SOT-23 Plastic-Encapsulate Transistors MMBT4401LT1 TRANSISTOR (NPN } FEATURES. Power dissipation Pow : 08.3 W (Tamb=25( 1 Collector current key 2 0.6 A Collector-base voltage Vinricno : 60 VV Operating and storage junction lemperatura range Ty, Tey -85 to +1500 0T23 1. BASE 2. EMITTER 3, COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test condilians MIN MAX | LINIT Collector-base breakdown voltage Vowicoo | ce=100uA, be=0 60 Collector-ermitter breakdown vollage Yeacea | k= Ina ket 4 v Emiltter-base breakdown voltage Vieweso | le=100,A k=O 6 V Collector cut-off current lew Woe=GOV, le=0 o4 al Collector cut-off current Ice | WoE=OS WV, [n=O of BA Emitter cut-off current lems VewSV, e=0 a4 eA Hee v1 Vee=l Vv, b= 150mA 100 300 DC current gain Hee | Wore2, k= 5004, 40 Collector-emitter saturation voltage Worn G=150 mA, b=1om4 o4 V Base-emitter saturation voltage Vonman | k= 1500m4, n=15 m4, 0.95 Transition frequency fe pee 260 MHz f= 10MHz DEVICE MARKING: MMBT440LT1=2%