© Semiconductor Components Industries, LLC, 2017
August, 2018 − Rev. 2 1Publication Order Number:
NRVTS2H60ESF/D
NRVTS2H60ESF,
NRVTSM260EV2
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Features
•Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
•Fast Switching with Exceptional Temperature Stability
•Low Power Loss and Lower Operating Temperature
•Higher Efficiency for Achieving Regulatory Compliance
•Low Thermal Resistance
•High Surge Capability
•NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
•Case: Molded Epoxy
•Epoxy Meets UL 94 V−0 @ 0.125 in
•Weight: 11.7 mg (Approximately)
•Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
•MSL 1
Typical Applications
•Switching Power Supplies including Compact Adapters and Flat
Panel Display
•High Frequency and DC−DC Converters
•Freewheeling and OR−ing diodes
•Reverse Battery Protection
•Instrumentation
TRENCH SCHOTTKY
RECTIFIER
2.0 AMPERES
60 VOLTS
MARKING DIAGRAMs
2H6 = Specific Device Code
M = Date Code
G= Pb−Free Package
SOD−123FL
CASE 498
Device Package Shipping†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NRVTS2H60ESFT1G SOD−123FL
(Pb−Free) 3,000 /
Tape & Ree
l
2H6MG
G
NRVTS2H60ESFT3G SOD−123FL
(Pb−Free) 10,000 /
Tape & Ree
l
www.onsemi.com
(Note: Microdot may be in either location)
M
2H6G
12
POWERMITE
CASE 457
NRVTSM260EV2T1G Powermite
(Pb−Free) 3,000 /
Tape & Ree
l
NRVTSM260EV2T3G Powermite
(Pb−Free) 12,000 /
Tape & Ree
l
NRVTS2H60ESF, NRVTSM260EV2
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60 V
Average Rectified Forward Current
(TL = 125°C) IO2.0 A
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TL = 139°C) IFRM 4.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 50 A
Storage and Operating Junction Temperature Range (Note 1) Tstg, TJ−65 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
SOD−123FL
Thermal Resistance, Junction−to−Lead (Note 2) YJCL 24.4 °C/W
Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 85 °C/W
Thermal Resistance, Junction−to−Ambient (Note 3) RqJA 330 °C/W
POWERMITE
Thermal Resistance, Junction−to−Lead (Note 2) YJCL 8.6 °C/W
Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 80 °C/W
Thermal Resistance, Junction−to−Ambient (Note 3) RqJA 237 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 4)
(IF = 1.0 A, TJ = 25°C)
(IF = 2.0 A, TJ = 25°C)
(IF = 1.0 A, TJ = 125°C)
(IF = 2.0 A, TJ = 125°C)
VF0.55
0.65
0.47
0.58
V
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR12
3mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
NRVTS2H60ESF, NRVTSM260EV2
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics Figure 2. Maximum Instantaneous Forward
Characteristics
VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.10.90.70.50.30.1
1
10
100
1.20.80.60.2
1
10
100
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)
6040302010 50302010
Figure 5. Typical Junction Capacitance
VR, REVERSE VOLTAGE (V)
0.1
100
1000
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
C, JUNCTION CAPACITANCE (pF)
1.4
iF, INSTANTANEOUS FORWARD
CURRENT (A)
50
1.E−07
1.E−06
1.E−05
1.E−01
40
1.E−07
1.E−05
1.E−01
IR, INSTANTANEOUS REVERSE CURRENT (A)
TA = 85°C
TA = 125°C
TA = −55°C
TA = 25°C
TA = 150°C
TA = 125°C
TA = −55°C
TA = 25°C
TA = 150°C
TA = 125°C
TA = 25°C
1.E−04
TJ = 25°C
1.5 0.4 1.0
TA = 150°C
TA = 85°C
TA = 85°C
0.1 0.1
1.E−02 TA = 150°C
TA = 125°C
TA = 25°C
TA = 85°C
6
0
110
1.E−06
10
1.E−03
1.3
1.E−04
1.E−03
1.E−02
TA = 175°C
1.
6
TA = 175°C
TA = 175°CTA = 175°C
Figure 6. Current Derating
TC, CASE TEMPERATURE (°C)
100
2
4
IF(AV), AVERAGE FORWARD CURRENT (A)
RqJL = 24.4°C/W
160
0
3
1
SQUARE WAVE
DC
110 120 130 140 150 170 18
0
NRVTS2H60ESF, NRVTSM260EV2
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Forward Power Dissipation
IF(AV), AVERAGE FORWARD CURRENT (A)
310
0
2
4
8
Figure 8. Thermal Characteristics
t, PULSE TIME (s)
10001000.010.0010.00010.000010.000001
0.1
1
10
100
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
R(t) (°C/W)
2
6Square Wave
DC
IPK/IAV = 10
IPK/IAV = 5
IPK/IAV = 20
1010.1
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse
10
14
12
NRVTS2H60ESF, NRVTSM260EV2
www.onsemi.com
5
PACKAGE DIMENSIONS
SOD−123FL
CASE 498
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION
OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP.
D
E
b
AA1
L
c
POLARITY INDICATOR
OPTIONAL AS NEEDED
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.90 0.95 0.98 0.035
INCHES
A1 0.00 0.05 0.10 0.000
b0.70 0.90 1.10 0.028
c0.10 0.15 0.20 0.004
D1.50 1.65 1.80 0.059
E2.50 2.70 2.90 0.098
L0.55 0.75 0.95 0.022
0.037 0.039
0.002 0.004
0.035 0.043
0.006 0.008
0.065 0.071
0.106 0.114
0.030 0.037
NOM MAX
3.40 3.60 3.80 0.134 0.142 0.150
HE− −
0°8°0°8°
q
q
q
TOP VIEW
BOTTOM VIEW
SIDE VIEW
HE
2X
2X
END VIEW
RECOMMENDED
DIMENSIONS: MILLIMETERS
1.25
2X
4.20
1.22
2X
12
NRVTS2H60ESF, NRVTSM260EV2
www.onsemi.com
6
PACKAGE DIMENSIONS
POWERMITE
CASE 457−04
ISSUE F
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A1.75 2.05 0.069 0.081
B1.75 2.18 0.069 0.086
C0.85 1.15 0.033 0.045
D0.40 0.69 0.016 0.027
F0.70 1.00 0.028 0.039
H-0.05 +0.10 -0.002 +0.004
J0.10 0.25 0.004 0.010
K3.60 3.90 0.142 0.154
L0.50 0.80 0.020 0.031
R1.20 1.50 0.047 0.059
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS. MOLD
FLASH, PROTRUSIONS OR GATE BURRS SHALL
NOT EXCEED 0.15 (0.006) PER SIDE.
S
B
M
0.08 (0.003) C S
T
−A−
−B−
S
J
K
−T−
H
L
J
C
D
S
B
M
0.08 (0.003) C S
T
F
PIN 1
PIN 2
R
0.50 REF 0.019 REF
2.54
0.100
0.635
0.025
1.27
0.050
2.67
0.105 0.762
0.030
ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
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P
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NRVTS2H60ESF/D
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