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Phase Control Thyristors VRRM = 800-1200 V
IT(RMS) = 25 A
IT(AV)M = 16 A
VRSM VRRM Type
VDSM VDRM
VV
900 800 CS 8-08io2
1300 1200 CS 8-12io2
Symbol Test Conditions Maximum Ratings
IT(RMS) TVJ = TVJM 25 A
IT(AV)M Tcase = 85°C; 180° sine 16 A
ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 250 A
VR = 0 t = 8.3 ms (60 Hz), sine 270 A
TVJ = TVJM t = 10 ms (50 Hz), sine 200 A
VR = 0 t = 8.3 ms (60 Hz), sine 220 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 310 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 306 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 200 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 200 A2s
(di/dt)cr TVJ = TVJM repetitive, IT = 48 A 150 A/ms
f = 50 Hz, tP =200 ms
VD = 2/3 VDRM
IG = 0.2 A non repetitive, IT = IT(AV)M 500 A/ms
diG/dt = 0.2 A/ms
(dv/dt)cr TVJ = TVJM;V
DR = 2/3 VDRM 1000 V/ms
RGK = ¥; method 1 (linear voltage rise)
PGM TVJ = TVJM tP = 30 ms10W
IT = IT(AV)M tP = 300 ms5W
PG(AV) 0.5 W
VRGM 10 V
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
MdMounting torque 2.5 Nm
22 lb.in.
Weight 6g
Features
●Thyristor for line frequencies
●International standard package
JEDEC TO-64
●Planar glassivated chip
●Long-term stability of blocking
currents and voltages
Applications
●Motor control
●Power converter
●AC power controller
Advantages
●Space and weight savings
●Simple mounting
●Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
CS 8
12
3
1 = Anode, 2 = Cathode, 3 = Gate
TO-64 2
3
M5
1
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© 2000 IXYS All rights reserved 2 - 3
CS 8
0.0 0.5 1.0 1.5 2.0
0
10
20
30
40
50
10-2 10-1 100101
10-1
100
101
102
0 255075
0
1
2
3
4
IT
tgd
V
G
V
IGtVT
A
m
s
mA AV
Symbol Test Conditions Characteristic Values
IR, IDTVJ = TVJM; VR = VRRM; VD = VDRM £3mA
VTIT= 33 A; TVJ = 25°C£1.6 V
VT0 For power-loss calculations only (TVJ = 125°C) 1.0 V
rT18 mW
VGT VD = 6 V; TVJ = 25°C£2.5 V
TVJ = -40°C£3.5 V
IGT VD = 6 V; TVJ = 25°C£30 mA
TVJ = -40°C£50 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM £0.2 V
IGD £1mA
ILTVJ = 25°C; tP = 10 ms£100 mA
IG = 0.09 A; diG/dt = 0.09 A/ms
IHTVJ = 25°C; VD = 6 V; RGK = ¥ £ 80 mA
tgd TVJ = 25°C; VD = 1/2 VDRM £2ms
IG = 0.09 A; diG/dt = 0.09 A/ms
tqTVJ = TVJM; IT = 16 A, tP = 300 ms; di/dt = -20 A/ms typ. 60 ms
VR = 100 V; dv/dt = 20 V/ms; VD = 2/3 VDRM
RthJC DC current 1.5 K/W
RthJH DC current 2.5 K/W
dSCreepage distance on surface 1.55 mm
dAStrike distance through air 1.55 mm
aMax. acceleration, 50 Hz 50 m/s2
Accessories:
Nut M5 DIN 439/SW8
Lock washer A5 DIN 128
Fig. 1 Gate voltage and gate current
Triggering:
A = no; B = possible; C = safe
Fig. 2 Gate controlled delay time tgd Fig. 3 On-state characteristics
B
BC
B
lim.
typ.
typ. lim.
TVJ= 125°C
TVJ= 25°C
IGD: TVJ= 25°C
IGD: TVJ=125°C
A
IGT: TVJ= 25°C
IGT: TVJ= 0°C
IGT: TVJ= -40°C
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© 2000 IXYS All rights reserved 3 - 3
0 50 100 150
0
5
10
15
20
23456789110
200
400
600
800
100
1000
10-3 10-2 10-1 100101
0
50
100
150
200
250
300
0 5 10 15 20 25 30
0
10
20
30
40
50 100 150
0
10-3 10-2 10-1 100101102103
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IT(AV)M
I2t
ITSM
A
ttTc
PT
W
IT(AV)M
ATamb
ts
ZthJH
K/W
A
A2s
s
°C
ms °C
CS 8
Fig. 7 Power dissipation versus on-state current and ambient temperature
Fig. 4 Surge overload current
ITSM: crest value, t: duration Fig. 5 I2t versus time (1-10 ms) Fig. 6 Maximum forward current at
case temperature 180° sine
Fig. 8 Transient thermal impedance junction to heatsink
RthJH for various conduction angles d:
dR
thJH (K/W)
DC 2.5
180°2.79
120°2.95
60°3.17
30°3.32
Constants for ZthJH calculation:
iR
thi (K/W) ti (s)
1 0.252 0.005
2 0.333 0.0225
3 0.5 0.145
4 0.833 0.43
5 0.416 2.75
6 0.166 23
50Hz, 80%VRRM
TVJ = 45°C
TVJ = 125°C
VR = 0 V
DC
180° sin
120°
60°
30°
d = DC
d = 180°
d = 120°
d = 60°
d = 30°
TVJ = 45°C
TVJ = 125°C
RthJA :
2.8 K/W
3.2 K/W
3.6 K/W
3.6 K/W
5.2 K/W
7 K/W
ase
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