SYMBOLS & CODES EXPLAINED j p 7 e 4 . { i a i ( i . . [A G n LINE TYPE [DEVICE Vp. BVdss (BVgss _| \ass Igss@ ND] COMMON SOURCE/ Rds | MAX. | IN STRUC|Y200 (EO No. No. [DISS @ | | Id Ig |Vgs=0O8 we pi Vgs /Vds gfs Yos Cis FREE |MAX|-TURE | s/a jAD @25C |ld=0 |Vds | Vds>Vp!& mhos. AIR [TEMP T0200/D E w) | (vy | ty) Vv} | tA) | A A Vv MAX ee C Ser. v- Matched Type, also listed in STRUCTURE Section 13, Category 6 A typical afg D ~ Diffused @ Phototransistor, also listed in Pulsed E Epitaxial tooe bonr ae ; % High Frequency (Yes) Ge GermaniumPE 5 (i- Yes PE Planar Epitaxial PL Planar eet tg: . # Junction Type A With infinite heat sink A_y - Y, * Insulated Gate (MOS Type) T Above 28C; For additional is 9 _ Matched pair or dual information, consult manufacturer. + Not at given test conditions A Switching, other uses % Maximum Zw Chopper, Other uses + * Pulsed D Noise figure 8db or below VgglCut off} mi fT = Plastic Package A. Vogt Threshold) Vv H Hometaxial % Typical % Maximum $ Tetrode # Mini A Not given at test conditions % Insulated Gate (MNOS Type} - imimum R [_# = Mini T Rosion) # Vps * A Depletion Mode, Type A $ Depletion-Enhancement Mode, Type B x Enhancement Mode, Type C a A - BYv T- sv bso DSX A pss @ Ves = Qand Vos Vp Ves 790 Minimum Typical Pulsed ON e+ P+ , (Output Shorted) Not given at test conditions Typical Cass Cag0 g-c igs JJunction $Storage AAmbient CCase A Phototransistor Device A Tetrode Device % Composite Type BYngo ! Lo mE al ks esaleain M wa Re aay alg we TYPE No. fT - 40 # g0c * 45C $ 100c # 50 D Free Air Zz 60C y Typical Vatue 75C A- > 100C Symbols indicate temperature at which derating starts. A Q With infinite heat sink Following symbols indicate temp W Power at which derating starts: Output f- 40% (- ec % gor * 45C ~- 70C A Pulsed #- 50% $$ - 100C %_ min * 0-65C A Ambient @ 70-80 C Case # 85-100C J Junction # 110-125C S Storage 130-135C ~ 140-165C 170-200C v Over 200C D - te . $ Minimum # Pulsed or Peak a T At temperature 25C Case D- 1, # Pulsed $ Minimum aE t sraucly indicated Maximum tyt % * Ton t, # ~ ts QD ~ AtVog < Max. Veg (see mfr. spec.) FT - ttt * Tote # Icex ky A - rs * = Ton * Toft 1 cer CEO) CES @ AtTemp. 25C Case Vv Typical Value # Pulsed $ Typical tT AtTemp. > 25C # Rated max. operating frequency f # BV __ or punch-through t <b x a Gain bandwidth product (ft) Q- BV ces * Pulsed A- 1 * Maximum frequency of oscillation g BV BVsoisus) B-1 Q Figure of merit (frequency for CER $ Minimum B unity power gain) op A Minimum Z- Maximum 7 At Temp. 25C Case fon a $ Minimum ~~ "fe * ~ Available to # Pulsed selected range $ ~ Tetrode Typical narrower than # Radiation Resistant Device (Also see top of reverse side of card.) IN ORDER OF (1) MIN. DERATING FACTOR TYPE ceo |Icbo @ fae MAX.; tr EO No. MAX V SAT. -TURE | s/a |AD @25C RES. T0200/D E 57 : 700uA |4. 278m TO3 TK30560 5.0mA_ |2. : 278m TO3 2S8C521 : : : TO3 ST66t . , . oO |i, 1. . TO3 1756-0440t ; . 5. : 2 TO63 156-06 : : : : 103 STC4252 : : TO3 STC4255 SCD321 SDT7763t : : : 5.OMSA SDT7766t 4 : 5.0MSA STT2651 : : 25M STT2654 : : 25M5A 2N1675t ! ; 120M5A|500m 2SD118R : 2:0M |300m 2SD119R : : : 2.0M [300m MSB ; : : : : 500k /200m M10A : : . 500k |200m M10D : : : 500k |200m $0T1252 : 20M SDT1255 : : : : 20M SDT1258 : : : : OM SDT1261 : : : : : 2.0M SDT1264 : : : : : 2.0M 130-06 : : : 1.0MA {200m |1.6u 2N2589t g50ms | 85 Z : : : 250k8A |150m |1.5 1726-0410 |854m |150 : : : : 40M5A 1726-0805 [854m /150 : : . 40M5A 1726-1010 (854m /150 : : : 40M5A 1726-1405 {884m |180 9 : : . 40M5A 1726-1610 (854m 1150 : : : 30M5A 1743-0620t [854ms | 85 @ : . : 30M5A 1743-1020t |854ms | 85 : : 30MSA m . z . 1743-14201 |854ms | 85 ; - 30M8A m : . 1763-0415 854m |150 o . . 40M8A 1763-0615 |854m |150 : : 40MSA SYMBOLS AND CODES 107 D.A.T.A. EXPLAINED IN INTERPRETER 107