BSM300GA120DN2E3166 IGBT Power Module Preliminary data * Single switch * Including fast free-wheeling diodes * Enlarged diode area * Package with insulated metal base plate Type VCE BSM300GA120DN2E3166 1200V 430A IC Package Ordering Code SINGLE SWITCH 1 C67070-A2007-A70 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 k Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC 20 A TC = 25 C 430 TC = 80 C 300 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 860 TC = 80 C 600 Power dissipation per IGBT W Ptot TC = 25 C 2500 Chip temperature Tj + 150 Storage temperature Tstg Thermal resistance, chip case RthJC 0.05 Diode thermal resistance, chip case RthJCD 0.065 Insulation test voltage, t = 1min. Vis Creepage distance C -40 ... + 125 K/W 2500 Vac - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 1 sec 40 / 125 / 56 Oct-27-1997 BSM300GA120DN2E3166 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage V VGE(th) VGE = VCE, IC = 12 mA 4.5 5.5 6.5 VGE = 15 V, IC = 300 A, Tj = 25 C - 2.5 3 VGE = 15 V, IC = 300 A, Tj = 125 C - 3.1 3.7 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) mA ICES VCE = 1200 V, VGE = 0 V, Tj = 25 C - 4 5.6 VCE = 1200 V, VGE = 0 V, Tj = 125 C - 16 - Gate-emitter leakage current nA IGES VGE = 20 V, VCE = 0 V - - 320 AC Characteristics Transconductance VCE = 20 V, IC = 300 A Input capacitance 124 nF - 22 - - 3.3 - - 1.2 - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S gfs Crss VCE = 25 V, VGE = 0 V, f = 1 MHz 2 Oct-27-1997 BSM300GA120DN2E3166 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 300 A RGon = 3.3 Rise time - 100 200 - 110 220 - 600 800 - 80 120 tr VCC = 600 V, VGE = 15 V, IC = 300 A RGon = 3.3 Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 300 A RGoff = 3.3 Fall time tf VCC = 600 V, VGE = -15 V, IC = 300 A RGoff = 3.3 Free-Wheel Diode Diode forward voltage V VF IF = 300 A, VGE = 0 V, Tj = 25 C 1.4 1.8 2.3 IF = 300 A, VGE = 0 V, Tj = 125 C - 1.35 - Reverse recovery time s trr IF = 300 A, VR = -600 V, VGE = 0 V diF/dt = -2500 A/s, Tj = 125 C Reverse recovery charge - 0.6 C Qrr IF = 300 A, VR = -600 V, VGE = 0 V diF/dt = -2500 A/s Tj = 25 C - 16 - Tj = 125 C - 45 - 3 Oct-27-1997 BSM300GA120DN2E3166 Power dissipation Ptot = (TC) parameter: Tj 150 C Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 4 2600 W A 2200 Ptot IC 2000 t = 19.0s p 10 3 1800 1600 100 s 1400 10 2 1200 1000 1 ms 800 10 1 10 ms 600 400 200 DC 0 0 20 40 60 80 100 120 C 10 0 0 10 160 10 1 10 2 10 3 TC Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T IGBT 10 0 500 K/W A IC V VCE 400 ZthJC 10 -1 350 10 -2 300 250 D = 0.50 10 200 -3 0.20 0.10 150 0.05 10 -4 100 single pulse 0.02 0.01 50 0 0 20 40 60 80 100 120 C 160 TC 10 -5 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Oct-27-1997 BSM300GA120DN2E3166 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 125 C 600 600 A 500 IC 450 400 A 17V 15V 13V 11V 9V 7V 500 IC 450 400 350 350 300 300 250 250 200 200 150 150 100 100 50 50 0 17V 15V 13V 11V 9V 7V 0 0 1 2 3 V 5 0 VCE 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 600 A 500 IC 450 400 350 300 250 200 150 100 50 0 0 2 4 6 8 10 V 14 VGE 5 Oct-27-1997 BSM300GA120DN2E3166 Typ. capacitances Typ. gate charge VGE = (QGate) parameter: IC puls = 300 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 2 20 V nF VGE 16 Ciss C 600 V 14 800 V 10 1 12 10 Coss 8 Crss 10 0 6 4 2 0 0 10 -1 0 200 400 600 800 1000120014001600 nC 2000 5 10 15 20 25 30 V VCE QGate 40 Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V, tp 1 ms, L < 20 nH ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 20 nH 2.5 12 ICpulsIC ICsc/IC di/dt = 1000A/s 3000A/s 5000A/s 8 di/dt = 1000A/s 3000A/s 5000A/s 1.5 6 1.0 4 allowed number of short circuit: <1000 time between short 2 circuit: >1s 0.5 0.0 0 200 400 600 800 1000 1200 V 1600 VCE 6 0 0 200 400 600 800 1000 1200 V 1600 VCE Oct-27-1997 BSM300GA120DN2E3166 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C t = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 3.3 par.: VCE = 600 V, VGE = 15 V, IC = 300 A 10 4 10 4 ns ns t tdoff t 10 3 10 3 tdoff tdon tr tr tdon tf 10 2 10 1 0 100 200 300 400 500 A IC tf 10 2 10 1 0 700 5 10 15 20 25 30 40 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C E = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 3.3 par.: VCE = 600V, VGE = 15 V, IC = 300 A 140 140 Eon mWs mWs Eon E E 100 100 80 80 Eoff Eoff 60 60 40 40 20 20 0 0 100 200 300 400 500 A IC 700 0 0 5 10 15 20 25 30 40 RG 7 Oct-27-1997 BSM300GA120DN2E3166 Forward characteristics of fast recovery Transient thermal impedance Zth JC = (tp) parameter: D = tp / T reverse diode IF = f(VF) parameter: Tj Diode 10 0 600 Tj=125C A Tj=25C K/W 500 IF ZthJC 450 10 -1 400 350 10 -2 300 D = 0.50 250 0.20 200 0.10 10 -3 150 0.05 single pulse 0.02 100 0.01 50 0 0.0 0.5 1.0 1.5 2.0 V 3.0 VF 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Oct-27-1997 BSM300GA120DN2E3166 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g 9 Oct-27-1997 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM300GA120DN2 Anhang C-Serie Appendix C-series Gehause spezifische Werte Housing specific values Modulinduktivitat stray inductance module typ. LsCE 20 nH Gehausemae C-Serie Package outline C-series Appendix C-series Appendix_C-Serie_BSM300GA120DN2.xls 2001-09-20 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via "www.eupec.com / sales & contact". Warning Due to technical requirements the products may contain dangerous substances. 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