SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. 1$$308 Small Package SC-59 MOD - Low Forward Voltage : VF=0.92V(Typ.) Fast Reverse Recovery Time : trr=l.6ns(Typ.) Small Total Capacitance CT=2.2pF(Typ.) oo o MAXIMUM RATINGS (Ta=25C) aan a i ll 3 CHARACTERISTIC SYMBOL RATING UNIT t Maximum(Peak) Reverse Voltage VRM 85 V | Q Reverse Voltage VR 80 V Maximum(Peak) Forward Current IFM 300* mA 1 Chepee 5 1. CATHODE * 2c4 2. ANODE Average Forward Current lo 100 mA 3 cheba 4 3. CATHODE Surge Current (10ms) IFSmM 2* A 4. CATHODE . . : 5. CATHODE Power Dissipation P 200 my , : JEDEC _ Junction Temperature Tj 125 c ELAS _ Storage Temperature Tstg ~55-125 C TOSHIBA 1-3HIA * Unit Rating. Total Rating=Unit Rating 1.5 Weight 0. 016g ELECTRICAL CHARACTERISTICS (ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.| MAX.| UNIT VF(1) If=lmA - 0.61 - Forward Voltage VF(2) Ip=LOmA - 0.74 - V VF(3) Ip=100mA - 0.92 11.20 I Vp=30V - - O.1 Reverse Current RD) R uA IR(2) | VR=80v - - 0.5 Total Capacitance Cr Vp=0, f=1MHz - 2.2 4.0 pF Reverse Recovery Time trr Ip=10mA, Fig.1 - 1.6 4.0 ns Marking A B Al HG 1163 1$S308 Ip Ve 10 = < E a E S ty faa} b a z a a = B 5 a a g id ze a 2 foe) 02 O44 06 O8 +10 12 FORWARD VOLTAGE Vp (V) Crp - Vea 2 e m S & e = oO a 8 2 Z u dt Z 3 2 g e mc a be & g 2 fa 2 B 03 1 3 10 100 ee REVERSE VOLTAGE Vy CV) Fig. 1 REVERSE RECOVERY TIME (tyr) TEST CIRCUIT INPUT WAVEFORM INPUT 0.01@F DUT 0 OUTPUT g a OSCILOSCOPE -6V g 3 CRyy= 500) w 50ns E PULSE GENERATOR ( Rour= 502) 1164 107) 10? 108 3 Qow o f OL 0.3 20 In VR 40 60 8 REVERSE VOLTAGE Vp (V) tr, ~ Ip 1 3 FORWARD CURRENT 10 30 100 Ip (mA) QUTPUT WAVEFORM [p= l0mA 0 >) IR O1 Ip