DS30203 Rev. B-2 1 of 1 BSS138DW
BSS138DW
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
·Low On-Resistance
·Low Gate Threshold Voltage
·Low Input Capacitance
·Fast Switching Speed
Maximum Ratings @ TA= 25°C unless otherwise specified
Characteristic Symbol BSS138DW Units
Drain-Source Voltage VDSS 50 V
Drain-Gate Voltage (Note 3) VDGR 50 V
Gate-Source Voltage Continuous VGSS ±20 V
Drain Current (Note 1) Continuous ID200 mA
Total Power Dissipation (Note 1) Pd200 mW
Thermal Resistance, Junction to Ambient RqJA 625 °C/W
Operating and Storage Temperature Range Tj,T
STG -55 to +150 °C
·Case: SOT-363, Molded Plastic
·Terminals: Solderable per MIL-STD-202,
Method 208
·Terminal Connections: See Diagram
·Marking: KXX: Product marking code
YY: Date code
·Marking Code: K38
·Weight: 0.006 grams (approx.)
Mechanical Data
A
M
JL
FD
BC
H
K
KXX YY
G1S1
S2G2D1
D2
KXX YY
Electrical Characteristics @ TA= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage BVDSS 50 75 ¾VV
GS = 0V, ID= 250mA
Zero Gate Voltage Drain Current IDSS ¾¾0.5 µA VDS = 50V, VGS = 0V
Gate-Body Leakage IGSS ¾¾±100 nA VGS =±20V, VDS = 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(th) 0.5 1.2 1.5 V VDS =V
GS, ID=-250mA
Static Drain-Source On-Resistance RDS (ON) ¾1.4 3.5 WVGS = 10V, ID= 0.22A
Forward Transconductance gFS 100 ¾¾mS VDS =25V, ID= 0.2A, f = 1.0KHz
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ¾¾50 pF
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ¾¾25 pF
Reverse Transfer Capacitance Crss ¾¾8.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) ¾¾20 ns VDD = 30V, ID= 0.2A,
RGEN = 50W
Turn-Off Delay Time tD(OFF) ¾¾20 ns
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width £300ms, duty cycle £2%.
3. RGS £20KW.
SOT-363
Dim Min Max
A0.10 0.30
B1.15 1.35
C2.00 2.20
D0.65 Nominal
F0.30 0.40
H1.80 2.20
J¾0.10
K0.90 1.00
L0.25 0.40
M0.10 0.25
All Dimensions in mm
