SPD 30N03L SIPMOS Power Transistor Features Product Summary * N channel Drain source voltage VDS * Drain-Source on-state resistance RDS(on) 0.012 Continuous drain current ID Enhancement mode * Avalanche rated 30 V 30 A * Logic Level * dv/dt rated * 175C operating temperature Type Package Ordering Code Packaging SPD30N03L P-TO252 Q67040-S4148-A2 Tape and Reel SPU30N03L P-TO251-3-1 Q67040-S4149-A2 Tube Pin 1 G Pin 2 Pin 3 D S Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TC = 25 C, limited by bond wire 30 TC = 100 C 30 Pulsed drain current Unit IDpulse 120 EAS 250 Avalanche energy, periodic limited by Tjmax EAR 12 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS 20 V Power dissipation Ptot 120 W -55... +175 C TC = 25 C Avalanche energy, single pulse mJ ID = 30 A, VDD = 25 V, RGS = 25 kV/s IS = 46 A, VDS = 24 V, di/dt = 200 A/s, Tjmax = 175 C TC = 25 C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 Data Sheet 55/175/56 1 05.99 SPD 30N03L Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.25 Thermal resistance, junction - ambient, leded RthJA - - 100 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm 2 cooling area1) - - 50 K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)DSS 30 - - Gate threshold voltage, VGS = VDS ID = 80 A VGS(th) 1.2 1.6 2 Zero gate voltage drain current I DSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, ID = 0.25 mA A VDS = 30 V, VGS = 0 V, T j = 25 C VDS = 30 V, VGS = 0 V, T j = 150 C Gate-source leakage current I GSS 0.1 1 - - 100 - 10 100 nA VGS = 20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = 4.5 V, ID = 30 A - 0.013 0.018 VGS = 10 V, ID = 30 A - 0.0076 0.012 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 SPD 30N03L Electrical Characteristics, at Tj = 25 C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. g fs 20 45 - S Ciss - 1640 2100 pF Coss - 650 820 Crss - 280 350 t d(on) - 16 24 tr - 30 45 t d(off) - 20 30 tf - 25 38 Dynamic Characteristics Transconductance VDS2*ID*RDS(on)max , ID = 30 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 15 V, V GS = 4.5 V, ID = 30 A, RG = 3.6 Rise time VDD = 15 V, V GS = 4.5 V, ID = 30 A, RG = 3.6 Turn-off delay time VDD = 15 V, V GS = 4.5 V, ID = 30 A, RG = 3.6 Fall time VDD = 15 V, V GS = 4.5 V, ID = 30 A, RG = 3.6 Data Sheet 3 05.99 SPD 30N03L Electrical Characteristics, at Tj = 25 C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. Q gs - 4 6 Q gd - 21 31.5 Qg - 54 80 V(plateau) - 3.31 - V IS - - 30 A I SM - - 120 VSD - 0.97 1.7 V t rr - 45 68 ns Q rr - 0.045 Dynamic Characteristics Gate to source charge nC VDD = 24 V, ID = 30 A Gate to drain charge VDD = 24 V, ID = 30 A Gate charge total VDD = 24 V, ID = 30 A, VGS = 0 to 10 V Gate plateau voltage VDD = 24 V, ID = 30 A Reverse Diode Inverse diode continuous forward current TC = 25 C Inverse diode direct current,pulsed TC = 25 C Inverse diode forward voltage VGS = 0 V, I F = 60 A Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/s Reverse recovery charge 0.068 C VR = 15 V, IF=l S , diF/dt = 100 A/s Data Sheet 4 05.99 SPD 30N03L Power Dissipation Drain current Ptot = f (TC) ID = f (TC ) parameter: VGS 10 V SPD30N03L SPD30N03L 130 32 W A 110 100 24 80 ID Ptot 90 20 70 16 60 50 12 40 8 30 20 4 10 0 0 20 40 60 80 0 0 100 120 140 160 C 190 20 40 60 80 100 120 140 160 C 190 TC TC Safe operating area Transient thermal impedance I D = f (V DS) ZthJC = f (tp ) parameter : D = 0 , T C = 25 C parameter : D = tp /T 10 3 SPD30N03L 10 1 SPD30N03L K/W A 10 0 Z thJC /I 100 s 10 -1 DS (o n) = ID V DS 10 D tp = 65.0s 2 R 10 -2 D = 0.50 1 ms 10 0.20 1 10 10 ms -3 0.10 0.05 0.02 single pulse DC 10 0 -1 10 10 0 10 1 10 -4 V 10 10 -5 -7 10 2 VDS Data Sheet 0.01 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 05.99 SPD 30N03L Typ. output characteristics Typ. drain-source-on-resistance I D = f (VDS) RDS(on) = f (ID) parameter: tp = 80 s parameter: V GS SPD30N03L SPD30N03L Ptot = 120W l kjih f g 0.060 VGS [V] a 2.5 e 60 b 3.0 d c 3.5 55 ID 50 d 4.0 45 e 4.5 40 f 5.0 g 5.5 h 6.0 i 6.5 j 7.0 35 30 c 25 20 k 8.0 l 10.0 b c d 0.050 RDS(on) 75 A 0.045 0.040 0.035 0.030 0.025 0.020 e 0.015 15 f 10 0.010 b 5 0.005 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.000 0 VDS g VGS [V] = b 3.0 c 3.5 k d 4.0 10 e f 4.5 5.0 g 5.5 20 30 h i 6.0 6.5 j 7.0 40 i l h j k l 8.0 10.0 A 60 ID Typ. transfer characteristics I D= f (VGS) Typ. forward transconductance parameter: tp = 80 s gfs = f(ID ); Tj = 25C VDS 2 x I D x RDS(on)max parameter: gfs 100 60 S 50 A 45 g fs ID 40 60 35 30 25 40 20 15 20 10 5 0 0 1 2 3 V 0 0 5 20 30 40 50 A 70 ID VGS Data Sheet 10 6 05.99 SPD 30N03L Gate threshold voltage Drain-source on-resistance VGS(th) = f (Tj) RDS(on) = f (Tj) parameter : VGS = V DS, ID = 80 A parameter : ID = 30 A, VGS = 4.5 V SPD30N03L 3.0 V 0.050 2.4 VGS(th) RDS(on) 0.040 0.035 0.030 2.2 2.0 1.8 1.6 0.025 1.4 98% 1.2 0.020 1.0 typ 0.015 max 0.8 0.6 typ 0.010 0.4 0.2 0.005 0.000 -60 min 0.0 -60 -20 20 60 100 140 C -20 20 60 100 140 200 C 200 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) parameter: V GS = 0 V, f = 1 MHz parameter: Tj , tp = 80 s 10 4 10 3 SPD30N03L A pF 10 2 IF C Ciss 10 3 C oss 10 1 Tj = 25 C typ Tj = 175 C typ Crss Tj = 25 C (98%) Tj = 175 C (98%) 10 2 0 5 10 15 20 25 30 V 10 0 0.0 40 VDS Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 05.99 SPD 30N03L Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = 30 A, V DD = 25 V VGS = f (QGate ) RGS = 25 parameter: ID puls = 30 A SPD30N03L 250 16 V mJ VGS EAS 12 150 10 8 100 6 0,2 VDS max 0,8 VDS max 4 50 2 0 20 40 60 80 100 120 140 C 0 0 180 Tj 10 20 30 40 50 60 nC 80 Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPD30N03L 37 V V(BR)DSS 35 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 C 200 Tj Data Sheet 8 05.99