4N29, 4N30, 4N31, 4N32, 4N33 OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT The 4N29, 4N30, 4N31, 4N32, 4N33 series of optically coupled isolators consist of an infrared light emitting diode and NPN silicon photodarlington in a space efficient dual in line plastic package. FEATURES z Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. z High Current Transfer Ratio z High Isolation Voltage (5.3kVRMS ,7.5kVPK ) z All electrical parameters 100% tested z Custom electrical selections available APPLICATIONS z Computer terminals z Industrial systems controllers z Measuring instruments z Signal transmission between systems of different potentials and impedances 6 5 4 1 2 3 DESCRIPTION ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 80mA 5V 100mW OUTPUT TRANSISTOR OPTION G OPTION SM SURFACE MOUNT 8.3 max Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Power Dissipation 30V 50V 5V 150mW POWER DISSIPATION 1.2 0.6 10.2 9.5 1.4 0.9 0.26 Total Power Dissipation 250mW (derate linearly 3.3mW/C above 25C) 10.16 ISOCOM COMPONENTS 2004 LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1UD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com 28/11/08 DB90048 ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) PARAMETER Input MIN TYP MAX UNITS Forward Voltage (VF) 1.2 Reverse Current (IR) Output Coupled Collector-emitter Breakdown (BVCEO) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) V IF = 50mA 10 A VR = 6V 100 V V V nA IC = 1mA (note 2) IC = 100A IE = 100A VCE = 10V mA mA mA 10mA IF , 10V VCE 10mA IF , 10V VCE 10mA IF , 10V VCE V V 8mA IF , 2mA IC 8mA IF , 2mA IC VRMS VPK (note 1) (note 1) VIO = 500V (note 1) 5 s 100 40 s s VCC = 10V, IC= 50mA, IF = 200mA , Pulse Width = 1ms fig.1 Collector Output Current ( IC ) (Note 2) 4N32, 4N33 50 4N29, 4N30 10 4N31 5 Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO 1.0 1.2 5300 7500 5x1010 Output Turn on Time ton Output Turn off Time 4N32, 4N33 toff 4N29, 4N30, 4N31 Note 1 Note 2 1.5 30 50 5 Collector-emitter Saturation VoltageVCE(SAT) 4N29,4N30,4N32,4N33 4N31 TEST CONDITION Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. FIGURE 1 VCC = 10V Input IF = 200mA, Pulse width = 1ms ton toff IC = 50mA tr Input 28/11/08 Output Output tf 10% 10% 90% 90% DB90048-AAS/A4 Current Transfer Ratio vs. Forward Current Collector Power Dissipation vs. Ambient Temperature Current transfer ratio CTR (%) Collector power dissipation PC (mW) 200 150 100 50 10000 5000 0 1000 800 500 100 50 VCE = 10V TA = 25C 10 0 -30 0 25 50 75 100 0.1 0.2 0.5 125 Forward Current vs. Ambient Temperature 10 20 50 100 50mA 100 TA = 25C 20 Collector current IC (mA) 80 Forward current IF (mA) 5 Collector Current vs. Collector-emitter Voltage 100 60 40 20 0 10mA 5mA 80 60 40 2mA 20 IF = 1mA 0 -30 0 25 50 75 100 125 0 Ambient temperature TA ( C ) Collector-emitter Saturation Voltage vs. Ambient Temperature 1.2 2 3 4 5 Relative Current Transfer Ratio vs. Ambient Temperature IF = 8mA IC = 2mA 1.0 1 Collector-emitter voltage VCE ( V ) Relative current transfer ratio Collector-emitter saturation voltage VCE(SAT) (V) 2 Forward current IF (mA) Ambient temperature TA ( C ) 0.8 0.6 0.4 0.2 0 1.5 IF = 10mA VCE = 10V 1.0 0.5 0 -30 0 25 50 75 Ambient temperature TA ( C ) 28/11/08 1 100 -30 0 25 50 75 Ambient temperature TA ( C ) 100 DB90048-AAS/A4