October 2005 / B
Page 1
SEMICONDUCTOR
TAK CHEONG
®
500 mW DO-34 Hermetically
Sealed Glass Fast Switching
Diodes
Absolute Ma ximum Ra ti ng s TA = 25°C unless otherwise noted
Symbol Parameter Value Units
PD Power Dissipation 500 mW
TSTG Storage Temperature Range -65 to +200 °C
TJ Operating Junction Temperature +175 °C
WIV Working Inverse Voltage 75 V
IO Average Rectified Current 150 mA
IFM Non-repetitive Peak Forward Current 450 mA
IFSURGE Peak Forward Surge Current 2 A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Fast Switching Device (TRR <4.0 nS)
DO-34 Package (JEDEC DO-204)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All external surfaces are corrosion resistant and leads are readily solderable
Cathode indicated by polarity band
Electrical Characteristics TA = 25°C unless otherwise noted Limits
Symbol Parameter Test Condition
Min Max Unit
BV Breakdown Voltage IR=100µA
IR=5µA
100
75
Volts
IR Reverse Leakage Current VR=20V
VR=75V
25
5
nA
µA
VF Forward Voltage TC1N4448M, TC1N914BM
TC1N4148M, TC1N4148M
TC1N4448M, TC1N914BM
IF=5mA
IF=10mA
IF=100mA
0.62 0.72
1.0
1.0
Volts
TRR Reverse Recovery Time IF=10mA, VR=6V
RL=100Ω
IRR=1mA
4 nS
C Capacitance VR=0V, f=1MHZ 4 pF
Cathode Anode
ELECTRICAL SYMBOL
TC1N4148M/TC1N4448M/TC1N914BM
L
DEVICE MARKING DIAGRAM
(TC1N4148M)
L : Logo
AXIAL LEAD
DO34
L xxxx
L : Logo
Device Code : TC1NxxxxM
DEVICE MARKING DIAGRAM
(TC1N4148M)
DEVICE MARKING DIAGRAM
(TC1N4448M / TC1N914BM)