2N5060 THRU 2N5064 SILICON CONTROLLED RECTIFIER 0.8 AMP, 30 THRU 200 VOLTS TO-92 CASE MAXIMUM RATINGS: (Tc=25C unless otherwise noted) Central Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5060 series types are epoxy molded Silicon Controlled Rectifiers designed for control systems and sens- ing circuit applications. MARKING CODE: FULL PART NUMBER SYMBOL 2N5060 2N5061 2N5062 2N5063 2N5064 UNIT Peak Repetitive Off-State Voltage Vopr, YRRM 30 60 100 150 200 Vv RMS On-State Current (To=60C) (RMS) 0.8 A Peak One Cycle Surge ITsm 10 A Peak Forward Gate Current (tp=20us) Iom 1.0 A Peak Reverse Gate Voltage Vom 5.0 V Peak Gate Power Dissipation Pom 2.0 W Average Gate Power Dissipation (t=20yus) Pg (ay) 0.1 Ww Storage Temperature Tstg -40 to +150 oc Junction Temperature Ty -40 to +125 C ELECTRICAL CHARACTERISTICS: (Tc=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM, IRRM Rated Vprm, VRRM, ReK=1KQ 1.0 pA IDRM, IRRM Rated Vprw: VRRM: Tc=125C, RgK=1Kea 50 yA IGT Vp=7.0V, R, =100Q, ReK=1K2 200 yA IGT Vp=7.0V, RL=1002, RgK=1KQ, To=-65C 350 yA ly ReK=1KQ 5.0 mA ly RGK=1KQ, Tc=-65C 10 mA VGT Vp=7.0V, R,_=1002 0.8 Vv VoT Vp=7.0V, RL =1002, Te=-65C te Vv VGT Vp=7.0V, R_=1009, To=125C 0.1 V VtM IrM=1.2A it Vv dv/dt Vp=0.67V x VprM, Te=125C, RgK=1K2 30 Vis tq Vp=0.67V x VpRM, To=125C, RGK=1K2 200 us R4 (25-August 2004) 28 T ce ntra 2N5060 THRU 2N5064 Semiconductor Corp. SILICON CONTROLLED RECTIFIER 0.8 AMP, 30 THRU 200 VOLTS TO-92 CASE - MECHANICAL OUTLINE |~ A +| = B 4 (123 R1 LEAD CODE: 1) CATHODE 2) GATE 3) ANODE MARKING CODE: FULL PART NUMBER TO-92 (REV: R1) R4 (25-August 2004) 29