1N957B THRU 1N992B 0.5W SILICON ZENER DIODES VOLTAGE RANGE 6.8 to 200 Volts FEATURES * 6.8 to 200V zener voltage range ____ * Metallurgically bonded device types DO-35 * Consult factory for voltages above 200V 4 6. MECHANICAL CHARACTERISTICS a * CASE: Hermetically sealed glass case.DO - 35. 9.090 WAX, f * FINISH: All extemal surfaces are corrosion resistant and leads solder- 000 able. 38400". * THERMAL RESISTANCE: 200C/W( Typical) junction to lead at 0.375 | inches from body. Metallurgically bonded DO 35, exhibit less than | 100C/W at zero distance from body. ~ 1 * POLARITY: banded end is cathode. ths, * WEIGHT:0.2 grams * MOUNTING POSITIONS: Any 1.000 syn * 25.41 } pa570339 0% MAXIMUM RATINGS aes | Steady State Power Dissipation: 500mW Operating and Storage temperature; 65Cto + 175C a nee Derating Factor Above 50C :4.0mWw/C All ditnensions in "rim Forward Voltage @ 200mA;:1.5 Volts ELECTRICAL CHARCTERISTICS @ 25C NOMINAL MAX.DC | MAX. SURGE MAX JEDEC, | | ZENER ZENER | MAX. ZERER IMPEDANCE ZENER CURRENT REVERSE |ssax Temp.| NOTE 1 The JEDEC type numbers Mice led CURFENT| ext | ZKOZK ee | eRe) | GunMeNT [COEFFICIENT] shown(B suffix) have a+ 5% tol- VZ 27 Imm Iz(SURGE) in @ir erance on nomina! zener voltage . VOLTS mA OHMS | OHMS mA mA mA pA | VOLTS) %/C The suffix A is used to identify + iNS67B 6.8 18.5 45 7 10 55 300 150 | 5.2 +0,05 10% tolerance; suffix C is uses to : 16. : : SO 275 | 57 : identify + 2%; and ix D is 1NO5SB 82 15.0 6.5 700 5 45 250 bo | 6.2 0.085 a naik 1N360B 9.1 14.0 75 700 5 a 2B | 69 +0088 used to identify + 1% tolerance; 1N961B 10 12.5 8.5 700 B 3 200 10 | 7.6 +0.075 ho suffix indicatex + 20% toler- wey ou [ue fas| @ i) 2) 8 | Be [est] ear | om. 1Ne64B 3 9.5 3.0 700 2 2 150 5 | 9.9 0,073, NOTE 2 Zener voltage ( Vz ) is : : 130 5 | 11.4 : iNS66B 6 78 i 700 zB 4 120 3 | 122 | +0.063 measured after the test current 1N367B 18 7.0 21 750 25 20 110 5 | 13.7 | 40.085 has been applied for 20 +5 sec- 1NSBBB 2 6.2 % 70 B 8 190 8 18.2 + 9.088 onds. The device shall be sus- . 7 . 1 . -087 t 7 in- 1N970B 24 5.2 B 750 9 16 80 5 | 182) +008 pended by its leads with the in 1N971B 27 46 4 750 2 B 70 5 | 206 | +0.090 side edge of the mounting clips 1N972B x 42 ES #009 B 12 & 5 2.8 +0.091 between. 375 and. 500 from the : : u : +0. body. Mounting clips shall be 1N974B 36 3.4 70 1000 5 10 5 5 | 27.4 0.098 ve 1N975B 39 3.2 80 1000 2B 9.5 46 5 | 20.7 0.04 maintained at a temperature of 25 1N976B 4B 3.0 3 1500 B 8.8 44 5 | 32.7 | +0.005 +8/-2T, 1N977B 47 2.7 105 1500 2 7.9. 40 5 35.8 +0.006 NOTE 3 The zener impedance is 1N978B 51 2.5 125 1500 25 TA 37 5 | 33.8 0.096 : N98 2.2 180 2000 2B 68 35 5 | 42.6 + 0.06 derived from the 60 cycle A.C. . . 6.0 9 5 47.1 097 i 1NSB1B C2) 1.8 20 2000 125 5.5 28 5 | 51.7 | 30.097 Cae henge RMS. a 1NSG2B 7 17 270 2000 25 5.0 26 5 | $6.0 0.098 : Pains INSESB & 1.5 0 000 2 46 B 3 | a2 | 10.08 ue equal to 10% of the D.C. zener 1 14 : 41 a 5 | 69.2 0.099 j im- 1NOB5B 400 13 500 3000 26 3.7 18 3 | 70 | 40.11 current (Izr or Iz) is superim 1NS86B 110 11 750 4000 25 3.3 16 5 | 86 +0.11 posed on Izy or Izy; . Zener imped- 7NOS7B 720 7.0 900 4500 5 3.1 15 5 | 91.2 0.11 i i i 1NOS8B 130 0.5 1100 5000 125 2.7 3 5 | ee! +o. ance is measured at 2 points to Wes | 8) $3 | SB] SB] S| as] | eB) Teh | Seeeaset ae chminate un: 1N991B 180 0.68 2200 7100 25 2.0 10 8 | 18; +0011 down curve and to eliminate un- B 200 OS 2500 S000 0.25 LB _2 5 11620) +074 stable units. * JEDEC Registered Data NOTE 4 The values of Izy are calculated for a + 5% tolerance on nominal zener voltage. Aliowance has been made for the rise in zener voltage above Vz; which results from zener impedance and the increase in junction temperature as power dissipation approaches 400mW. In the case of individua! diodes Izy is that value of current which results in a dissipation of 400 mW at 75Clead temperature at 3/8 from body. NOTE 5 Surge is 1/2 square wave or equivalent sine wave pulse of 1/120 sec. duration. JINAN GUDE ELECTRONIC DEVICE CO., LTD. RATINGS AND CHARACTERISTIC CURVES (1N957B THRU 1N992B) 200 = ~ a 4 VOLTAGE TEMPERATURE COEFFICIENT%4/C 150 mV CHANGE /C 25 TEMPERATURE COEFFICIENT (%/'c) JJAW IN3IDIS4309 AHNLVHSd WA NOMINAL ZENER VOLTAGE (V) FIGURE 1 ZENER VOLTAGE TEMPERATURE COEFF. vs. ZENER VOLTAGE 20 at zero TYPICAL CAPACITANCE (pF) WW BR UD~IDOO Nn 500 a Q Qo 300 nM Q a 100 RATED POWER DISSIPATION (mW) % 25 50 75 100 125 150175 LEAD TEMPERATURE T, (C} 3/8" FROM BODY FIGURE 2 POWER DERATING CURVE 0 20 40 60 80 100 120 140 160 180 200220 ZENER VOLTAGE Vz() FIGURE 3 CAPACITANCE vs. ZENER VOLTAGE (TYPICAL) JINAN GUDE ELECTRONIC DEVICE CO., LTD.