEC 60747 - 15 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1558-03 04-2012 page 3 of 9 5SNA 0600G650100 Electrical configuration 5 7 9 4 6 8 3 2 1 Outline drawing 2) Note: all dimensions are shown in mm 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1558-03 04-2012 page 4 of 9 5SNA 0600G650100 1200 1200 VCE = 20 V 1000 1000 25 C 800 800 IC [A] IC [A] 125 C 600 400 600 400 25 C 125 C 200 200 VGE = 15V 0 0 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 VCE [V] Fig. 1 6 7 8 9 10 11 12 13 VGE [V] Fig. 2 Typical on-state characteristics, chip level 1200 Typical transfer characteristics, chip level 1200 17V 1000 1000 15V 13V 17V 800 15V 13V 600 IC [A] IC [A] 800 11V 400 11V 600 400 9V 200 200 9V Tvj = 25 C Tvj = 125 C 0 0 0 1 2 3 4 5 6 7 8 0 VCE [V] Fig. 3 Typical output characteristics, chip level 1 2 3 4 5 6 7 8 9 10 VCE [V] Fig. 4 Typical output characteristics, chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1558-03 04-2012 page 5 of 9 5SNA 0600G650100 14 20 VCC = 3600 V RG = 3.9 ohm VGE = 15 V Tvj = 125 C L = 280 nH 12 16 14 Eon, Eoff [J] Eon, Eoff [J] 10 VCC = 3600 V IC = 600 A VGE = 15 V Tvj = 125 C L = 280 nH 18 8 Eon 6 12 10 8 6 Eoff 4 Eon Eoff 4 2 2 -6 2 -3 Esw [J] = 6.77 x 10 x I C + 6.6 x 10 x I C + 1.52 0 0 0 300 600 900 1200 0 10 IC [A] Fig. 5 Typical switching energies per pulse vs collector current Fig. 6 40 Typical switching energies per pulse vs gate resistor 10 td(off) VCC = 3600 V RG = 3.9 ohm VGE = 15 V Tvj = 125 C L = 280 nH td(on) td(on), tr, td(off), tf [s] td(off) tf 1 td(on) tr 1 tf VCC = 3600 V IC = 600 A VGE = 15 V Tvj = 125 C L = 280 nH tr 0.1 0.1 0 300 600 900 0 1200 Typical switching times vs collector current 10 20 30 40 RG [ohm] IC [A] Fig. 7 30 RG [ohm] 10 td(on), tr, td(off), tf [s] 20 Fig. 8 Typical switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1558-03 04-2012 page 6 of 9 5SNA 0600G650100 1000 20 VGE = 0V fOSC = 1 MHz VOSC = 50 mV VCC = 3600 V Cies 15 C [nF] VGE [V] 100 10 Coes 10 5 Cres IC = 600 A Tvj = 25 C 0 1 0 Fig. 9 5 10 15 20 VCE [V] 25 30 0 35 Typical capacitances vs collector-emitter voltage Fig. 10 1 2 3 4 Qg [C] 5 6 7 Typical gate charge characteristics 2.5 VCC 4400 V, Tvj = 125 C, VGE = 15 V RGoff = 3.9 ohm, L 280 nH 2 ICpulse / IC 1.5 1 0.5 Chip Module 0 0 Fig. 11 1000 2000 3000 4000 VCE [V] 5000 6000 7000 Turn-off safe operating area (RBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1558-03 04-2012 page 7 of 9 5SNA 0600G650100 3000 2500 2000 1500 Erec RG = 27 ohm Irr 500 500 -3 2 Erec [mJ] = -1.2 x 10 x I F + 3.43 x I F + 530 0 RG = 15 ohm 1000 Irr 1000 RG = 8.2 ohm Erec [mJ] 1500 RG = 5.6 ohm Qrr 1000 800 600 400 VCC = 3600 V IF = 600 A Tvj = 125 C L = 280 nH 200 0 0 300 600 900 1200 Qrr [C], Irr [A] Qrr 2000 0 0 1 IF [A] Fig. 12 RG = 2.7 ohm Erec RG = 3.9 ohm 2500 Erec [mJ], Qrr [C], Irr [A] 1200 VCC = 3600 V RG = 3.9 ohm Tvj = 125 C L = 280 nH 2 3 4 di/dt [kA/s] Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 1400 1200 VCC 4400 V di/dt 4000 A/s Tvj = 125 C L 280 nH 1200 1000 1000 25 C 800 800 IR [A] IF [A] 125 C 600 600 400 400 200 200 0 0 0 1 2 3 4 0 5 Fig. 14 Typical diode forward characteristics, chip level 1000 2000 3000 4000 5000 6000 7000 VR [V] VF [V] Fig. 15 Safe operating area diode (SOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1558-03 04-2012 page 8 of 9 5SNA 0600G650100 0.1 Analytical function for transient thermal impedance: n R i (1 - e -t/ i ) Z th (j-c) (t) = 0.01 i 1 0.001 i 1 2 IGBT Zth(j-c) IGBT Ri(K/kW) 8.5 2 151 5.84 DIODE Zth(j-c) [K/W] IGBT, DIODE Zth(j-c) Diode Ri(K/kW) 17 4.2 144 5.83 i(ms) i(ms) 3 4 5 0.0001 0.001 Fig. 16 0.01 0.1 t [s] 1 10 Thermal impedance vs time ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1558-03 04-2012