SKM600GA12V
© by SEMIKRON Rev. 3 – 23.03.2011 1
SEMITRANS® 4
GA
SKM600GA12V
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Typical Applications*
•AC inverter drives
•UPS
• Electronic welders
• Switched reluctance motor
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
VCES Tj=25°C 1200 V
ICTj= 175 °C Tc=25°C 908 A
Tc=80°C 692 A
ICnom 600 A
ICRM ICRM = 3xICnom 1800 A
VGES -20 ... 20 V
tpsc
VCC = 720 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj=125°C 10 µs
Tj-40 ... 175 °C
Inverse diode
IFTj= 175 °C Tc=25°C 707 A
Tc=80°C 529 A
IFnom 600 A
IFRM IFRM = 3xIFnom 1800 A
IFSM tp= 10 ms, sin 180°, Tj=25°C 3240 A
Tj-40 ... 175 °C
Module
It(RMS) Tterminal =80°C 500 A
Tstg -40 ... 125 °C
Visol AC sinus 50Hz, t = 1 min 4000 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
VCE(sat) IC=600A
VGE =15V
chiplevel
Tj=25°C 1.75 2.18 V
Tj=150°C 2.20 2.50 V
VCE0 Tj=25°C 0.94 1.04 V
Tj=150°C 0.88 0.98 V
rCE VGE =15V Tj=25°C 1.35 1.9 m
Tj=150°C 2.20 2.53 m
VGE(th) VGE=VCE, IC= 24 mA 5.5 6 6.5 V
ICES VGE =0V
VCE = 1200 V
Tj=25°C 0.1 0.3 mA
Tj=150°C mA
Cies VCE =25V
VGE =0V
f=1MHz 36 nF
Coes f=1MHz 3.55 nF
Cres f=1MHz 3.536 nF
QGVGE = - 8 V...+ 15 V 6620 nC
RGint 1.3
td(on) VCC = 600 V
IC=600A
VGE =±15V
RG on =2.5
RG off =2.5
di/dton = 9000 A/µs
di/dtoff =6000A/µs
du/dtoff = 6400 V/
µs
Tj=150°C 710 ns
trTj=150°C 85 ns
Eon Tj=150°C 76 mJ
td(off) Tj=150°C 930 ns
tfTj=150°C 98 ns
Eoff Tj=150°C 76 mJ
Rth(j-c) per IGBT 0.049 K/W