TLE4214G - Siemens Semiconductors

Application

Applications in automotive electronics require intelligent power switches activated by

logic signals, which are shorted-load protected and provide error feedback.

This IC contains two of these power switches (low-side switches). In case of inductive

loads the integrated clamp diodes clamp the discharging voltage. If a “high” signal is

applied to the enable input both switches can be activated independently of one another

with TTL signals at the control inputs (active high). The high impedance inputs should

always be connected to a fixed potential (noise immunity).

The status output (open collector) signals the following malfunctions with high potential:

●Overload,

●Open load,

●Shorted load to ground,

●Overvoltage,

●Overtemperature.

Type Ordering Code Package

TLE 4214 G Q67000-A9094 P-DSO-20-7 (SMD)

Intelligent Double Low-Side Switch 2 x 0.5 A

Bipolar IC

TLE 4214 G

P-DSO-20-7

Features

●Double low-side switch, 2 x 0.5 A

●Power limitation

●Overtemperature shutdown

●Overvoltage shutdown

●Status monitoring

●Shorted-load protection

●Integrated clamp diodes

●Temperature range – 40 to 125 °C

Semiconductor Group 294 10.96

TLE 4214 G

Semiconductor Group 295

Pin Configuration

(top view)

TLE 4214 G

Semiconductor Group 296

Pin Definitions and Functions

Pin No. Symbol Function

6, 16 GND Ground Design wiring for the max.

short-circuit current (2 x 1 A)

10 IN2 Control input 2 (TTL compatible) activates the output

transistor 2 in case of high potential

2VSSupply voltageIn case of overvoltage at this pin large

sections of the circuit are deactivated. The status

output indicates this malfunction without delay time.

7Q2Output 2 Shorted load protected, open collector

output for currents up to 0.5 A, with clamping diodes to

supply voltage.

5Q1Output 1 Shorted load protected, open collector

output for currents up to 0.5 A, with clamping diodes to

supply voltage.

9 ENA Enable input, active high

1 IN1 Control input 1 (TTL-compatible) activates output

transistor 1 in case of high potential

15 STA Status output (open collector) for both outputs;

indicates overtemperature, overload, open load and

shorted load to ground as well as overvoltage at pin 3.

It is switched to high after a defined delay time in case

of malfunction (except: overvoltage)

3, 4, 8, 11 … 14,

17…20 N. C. Not connected

TLE 4214 G

Semiconductor Group 297

Block Diagram

TLE 4214 G

Semiconductor Group 298

Circuit Description

Input Circuits

The control inputs and the enable input consist of TTL-compatible Schmitt triggers with

hysteresis. Controlled by these stages the buffer amplifiers drive the NPN power

transistors.

Switching Stages

The output stages consist of NPN power transistors with open collectors. Since the

protective circuit allocated to each stage limits the power dissipation, the outputs are

shorted-load protected to the supply voltage throughout the entire operating range.

Positive voltage peaks, which occur during the switching of inductive loads, are limited

by the integrated clamp diodes.

Monitoring and Protective Functions

During the activated status the outputs are monitored for open load, overload, and

shorted load to ground (see table below). In addition, large sections of the circuit are shut

down in case of excessive supply voltages VS. Linked via OR gate the information

regarding these malfunctions effects the status output (open collector, active high). An

internally determined delay time applied to all malfunctions but overvoltage prevents the

output of messages in case of short-term malfunctions. Furthermore, a temperature

protection circuit prevents thermal overload. If overload occurs, the outputs are

protected according to the safe operating area (SOA) mode (see diagram). If voltage

and current are outside the SOA, the outputs oscillate to reduce the power dissipation.

The switching frequency depends on the internal delay time and the external load

(inductances and capacitances). If the frequency is low, the status output may follow the

oscillation. An integrated reverse diode protects the supply voltage VS against reverse

polarities. Similarly the load circuit is protected against reverse polarities within the limits

established by the maximum ratings (no shorted load at the same time!). At supply

voltages below the operating range an undervoltage detector ensures that neither the

status nor the outputs are activated. At supply voltages below the operating range the

output stages are de-activated.

TLE 4214 G

Semiconductor Group 299

Status Output (H = Error)

Undervoltage

> 3.5 V Operating Range Overvoltage

VI = L

(passive) VI= H

(active)

Normal function L L L H

Overload L L H H

Open load L L H H

Shorted output to ground L H H H

Overtemperature L H H H

TLE 4214 G

Semiconductor Group 300

Circuit Diagram

TLE 4214 G

Semiconductor Group 301

Absolute Maximum Ratings

Tj = – 40 to 150 °C

Parameter Symbol Limit Values Unit

min. max.

Voltages

Supply voltage, t<0.2 s

Supply voltage

Input voltage

Output voltage (status output)

Output voltage (switching stages)

–

– 1.3

–13

– 0.3

+VS

Currents

Output current (switching stages)

Current with reverse polarity, t< 0.1 s

Output current positive clamp

Ground current

Output current (status output)

IGND

internally

limited

– 0.7

–

– 1.4

–

0.7

2.0

–

Junction temperature

Storage temperature Tj

Tstg

–

– 50 150

150 °C

°C

Operating Range

Supply voltage VS6 1) 25 V

Supply voltage slew rate dVS/dt – 1 1 V/µs

Output current (switching stages)

Input voltage

Output current (status output)

VI,VF

– 0.5

– 5

0.5

Ambient temperature TA– 40 125 °C

1) Lower limit = 5 V, if previously VS greater than 6 V (turn-on hysteresis)

TLE 4214 G

Semiconductor Group 302

Supply voltage while shorted load VS–15V

Thermal resistance junction to ambient Rth JA – 77 K/W

Characteristics

VS = 6 to 16 V (typ. VS = 12 V); Tj = – 40 to 150 °C (typ. Tj = 25 °C)

Parameter Symbol Limit Values Unit Test Condition

min. typ. max.

General Characteristics

Quiescent current

Supply voltage IS

–

–2

35 4

50 mA

mA VF < VFL

VI = VI > VIH,VF > VFH

Supply overvoltage

shutdown threshold VSO 30 37 42 V VL = 5 V; VO > 4.5 V

Hysteresis of supply

overvoltage shutdown

threshold

∆VSO 469 VV

= 5 V; VO > 4.5 V

Open load error

threshold voltage VQ52050mVV

= 5 V; VO > 4.5 V

Open load error

threshold current IQU 1–40mAV

= VQU

Open load error

threshold current

for both channels active

IQU ––80mAV

Q1 = VQ2 = VQU

Absolute Maximum Ratings (cont’d)

Tj = – 40 to 150 °C

Parameter Symbol Limit Values Unit

min. max.

TLE 4214 G

Semiconductor Group 303

Logic

Control inputs

H-input voltage threshold

L-input voltage threshold VIH

VIL

1.3

0.9 1.8

1.2 2.1

1.5 V

V–

–

Hysteresis of control

input voltage ∆VI0.2 0.6 1.0 V –

Enable input

H-input voltage threshold

L-input voltage threshold VFH

VFL

1.6

1.4 2.1

1.8 2.7

2.3 V

V–

–

Hysteresis of enable

input voltage ∆VF0.1 0.3 0.7 V –

H-input current

L-input current IIH

– IIL

0–

–10

10 µA

µAVI = 5 V

VI = 0.5 V

Status Output (open collector)

L-saturation voltage Vosat 0.1 0.2 0.4 V IO = 5 mA

Status delay time tdS 82032µs

1) Period from the beginning of the disturbance at one channel (exception: overvoltage) until the 50 % value of

the status switching edge is reached.

Characteristics (cont’d)

VS = 6 to 16 V (typ. VS = 12 V); Tj = – 40 to 150 °C (typ. Tj = 25 °C)

Parameter Symbol Limit Values Unit Test Condition

min. typ. max.

TLE 4214 G

Semiconductor Group 304

Switching Stages

Saturation voltage

VQSat

–

0.6

0.8

100

IQ = 0.5 A; VI > VIH;

VF > VFH

IQ = 50 mA; VI > VIH;

VF > VFH

Output current

Leakage current IQ

0.5

– 5 –

–50

µA

QSat = 0.8 V; VI > VIH

VQ= 6 V; VI < VIL

Switch-ON time

Switch-OFF time tD ON

tD OFF

0.2

0.2 0.5

5µs

µsIQ = 0.5 Asee Timing

IQ = 0.5 ADiagram

Forward voltage of

substrate diode

Forward voltage of

clamp diode

VQS

VQF

–

1.3

1.7

IQ = – 0.5 A

t< 0.1 s

IQ = 0.5 A

t< 0.1 s

Leakage current of

clamp diode –IQF ––5 µAV

= 0 V; VI < VIL

Characteristics (cont’d)

VS = 6 to 16 V (typ. VS = 12 V); Tj = – 40 to 150 °C (typ. Tj = 25 °C)

Parameter Symbol Limit Values Unit Test Condition

min. typ. max.

TLE 4214 G

Semiconductor Group 305

Test Circuit

Timing Diagram

TLE 4214 G

Semiconductor Group 306

Application Circuit

Semiconductor Group 307

TLE 4214 G

Quiescent Current IS versus Ambient

Temperature TA in the OFF-Status

VS = 12 V; VF < VFL

Output Voltage VQversus

Output Current VS= 12 V; VI > VIH

Shorted Load Current IQ0

versus Output Voltage VQ

Semiconductor Group 308

TLE 4214 G

Equal current at both channels

Only one channel in operation

First channel 50 mA, second

channel IQ

TLE 4214 G

Semiconductor Group 309

Package Outlines

P-DSO-20-7

(Plastic Dual Small Outline Package)

GPSO5094

Sorts of Packing

Package outlines for tubes, trays etc. are contained in our

Data Book “Package Information”. Dimensions in mm

SMD = Surface Mounted Device