BCX51...BCX53
Jul-23-20011
PNP Silicon AF Transistors
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCX54...BCX56 (NPN)
21
3
VPS05162
2
Type Marking Pin Configuration Package
BCX51
BCX51-10
BCX51-16
BCX52
BCX52-10
BCX52-16
BCX53
BCX53-10
BCX53-16
AA
AC
AD
AE
AG
AM
AH
AK
AL
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = C
2 = C
2 = C
2 = C
2 = C
2 = C
2 = C
2 = C
2 = C
3 = E
3 = E
3 = E
3 = E
3 = E
3 = E
3 = E
3 = E
3 = E
SOT89
SOT89
SOT89
SOT89
SOT89
SOT89
SOT89
SOT89
SOT89
BCX51...BCX53
Jul-23-20012
Maximum Ratings
Parameter Symbol BCX51 BCX52 BCX53 Unit
Collector-emitter voltage VCEO 45 60 80 V
Collector-base voltage VCBO 45 60 100
Emitter-base voltage VEBO 5 5 5
DC collector current IC1 A
1.5Peak collector current ICM
Base current IBmA100
IBM 200Peak base current W
Ptot
Total power dissipation, TS = 130 °C 1
Junction temperature 150 °C
Tj
Tst
g
-65 ... 150Storage temperature
Thermal Resistance
Junction - soldering point1) RthJS
20 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BCX51...BCX53
Jul-23-20013
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BXP51
BXP52
BXP53
V(BR)CEO
45
60
80
-
-
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IB = 0
BXP51
BXP52
BXP53
V(BR)CBO
45
60
100
-
-
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 V(BR)EBO 5 - -
Collector cutoff current
VCB = 30 V, IE = 0 ICBO - - 100 nA
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C ICBO - - 20 µA
DC current gain 1)
IC = 5 mA, VCE = 2 V hFE 25 - - -
DC current gain 1)
IC = 150 mA, VCE = 2 V
BCX51...53
hFE-grp.10
hFE-grp.16
hFE
40
63
100
-
100
160
250
160
250
DC current gain 1)
IC = 500 mA, VCE = 2 V hFE 25 - -
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA VCEsat - - 0.5 V
Base-emitter voltage 1)
IC = 500 mA, VCE = 2 V VBE(ON) - - 1
AC Characteristics -MHz
fT-Transition frequency
IC = 50 mA, VCE = 10 V, f = 20 MHz 125
1) Pulse test: t ≤=300µs, D = 2%
BCX51...BCX53
Jul-23-20014
Collector current IC = f (VBE)
VCE = 2V
10 0 0.6
BCX 51...53 EHP00437
V
BE
10
mA
10
10
10
4
3
2
1
0
5
5
5
V
0.2 0.4 0.8 1.0 1.2
100
25
-50
C
Ι
˚C
˚C
˚C
Total power dissipation Ptot = f(TS)
0 20 40 60 80 100 120 °C 150
TS
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
W
1.2
Ptot
Transition frequency fT = f (IC)
VCE = 10V
10 10 10 10
BCX 51...53 EHP00439
f
mA
MHz
0123
5
T
3
10
10
2
1
10
5
5
5
C
Ι
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00438BCX 51...53
-6
0
10
5
D
=
5
101
5
102
3
10
10-5 10-4 10-3 10-2 100
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tp
=
DT
tp
T
totmax
tot
PDC
P
p
t
BCX51...BCX53
Jul-23-20015
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
0 0.4 0.8
BCX 51...53 EHP00441
V
CE sat
V
mA
104
1
10
10
102
10
103
10
Ι
C
5
5
5
1000.2 0.6
100
25
-50
˚C
˚C
˚C
DC current gain hFE = f (IC)
VCE = 2V
10 10 10 10
BCX 51...53 EHP00440
h
mA
0134
FE
3
10
102
0
10
5
5
101
2
10
5
100
25
-50
555
C
Ι
˚C
˚C
˚C
Collector cutoff current ICBO = f (TA)
VCB = 30V
10 0 50 100 150
BCX 51...53 EHP00442
TA
5
10
10
nA
10
Ι
CB0
5
5
5
10
10
4
3
2
1
0
-1
max
typ
˚C
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
10 0 0.6
BCX 51...53 EHP00443
V
BE sat
10
mA
10
10
10
4
3
2
1
0
5
5
5
V
0.2 0.4 0.8 1.0 1.2
100
25
-50
C
Ι
˚C
˚C
˚C
