IRFBA1404PPBF - INFINEON TECHNOLOGIES AG

IRFBA1404PPbF

HEXFET® Power MOSFET

Description

09/22/10

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Absolute Maximum Ratings

°C

VDSS = 40V

RDS(on) = 3.7mΩ

ID = 206A

Super-220

Benefits

lAdvanced Process Technology

lUltra Low On-Resistance

lIncrease Current Handling Capability

l175°C Operating Temperature

lFast Switching

lDynamic dv/dt Rating

lRepetitive Avalanche Allowed up to Tjmax

lLead-Free

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 206

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 145A

IDM Pulsed Drain Current 650

PD @TC = 25°C Power Dissipation 300 W

Linear Derating Factor 2.0 W/°C

VGS Gate-to-Source Voltage ± 20 V

EAS Single Pulse Avalanche Energy480 mJ

IAR Avalanche CurrentSee Fig.12a, 12b, 14, 15 A

EAR Repetitive Avalanche EnergymJ

dv/dt Peak Diode Recovery dv/dt 5.0 V/ns

TJOperating Junction and -40 to + 175

TSTG Storage Temperature Range -55 to + 175

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Recommended clip force 20 N

This Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest

processing techniques to achieve extremely low on-resistance per silicon area.

Additional features of this MOSFET are a 175oC junction operating tempera-

ture, fast switching speed and improved ruggedness in single and repetitive

avalanche. The Super-220 TM is a package that has been designed to have the

same mechanical outline and pinout as the industry standard TO-220 but can

house a considerably larger silicon die. The result is significantly increased

current handling capability over both the TO-220 and the much larger TO-247

package. The combination of extremely low on-resistance silicon and the

Super-220 TM package makes it ideal to reduce the component count in

multiparalled TO-220 applications, reduce system power dissipation, upgrade

existing designs or have TO-247 performance in a TO-220 outline.

These benefits make this design an extremely efficient and reliable device for

use in a wide variety of applications.

Typical Applications

Industrial Motor Drive

PD - 95903A

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Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.036 ––– V/°C Reference to 25°C, ID = 1mA

RDS(on) Static Drain-to-Source On-Resistance ––– ––– 3.7 mΩVGS = 10V, ID = 95A 

VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA

gfs Forward Transconductance 106 ––– ––– S VDS = 25V, ID = 60A

––– ––– 20 µA VDS = 40V, VGS = 0V

––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V

Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V

QgTotal Gate Charge ––– 160 200 ID = 95A

Qgs Gate-to-Source Charge ––– 35 ––– nC VDS = 32V

Qgd Gate-to-Drain ("Miller") Charge ––– 42 60 VGS = 10V

td(on) Turn-On Delay Time ––– 17 ––– VDD = 20V

trRise Time ––– 140 ––– ID = 95A

td(off) Turn-Off Delay Time ––– 72 ––– RG = 2.5Ω

tfFall Time ––– 26 ––– RD = 0.21Ω 

Between lead,

––– ––– 6mm (0.25in.)

from package

and center of die contact

Ciss Input Capacitance ––– 7360 ––– VGS = 0V

Coss Output Capacitance ––– 1680 ––– VDS = 25V

Crss Reverse Transfer Capacitance ––– 240 ––– pF ƒ = 1.0MHz, See Fig. 5

Coss Output Capacitance ––– 6630 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

Coss Output Capacitance ––– 1490 ––– VGS = 0V, VDS = 32V, ƒ = 1.0MHz

Coss eff. Effective Output Capacitance ––– 1540 ––– VGS = 0V, VDS = 0V to 32V

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

LDInternal Drain Inductance

LSInternal Source Inductance ––– –––

IGSS

2.0

5.0

IDSS Drain-to-Source Leakage Current

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) ––– ––– showing the

ISM Pulsed Source Current integral reverse

(Body Diode) ––– ––– p-n junction diode.

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 95A, VGS = 0V 

trr Reverse Recovery Time ––– 71 110 ns TJ = 25°C, IF = 95A

Qrr Reverse Recovery Charge ––– 180 270 nC di/dt = 100A/µs 

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Source-Drain Ratings and Characteristics

206

650

Parameter Typ. Max. Units

RθJC Junction-to-Case ––– 0.50

RθCS Case-to-Sink, Flat, Greased Surface 0.5 ––– °C/W

RθJA Junction-to-Ambient ––– 58

Thermal Resistance

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

1000

0.1 1 10 100

20µs PULSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

100

1000

0.1 1 10 100

20µs PULSE WIDTH

T = 175 C

J°

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

100

1000

4.0 5.0 6.0 7.0 8.0 9.0

V = 25V

20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

J°

T = 175 C

J°

-60 -40 -20 020 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

10V

159A

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

1 10 100

2000

4000

6000

8000

10000

12000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

0V,

f = 1MHz

+ C

C SHORTED

iss gs gd , ds

rss gd

oss ds gd

Ciss

Coss

Crss

040 80 120 160 200 240

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

95A

V = 20V

V = 32V

100

1000

0.4 0.8 1.2 1.6 2.0 2.4

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

J°

T = 175 C

J°

100

1000

10000

1 10 100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

= 175 C

= 25 C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)I , Drain Current (A)

10us

100us

1ms

10ms

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10a. Switching Time Test Circuit

VDS

90%

10%

VGS

d(on)

d(off)

Fig 10b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

10V

VDD

25 50 75 100 125 150 175

120

180

240

T , Case Temperature ( C)

I , Drain Current (A)

LIMITED BY PACKAGE

0.001

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJC C

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

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QGS QGD

Charge

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

10 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

0.01

Ω

D.U.T

VDS

-V

DRIVER

15V

20V

Fig 12d. Typical Drain-to-Source Voltage

Vs. Avalanche Current

020 40 60 80 100

IAV , Avalanche Current ( A)

V DSav , Avalanche Voltage ( V )

25 50 75 100 125 150 175

200

400

600

800

1000

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

39A

67A

95A

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Fig 14. Typical Avalanche Current Vs.Pulsewidth

Fig 15. Maximum Avalanche Energy

Vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of Tjmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long asTjmax is

not exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 12a, 12b.

4. PD (ave) = Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. Iav = Allowable avalanche current.

7. ∆T = Allowable rise in junction temperature, not to exceed

Tjmax (assumed as 25°C in Figure 15, 16).

tav = Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

ZthJC(D, tav) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

Iav = 2DT/ [1.3·BV·Zth]

EAS (AR) = PD (ave)·tav

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

100

200

300

400

500

EAR , Avalanche Energy (mJ)

TOP Single Pulse

BOTTOM 10% Duty Cycle

ID = 95A

1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

100

1000

Avalanche Current (A)

0.05

Duty Cycle = Single Pulse

0.10

Allowed avalanche Current vs

avalanche pulsewidth, tav

assuming ∆Tj = 25°C due to

avalanche losses

0.01

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P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

=10V

Driver Gate Drive

D.U.T. I

Waveform

D.U.T. V

Waveform

Inductor Curent

D = P. W .

Period

* VGS = 5V for Logic Level Devices

Peak Diode Recovery dv/dt Test Circuit







VDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer



Fig 16. For N-Channel HEXFET® Power MOSFETs

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 Repetitive rating; pulse width limited by

max. junction temperature.

ISD ≤ 95A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

Notes:

 Starting TJ = 25°C, L = 0.11mH

RG = 25Ω, IAS = 95A.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 Coss eff. is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS . Refer to AN-1001

 Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 95A.

123

0.25 [.010] B A

0.25

3.00 [.118]

2.50 [.099]

14.50 [.570]

13.00 [.512]

4.00 [.157]

3.50 [.138]

1.30 [.051]

0.90 [.036]

2.55 [.100]

1.00 [.039]

0.70 [.028]

5.00 [.196]

4.00 [.158]

11.00 [.433]

10.00 [.394]

1.50 [.059]

0.50 [.020]

15.00 [.590]

14.00 [.552]

9.00 [

8.00 [

13.50

[

12.50

[

MOSFET IGBT

Super-220 ( TO-273AA ) Package Outline

IRFBA1404PPbF

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Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.09/2010

Super-220 not recommended for surface mount application

Super-220 (TO-273AA) Part Marking Information

TOP

EXAMPLE: THIS IS AN IRFBA22N50A WITH

ASSEMBLY LOT CODE 1789

ASSEMBLY LOT CODE

INTERNATIONAL RECTIFIER

LOGO

IRFBA22N50A

YEAR 7 = 1997

LINE C

WEEK 19

DATE CODE

PART NUMBER

ASSEMBLED ON WW 19, 1997

IN THE ASSEMBLY LINE "C"

719C

Note: "P" in assembly line position

indicates "Lead-Free"

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/