ao FO - OT CO 7 6 ee 25C D M 6235605 Oooer7eS 1 MESTEG NPN Silicon RF Broadband Transistor BFW i1G6A STEMENS AKTIENGESELLSCHAF 0-7 BI-AS BFW 16 A is an epitaxial NPN silicon planar RF transistor in TO 39 metal case (5 C 3 DIN 41873) intended for general applications up to the GHz range, e.g. for driver and output stages of channel and range antenna amplifiers up to band V, as well as for vertical amplifier output stages in broadband oscillographs. The collector is conductively connected to the case. Type Ordering code BFW 16A Q62702-F319 Wiel By, Approx. weight 1.6 g Dimensions in mm Maximum ratings Collector-base voltage Vopo 40 Vv Collector-emitter voltage (Rae & 50 Q) Voea 40 Vv Collector-emitter voltage Veco 25 Vv Emitter-base voltage Veso 2 Vv Collector current Ic 150 mA Collector peak current (f 2 1 MHz) Tom 300 mA Junction temperature Tj 200 C Storage temperature range Tstg -65 to +200 c Total power dissipation (Tage = 125C) Prot 1.5 WwW Thermal resistance Junction to ambient air Rinsa $250 K/AW Junction to case Ringe $50 K/W ee . 771 2102 C-11Tl _@5C D MM 8235605 O0O472b 3 MESIEG 25C 04726 O-T>F/-23 BFW 16A STEMENS AKTIENGESELLSCHAF Static characteristics (Tamp = 25C) Collector cutoff current (Vcpo = 20 V; Temp = 125C) Togo $20 pA Collector-emitter saturation voltage") (Ig = 100 mA) Veesat $0.75 V DC current gain Uc = 50 mA; Vce = 5 V) hee 225 - (Ig = 150 mA; Vee = 5 V) hee 225 - Dynamic characteristics (Tq) = 25C) Transition frequency (Ie = 150 mA; Vee = 16 V: f = 200 MHz) fy 1.2 GHz Reverse transfer capacitance Uc = 10 mA; Veg = 15 Vi f = 1 MHz) Chee 17 pF Collector-base capacitance (Vcso =15V;f=1 MHz) CcBo $4 pF Power gain (Ig = 70 mA; Vee = 18 V; f = 200 MHz; Rg = 60.9) Gre 16 dB (Ig = 70 mA; Veg = 18 V; f = 800 MHz; Rg = 60.2) Goo 6.5 dB Noise figure (Ig = 30 mA; Veg = 15 V; f = 200 MHz; R, = 75 Q) NF <6 dB Output voltage Vo 600 mV Ue = 70 mA; Vee = 18 V; RAL = Ry = 76 Q; dim = 6O dB) S$ parameter Operating point: Ig = 70 mA, Vee = 18 V; Z) = 50Q f Si ? | So | ? | S12 9 So2 ? | Gmax (GHz) (dB) 0,2 0,547 |-178 |5,537 178 0,061 | 70 0,259 |- 58 | 16,7 0,3 0,540 172 |3,750 |69 0,088 | 72 0,283 |- 65 | 13,3 0,4 0,551 165 | 2,803 | 61 0,115 | 74 0,309 |- 72 | 11,0 0,5 0,568 159 {2,179 | 55 0,140 | 74 0,336 |- 81 9,0 0,6 0,583 155 |1,822 | 47 0,162 |73 0,379 |- 91] 7,7 0,7 0,585 151 1,547 |41 0,192 |71 0,441 |- 99 6,6 0,8 0,579 146 /1,356 | 35 0,219 | 71 0,505 |-103 | 5,7 0,9 0,572 141 1,181 | 30 0,248 | 69 0,556 |}-106 | 4,8 1,0 0,568 136 (1,075 | 26 0,273 | 68 0,581 |-109 | 4,1 1) Applicable to that characteristic passing through J = 110 mA, VcE = 1 V at constant Jg. 2) Measured with three tone modulation f approx. 800 MHz 772 2103 C-12 25C D MB 8235605 OOO472? S MMSIEG 25C 04727 0 7F=-3/-23 BFW 116A SIEMENS AKTIENGESELLSCHAF Total perm. power dissipation versus temperature W Prot = (70s Ath = parameter 15 Fat 10 05 0 100 200C 2104 C-13 773