MHPA19010N - Freescale Semiconductor / Motorola

MHPA19010N

RF Device Data

Freescale Semiconductor

PCS Band

RF Linear LDMOS Amplifier

Designed for Class AB amplifier applications in 50 ohm systems operating in

the PCS frequency band. A silicon FET design provides outstanding linearity

and gain. In addition, the excellent group delay and phase linearity characteris-

tics are ideal for digital modulation systems, such as TDMA and CDMA.

•Typical CDMA Performance: 1960 MHz, 28 Volts

IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13

•Adjacent Channel Power: -51 dBc @ 30 dBm, 885 kHz Channel Spacing

•Power Gain: 24.5 dB Min (@ f = 1960 MHz)

•0.2 dB Typical Gain Flatness

Features

•Excellent Phase Linearity and Group Delay Characteristics

•Ideal for Feedforward Base Station Applications

•N Suffix Indicates Lead-Free Terminations

Table 1. Maximum Ratings (TC = 25°C unless otherwise noted)

Rating Symbol Value Unit

DC Supply Voltage VDD 30 Vdc

RF Input Power (Single Carrier CW) Pin +20 dBm

Storage Temperature Range Tstg - 40 to +100 °C

Operating Case Temperature Range TC- 20 to +100 °C

Quiescent Bias Current IDQ 750 mA

Table 2. Electrical Characteristics (VDD = 28 Vdc, VBIAS ≅ 8 V Set for Supply Current of 600 mA, TC = 25°C, 50 Ω System)

Characteristic Symbol Min Typ Max Unit

Supply Current IDD — 600 — mA

Power Gain (f = 1960 MHz) Gp24.5 25 — dB

Gain Flatness (f = 1930 - 1990 MHz) GF— 0.2 0.5 dB

Power Output @ 1 dB Comp. (f = 1960 MHz) P1dB — 41.5 — dBm

Input VSWR (f = 1930 - 1990 MHz) VSWRin — 1.5:1 2:1

Noise Figure (f = 1960 MHz) NF — 8 10 dB

Adjacent Channel Power Rejection @ 30 dBm, 1.23 MHz BW,

885 kHz Channel Spacing

ACPR — -58 -51 dBc

Document Number: MHPA19010N

Rev. 6, 5/2006

Freescale Semiconductor

Technical Data

MHPA19010N

1930-1990 MHz

10 W, 24.5 dB

RF HIGH POWER LDMOS AMPLIFIER

CASE 301AP-02, STYLE 3

RF Device Data

Freescale Semiconductor

MHPA19010N

TYPICAL CHARACTERISTICS

1990

−30

1930

IRL

Gps

ORL

f, FREQUENCY (MHz)

Figure 1. Two-Tone Power Gain, Input Return

Loss and Output Return Loss versus Frequency

IRL/ORL, INPUT/OUTPUT RETURN LOSS (dB)

VDD = 28 Vdc

Pout = 5 W

IDQ = 600 mA

100 kHz Tone Spacing

527

026

−5 25

−10 24

−15 23

−20 22

−25 21

1940 1950 1960 1970 1980

Gps, POWER GAIN (dB)

2000

1920

Gps

f, FREQUENCY (MHz)

Figure 2. 2-Carrier CDMA Power Gain and Efficiency

versus Frequency

Gps, POWER GAIN (dB)

, DRAIN EFFICIENCY (%)η

2−Carrier CDMA

Carrier Spacing = 2.5 MHz

Carrier Bandwidth = 1.2288 MHz

1930 1940 1950 1960 1970 1980 1990

27 18

26 16

25 14

24 12

23 10

22 8

21 6

VDD = 28 Vdc

Pout = 1 W (Avg.)

IDQ = 600 mA

−10_C

85_C

−10_C

25_C

85_C

TC = 25_C

ACPR

2000

−60

−35

1920

−70

−20

f, FREQUENCY (MHz)

Figure 3. 2-Carrier CDMA IM3 and ACPR

versus Frequency

ACPR, ADJACENT CHANNEL POWER RATIO (dBc)

ACPR @ 885 kHz, Bandwidth = 30 kHz

IM3 @ 2.5 MHz, Bandwidth = 1.2288 MHz

VDD = 28 Vdc, POUT = 1 W (Avg.), IDQ = 600 mA

85_C

−10_C

25_C

85_C

IM3

25_C

2−Carrier CDMA, Carrier Spacing = 2.5 MHz

Carrier Bandwidth = 1.2288 MHz

TC = −10_C

−40 −30

−45 −40

−50 −50

−55 −60

1930 1940 1950 1960 1970 1980 1990 40

−60

−25

100 kHz

Pout, OUTPUT POWER (dBm) PEP

Figure 4. Two-Tone CDMA IMD versus Output

Power

INTERMODULATION DISTORTION (dBc)IMD,

VDD = 28 Vdc, IDQ = 600 mA

100 kHz: f1 = 1959.95 MHz

f2 = 1960.05 MHz

10 MHz: f1 = 1955 MHz

f2 = 1965 MHz

35302520

−30

−35

−40

−45

−50

−55

10 MHz

−60

−25

IDQ = 800 mA

500 mA

Pout, OUTPUT POWER (dBm) PEP

Figure 5. Third Order Intermodulation Distortion

versus Output Power

IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc)

VDD = 28 Vdc

f1 = 1959.95 MHz

f2 = 1960.05 MHz

700 mA

600 mA

−30

−35

−40

−45

−50

−55

35302520

−5

23.5

27.5

Gps

PIN, (dBm)

Figure 6. CW Output Power, Efficiency and Gain

versus Input Power

, DRAIN EFFICIENCY (%), ηPout OUTPUT POWER (dBm)

VDD = 28 Vdc

IDQ = 600 mA

f = 1960 MHz

Pout

Gps, POWER GAIN (dB)

0 5 10 15 20

42 27

36 26.5

30 26

24 25.5

18 25

12 24.5

624

IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc)

MHPA19010N

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

−80

−30

IM3

ACPR

Pout, OUTPUT POWER (dBm)

Figure 7. 2-Carrier CDMA ACPR, IM3 and Efficiency

versus Output Power

IM3 (dBc), ACPR (dBc)

, DRAIN EFFICIENCY (%)η

VDD = 28 Vdc

IDQ = 600 mA

f1 = 1960 MHz

f2 = 1962.5 MHz

−35 9

−40 8

−45 7

−50 6

−55 5

−60 4

−65 3

−70 2

−75 1

3025201510

RF Device Data

Freescale Semiconductor

MHPA19010N

NOTES

MHPA19010N

RF Device Data

Freescale Semiconductor

NOTES

RF Device Data

Freescale Semiconductor

MHPA19010N

NOTES

MHPA19010N

RF Device Data

Freescale Semiconductor

PACKAGE DIMENSIONS

NOTES:

1. INTERPRET DIMENSIONS AND TOLERANCES

PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION "F" TO CENTER OF LEADS.

0.020 (0.51) TM

0.020 (0.51) T

12 34

SEATING

PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.760 1.780 44.70

B1.370 1.390 34.80 35.31

C0.245 0.265 6.22 6.73

D0.017 0.023 0.43 0.58

E0.080 0.100 2.03 2.54

F0.086 BSC 2.18 BSC

G1.650 BSC 41.91 BSC

H1.290 BSC 32.77 BSC

J0.266 0.280 6.76 7.11

K0.125 0.165 3.18 4.19

L0.990 BSC 25.15 BSC

0.390 BSC 9.91 BSCN

0.118 0.132 3.00 3.35Q

R0.535 0.555 13.59 14.10

S0.445 0.465 11.30 11.81

45.21

CASE 301AP- 02

ISSUE E

0.020 (0.51) TM

0.008 (0.20) A M

0.090 BSC 2.29 BSC

0.008 0.013 0.20 0.33

STYLE 3:

PIN 1. RF INPUT

2. VBIAS

3. VDD

4. RF OUTPUT

CASE: GROUND

D4X

Q2X

Note: VDD (Pin 3) should always be applied before VBIAS (Pin 2).

RF Device Data

Freescale Semiconductor

MHPA19010N

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Document Number: MHPA19010N

Rev. 6, 5/2006

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