© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 5
1Publication Order Number:
NTMFS5844NL/D
NTMFS5844NL,
NVMFS5844NL
Power MOSFET
60 V, 61 A, 12 mW, Single NChannel
Features
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFS5844NLWF Wettable Flanks Product
NVMFS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
DraintoSource Voltage VDSS 60 V
GatetoSource Voltage VGS "20 V
Continuous Drain Cur-
rent RYJmb (Notes 1,
2, 3, 4) Steady
State
Tmb = 25°CID61 A
Tmb = 100°C 43
Power Dissipation
RYJmb (Notes 1, 2, 3)
Tmb = 25°CPD107 W
Tmb = 100°C 54
Continuous Drain Cur-
rent RqJA (Notes 1, 3,
4) Steady
State
TA = 25°CID11.2 A
TA = 100°C 8.0
Power Dissipation
RqJA (Notes 1 & 3)
TA = 25°CPD3.7 W
TA = 100°C 1.8
Pulsed Drain Current TA = 25°C, tp = 10 msIDM 247 A
Current Limited by Package
(Note 4)
TA = 25°C IDmaxPkg 80 A
Operating Junction and Storage Temperature TJ, Tstg 55 to
175
°C
Source Current (Body Diode) IS60 A
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 31 A, L = 0.1 mH, RG = 25 W)
EAS 48 mJ
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
JunctiontoMounting Board (top) Steady
State (Notes 2, 3)
RYJmb 1.4 °C/W
JunctiontoAmbient Steady State (Note 3) RqJA 41
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD5112 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
DFN5
(SO8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
http://onsemi.com
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
1
V(BR)DSS RDS(ON) MAX ID MAX
60 V
12 mW @ 10 V
61 A
16 mW @ 4.5 V
G (4)
S (1,2,3)
NCHANNEL MOSFET
D (5)
XXXXXX
AYWZZ
S
S
S
G
D
D
D
D
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
NTMFS5844NL, NVMFS5844NL
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA60 V
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
57 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 60 V
TJ = 25 °C 1
mA
TJ = 125°C 100
GatetoSource Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.5 2.3 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ6.2 mV/°C
DraintoSource On Resistance RDS(on) VGS = 10 V ID = 10 A 10.2 12
mW
VGS = 4.5 V ID = 10 A 13 16
Forward Transconductance gFS VDS = 5 V, ID = 10 A 27 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 25 V
1460
pF
Output Capacitance COSS 150
Reverse Transfer Capacitance CRSS 96
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 48 V; ID = 10 A 30
nC
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 48 V; ID = 10 A
15
Threshold Gate Charge QG(TH) 1.0
GatetoSource Charge QGS 4.0
GatetoDrain Charge QGD 8.0
Plateau Voltage VGP 3.0 V
Gate Resistance RG0.62 W
SWITCHING CHARACTERISTICS (Note 6)
TurnOn Delay Time td(ON)
VGS = 4.5 V, VDS = 48 V,
ID = 10 A, RG = 2.5 W
12
ns
Rise Time tr25
TurnOff Delay Time td(OFF) 20
Fall Time tf10
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 10 A
TJ = 25°C 0.79 1.2
V
TJ = 125°C 0.65
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 10 A
19
ns
Charge Time ta13
Discharge Time tb6.0
Reverse Recovery Charge QRR 15 nC
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTMFS5844NL, NVMFS5844NL
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3
TYPICAL CHARACTERISTICS
012345
Figure 1. OnRegion Characteristics
VDS, DRAINTOSOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
10 V
3.4 V
VGS = 5 V
2.8 V
4.0 V
3.8 V
3.6 V
TJ = 25°C
3.0 V
3.2 V
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
12345
VDS 10 V
TJ = 25°C
TJ = 55°C
TJ = 125°C
Figure 2. Transfer Characteristics
VGS, GATETOSOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
0.005
0.010
0.015
0.020
0.025
0.030
24681012
Figure 3. OnResistance vs. GatetoSource
Voltage
VGS, GATETOSOURCE VOLTAGE (V)
RDS(on), DRAINTOSOURCE RESISTANCE (W)
ID = 10 A
TJ = 25°C
0.008
0.010
0.012
0.014
0.016
5 10152025303540
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
ID, DRAIN CURRENT (A)
RDS(on), DRAINTOSOURCE RESISTANCE (W)
VGS = 4.5 V
TJ = 25°C
VGS = 10 V
0.5
1
1.5
2
2.5
50 25 0 25 50 75 100 125 150
Figure 5. OnResistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
RDS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED)
VGS = 10 V
ID = 10 A
100
1,000
10,000
100,000
10 20 30 40 50 60
Figure 6. DraintoSource Leakage Current
vs. Voltage
VDS, DRAINTOSOURCE VOLTAGE (V)
IDSS, LEAKAGE (nA)
TJ = 125°C
TJ = 150°C
VGS = 0 V
175
NTMFS5844NL, NVMFS5844NL
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4
TYPICAL CHARACTERISTICS
0
200
400
600
800
1000
1200
1400
1600
1800
0 102030405060
Figure 7. Capacitance Variation
DRAINTOSOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
TJ = 25°C
VGS = 0 V
Ciss
Coss
Crss 0
2
4
6
8
10
0 5 10 15 20 25 30
Figure 8. GatetoSource Voltage vs. Total
Charge
Qg, TOTAL GATE CHARGE (nC)
VGS, GATETOSOURCE VOLTAGE (V)
VDS = 48 V
ID = 10 A
TJ = 25°C
QT
Qgs
Qgd
1
10
100
1000
1 10 100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
RG, GATE RESISTANCE (W)
t, TIME (ns)
VDD = 48 V
ID = 10 A
VGS = 4.5 V
td(off)
td(on)
tf
tr
0
10
20
30
40
0.5 0.6 0.7 0.8 0.9 1.0
Figure 10. Diode Forward Voltage vs. Current
VSD, SOURCETODRAIN VOLTAGE (V)
IS, SOURCE CURRENT (A)
TJ = 25°C
VGS = 0 V
0.1
1
10
100
1000
0.1 1 10 100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAISN VOLTAGE (V)
ID, DRAIN CURRENT (A)
VGS = 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
100 ms10 ms
1 ms
dc
10 ms
0
10
20
30
40
50
25 50 75 100 125 150
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
TJ, STARTING JUNCTION TEMPERATURE (°C)
EAS, SINGLE PULSE DRAINTO
SOURCE AVALANCHE ENERGY (mJ)
175
NTMFS5844NL, NVMFS5844NL
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5
TYPICAL CHARACTERISTICS
0.01
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 13. Thermal Response
PULSE TIME (sec)
RqJA(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
0.1
Duty Cycle = 0.5
0.2
0.05
0.02
0.01
Single Pulse
DEVICE ORDERING INFORMATION
Device Marking Package Shipping
NTMFS5844NLT1G 5844NL DFN5
(PbFree)
1500 / Tape & Reel
NVMFS5844NLT1G V5844L DFN5
(PbFree)
1500 / Tape & Reel
NVMFS5844NLWFT1G 5844LW DFN5
(PbFree)
1500 / Tape & Reel
NVMFS5844NLT3G V5844L DFN5
(PbFree)
5000 / Tape & Reel
NVMFS5844NLWFT3G 5844LW DFN5
(PbFree)
5000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTMFS5844NL, NVMFS5844NL
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6
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO8FL)
CASE 488AA
ISSUE H
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
M3.00 3.40
q0 −−−
_
3.80
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A0.90 1.00
A1 0.00 −−−
b0.33 0.41
c0.23 0.28
D5.15 BSC
D1 4.70 4.90
D2 3.80 4.00
E6.15 BSC
E1 5.70 5.90
E2 3.45 3.65
e1.27 BSC
G0.51 0.61
K1.20 1.35
L0.51 0.61
L1 0.05 0.17
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 cL
DETAIL A
A1
e
3 X
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
0.20
M
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
0.475
4.530
1.530
4.560
0.495
3.200
1.330
0.965
2X
2X
3X 4X
4X
PIN 5
(EXPOSED PAD)
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTMFS5844NL/D
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Phone: 421 33 790 2910
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Phone: 81358171050
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