NRVTS2H60ESF, NRVTSM260EV2 Very Low Forward Voltage Trench-based Schottky Rectifier www.onsemi.com Features * Fine Lithography Trench-based Schottky Technology for Very Low * * * * * * * Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Mechanical Characteristics: * * * * * POWERMITE CASE 457 SOD-123FL CASE 498 MARKING DIAGRAMs Case: Molded Epoxy Epoxy Meets UL 94 V-0 @ 0.125 in Weight: 11.7 mg (Approximately) Lead and Mounting Surface Temperature for Soldering Purposes: 260C Maximum for 10 Seconds MSL 1 Typical Applications * Switching Power Supplies including Compact Adapters and Flat * * * * TRENCH SCHOTTKY RECTIFIER 2.0 AMPERES 60 VOLTS Panel Display High Frequency and DC-DC Converters Freewheeling and OR-ing diodes Reverse Battery Protection Instrumentation 2H6MG G 2H6 M G 1 M 2H6G 2 = Specific Device Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping NRVTS2H60ESFT1G SOD-123FL (Pb-Free) 3,000 / Tape & Reel NRVTS2H60ESFT3G SOD-123FL (Pb-Free) 10,000 / Tape & Reel NRVTSM260EV2T1G Powermite (Pb-Free) 3,000 / Tape & Reel NRVTSM260EV2T3G Powermite (Pb-Free) 12,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2017 August, 2018 - Rev. 2 1 Publication Order Number: NRVTS2H60ESF/D NRVTS2H60ESF, NRVTSM260EV2 MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 60 V Average Rectified Forward Current (TL = 125C) IO 2.0 A Peak Repetitive Forward Current (Square Wave, 20 kHz, TL = 139C) IFRM 4.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 50 A Tstg, TJ -65 to +175 C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Storage and Operating Junction Temperature Range (Note 1) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction-to-Lead (Note 2) YJCL 24.4 C/W Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 85 C/W Thermal Resistance, Junction-to-Ambient (Note 3) RqJA 330 C/W Thermal Resistance, Junction-to-Lead (Note 2) YJCL 8.6 C/W Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 80 C/W Thermal Resistance, Junction-to-Ambient (Note 3) RqJA 237 C/W Symbol Value Unit SOD-123FL POWERMITE ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 4) (IF = 1.0 A, TJ = 25C) (IF = 2.0 A, TJ = 25C) (IF = 1.0 A, TJ = 125C) (IF = 2.0 A, TJ = 125C) VF Maximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 125C) IR V 0.55 0.65 0.47 0.58 12 3 mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board. 3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width 380 ms, Duty Cycle 2.0%. www.onsemi.com 2 NRVTS2H60ESF, NRVTSM260EV2 TYPICAL CHARACTERISTICS iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 175C TA = 150C 10 TA = 125C 1 TA = 85C TA = 25C TA = -55C 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1 TA = 85C TA = 25C 1.5 TA = -55C 0.2 0.4 0.6 1.0 0.8 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.6 1.E-01 1.E-01 1.E-02 TA = 150C 1.E-04 TA = 125C 1.E-05 TA = 85C 1.E-06 TA = 175C 1.E-02 TA = 175C 1.E-03 TA = 150C 1.E-03 TA = 125C 1.E-04 TA = 85C 1.E-05 TA = 25C 1.E-06 TA = 25C 1.E-07 1.E-07 10 20 30 50 40 60 10 20 40 30 50 60 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics 1000 C, JUNCTION CAPACITANCE (pF) TA = 150C TA = 125C IR, INSTANTANEOUS REVERSE CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (A) 0.1 TA = 175C 10 0.1 IF(AV), AVERAGE FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TJ = 25C 100 10 0.1 1 10 4 RqJL = 24.4C/W DC 3 SQUARE WAVE 2 1 0 100 110 120 130 140 150 160 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating www.onsemi.com 3 170 180 NRVTS2H60ESF, NRVTSM260EV2 TYPICAL CHARACTERISTICS 14 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IPK/IAV = 20 IPK/IAV = 10 12 10 8 6 IPK/IAV = 5 Square Wave 4 DC 2 0 0 2 1 3 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation 100 50% Duty Cycle R(t) (C/W) 20% 10 10% 5% 2% 1 0.1 1% Single Pulse 0.000001 0.00001 0.0001 0.001 0.1 0.01 t, PULSE TIME (s) Figure 8. Thermal Characteristics www.onsemi.com 4 1 10 100 1000 NRVTS2H60ESF, NRVTSM260EV2 PACKAGE DIMENSIONS SOD-123FL CASE 498 ISSUE D q E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. D 1 2 DIM A A1 b c D E L HE q A1 POLARITY INDICATOR OPTIONAL AS NEEDED A END VIEW TOP VIEW q HE MIN 0.90 0.00 0.70 0.10 1.50 2.50 0.55 3.40 0 MILLIMETERS NOM MAX 0.95 0.98 0.05 0.10 0.90 1.10 0.15 0.20 1.65 1.80 2.70 2.90 0.75 0.95 3.60 3.80 8 - SIDE VIEW 2X b INCHES NOM 0.037 0.002 0.035 0.006 0.065 0.106 0.030 0.142 - MAX 0.039 0.004 0.043 0.008 0.071 0.114 0.037 0.150 8 RECOMMENDED SOLDERING FOOTPRINT* c 2X MIN 0.035 0.000 0.028 0.004 0.059 0.098 0.022 0.134 0 L 2X 1.22 BOTTOM VIEW EEE EEE EEE EEE 4.20 EEE EEE EEE EEE 2X 1.25 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 5 NRVTS2H60ESF, NRVTSM260EV2 PACKAGE DIMENSIONS POWERMITE CASE 457-04 ISSUE F F 0.08 (0.003) C -A- J M T B S C S S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. DIM A B C D F H J K L R S PIN 1 -B- K PIN 2 R L J MILLIMETERS INCHES MIN MAX MIN MAX 1.75 2.05 0.069 0.081 1.75 2.18 0.069 0.086 0.85 1.15 0.033 0.045 0.40 0.69 0.016 0.027 0.70 1.00 0.028 0.039 -0.05 +0.10 -0.002 +0.004 0.10 0.25 0.004 0.010 3.60 3.90 0.142 0.154 0.50 0.80 0.020 0.031 1.20 1.50 0.047 0.059 0.50 REF 0.019 REF D H -T- 0.08 (0.003) M T B S C S SOLDERING FOOTPRINT* 0.635 0.025 2.67 0.105 0.762 0.030 2.54 0.100 1.27 0.050 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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