AV vational Semiconductor LM3045/LM3046/LM3086 Transistor Arrays LM3045/LM3046/LM3086 General Description Features The LM3045, LM3046 and LM3086 each consist of five | Two matched pairs of transistors general purpose silicon NPN transistors on a common Vee matched +5 mV monolithic substrate. Two-of the transistors are internally Input offset current 2 pA max at Ic = 1 mA connected to form a differentially-connected pair. The tran- Five general purpose monolithic transistors sistors are well suited to a wide variety of applications inlow = Operation from DC to 120 MHz power system in the DC through VHF range. They may be = Wide operating current range used as discrete transistors in conventional circuits howev- m Low noise figure 3.2 dB typ at 1 kHz er, in addition, they provide the very significant inherent inte- Full rnilit rated circuit advantages of close electrical and thermal m rut mainary 9 temperature range (LM3045) 5SC to + 125C matching. The LM3045 is supplied in a 14-lead cavity dual- in-line package rated for operation over the full military tem- 2 . perature range. The LM3046 and LM3086 are electrically Applications identical to the LM3045 but are supplied in a 14-lead mold- . General use in all types of signal processing systems ed dual-in-line package for applications requiring only a lim- operating anywhere in the frequency range from DC to ited temperature range. VHF m@ Custom designed differential amplifiers @ Temperature compensated amplifiers Schematic and Connection Diagram Dual-In-Line and Smail Outline Packages SUBSTRATE 14 13 12 a4 lio l, I as aa a1 a2 a3 1 2 | 3 4 5 | 6 | 7 TL/H/7950-1 Top View Order Number LM3045J, LM3046M, LM3046N or LM3086N See NS Package Number J14A, M14A or N14A 5-42 me LSOLlet 009552? 6554 UU... EeAbsolute Maximum Ratings (7, = 25c) If Military/Aerospace specified devices are required, please contact the Distributors for availability and specifications. Power Dissipation: Ta = 25C Ta = 25C to 55C Ta > 58C Ta = 25C to 75C Ta > 75C Collector to Emitter Voltage, Vcro Collector to Base Voltage, Vopo Collector to Substrate Voltage, Vcig (Note 1) Emitter to Base Voltage, Vego Collector Current, Ic Operating Temperature Range Storage Temperature Range Soldering Information Dual-In-Line Package Soldering (10 Sec.) Smail Outline Package Vapor Phase (60 Seconds) Infrared (15 Seconds) LM3045 Each Transistor Total 300 750 300 Derate at 8 15 20 20 5 50 56C to + 125C 66C to + 180C 750 260C Package National Semiconductor Sales Oftice/ LM3046/LM3086 Each Total Units Transistor Package 300 750 mw 300 750 mw Derate at 6.67 mW/C mw mW/C 15 Vv 20 Vv 20 Vv 5 Vv 50 mA 40C to + 85C 65C to + 85C 260C 215C 220C See AN-450 Surface Mounting Methods and Their Effect on Product Reliability for other methods of soldering surface mount devices. Electrical Characteristics c A = 25C unless otherwise specified) Limits Limits Parameter Conditions LM3045, LM3046 LM3086 Units Min| Typ | Max | Min} Typ | Max Collector to Base Breakdown Voltage (Vigrycgo) {ic = 10uA,ip = 0 20 60 20} 60 Vv Collector to Emitter Breakdown Voltage (Vipayceo) | lc = 1 mA, ip = 0 15 24 15 24 Vv Voltegs ( Vemoo) Breakdown Io = 10 pA, Io) = 0 20 60 20 60 Vv Emitter to Base Breakdown Voltage (VigryeBo) fe 10 pA, Ip = 0 5 7 5 7 Vv Collector Cutoff Current (Icgo) Vop = 10V, le = 0 0.002} 40 0.002 | 100 nA Collector Cutoff Current (Ico) Voce = 10V, Ip = 0 0.5 5 pA Static Forward Current Transfer Voge = 3V Io = 10 mA 100 100 Ratio (Static Beta) (hee) { Ile=1ma | 40 | 100 40 | 100 Io = 10 pA 54 54 Input Offset Current for Matched Voe = 3V, Io = 1mA 03 2 A Pair Q, and Qo llor - hoal wu Base to Emitter Voltage (Vg) Voce = 3V { le =1mA 0.715 0.715 Vv le = 10mA 0.800 0.800 Magnus fy Ors Voor Yee=sie=tm | [oss | 5 mv Magnitude of Input Offset Voltage for Isolated VoE = 3V, Io = 1mMA Transistors |Vae3 Veeal, |\VBea VBesl; 0.45 5 mV lVees Veeal Temperature Coefficient of Base to VoE = 3V, Io = 1 mA Emitter Voltage ( AVBE ~1.9 -1.9 mV/C AT Collector to Emitter Saturation Voltage (VcesaT) | Ip = 1mMA, Io = 10mA 0.23 0.23 Vv Temperature Coefficient of Voce = 3V, Io = TMA Input Offset Voltage ( AVi0 14 pV/C AT Note 1: The collector of each transistor of the LM3045, LM3046, and LM3086 is isolated from the substrate by an integral diode. The substrate (terminal 13) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. mm 501124 o095Sea 740 5-43 SBOEINT/SPOEIWNT/SPOEINTwo 2 $3 | Electrical Characteristics (continued) i Parameter Conditions Min Typ Max | Units oS wn Bs = = @ | bow Frequency Noise Figure (NF) f = 1 kHz, Voce = 3V, 3.25 dB S Io = 100 pA, Rg = 1k = LOW FREQUENCY, SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS tp | Forward Current Transfer Ratio (hfe) f = 1 kHz, Vce = 3V, 110 (LM3045, LM3046) = Ic = 1mA (LM3086) 2 Short Circuit Input Impednace (hig) 3.5 kQ Open Circuit Output Impedance (Noe) 15.6 pmho Open Circuit Reverse Voltage Transfer Ratio (ha) 1.8x10-4 ADMITTANCE CHARACTERISTICS Forward Transfer Admittance (Yj._) f = 1 MHz, Vce = 3V, 31 -j15 Input Admittance (Yje) Ic = 1mA 0.9+J0.04 Output Admittance (Yo) 0.001 +j 0.03 Reverse Transfer Admittance (Yr) See Curve Gain Bandwidth Product (f7) Voce = 3V, Io = 3mMA 300 550 Emitter to Base Capacitance (Cep) Ves = 3V, le = 0 0.6 pF Collector to Base Capacitance (Cop) Vop = 3V, lo = 0 0.58 pF Collector to Substrate Capacitance (Cc) Vos = 3V, Io = 0 2.8 pF Typical Performance Characteristics Typical Collector To Base Typical Collector To Emitter Typical Static Forward Cutoff Current vs Ambient Cutoff Current vs Ambient Current-Transfer Ratio and Temperature for Each Temperature for Each Beta Ratio for Transistors Q, Transistor = Transistor and Qz, vs Emitter Current zw = = = u = Ee Vee = : : zm [eas = < oe 3 3 = OR t 3 ze 09 2 2 a 2 5 g we s 3 3 3 a8 1 1 8 0+ g ~ 8 25 50 75 100 125 a 2s 0 75 100 125 a At t 10 Ta ~ AMBIENT TEMPERATURE (C) Ta AMBIENT TEMPERATURE { C} I; - EMITTER (mA) TL/H/7950-2 Typical Static Base To Emitter Voltage Characteristic and Input Typical Input Offset Current Offset Voltage for Differential for Matched Transistor Pair Pair and Paired Isolated Q; Qe vs Collector Current Transistors vs Emitter Current * Vee = 4 z Ta* s Ta, = 25C < 3 = 7 38 & 5 Z s gs 2g 2 a 3 = 5 INPUT OFFSET 3 2 $ 5 1 4 0 01 a 1 10 Ot A 1 10 Ig - COLLECTOR (mA) Ig EMITTER (mA) TL/H/7960-3 5-44 ge 6501224 00955e4 bo?Typical Performance Characteristics (continues Vee BASE-TO-EMITTER (V) ~ 5 4 -75 -60 -25 0 Typical Base To Emitter Voltage Characteristic for Each Transistor vs Ambient Temperature 25 50 75 100 125 Ts, AMBIENT TEMPERATURE (*C} Typical Noise Figure vs Collector Current I] re) 20 WOISE FIGURE (dB) Sta ~ FORWARD TRANSFER CONDUCTANCE OA bte SUSCEPTANCE (mmbos} Vee = 3V Rs Ta = 25C i A 1 tg COLLECTGA {mA} Typical Forward Transfer : Admittance vs Frequency a Ta = 25C Vee 24V to =1mA A 1 10 f ~ FREQUENCY (MHz) 100 Typical Input Offset Voltage Characteristics for Differential Pair and Paired Isolated Transistors vs Ambient Temperature s = - 8 2 = oa 2 = 1 > 0 ~36 -50 -25 25 50 75 100 125 Ta AMBIENT TEMPERATURE (C) Typical Noise Figure vs Collector Current 30 Vee Rg = 10,0009 Ta = 26C a = w = = s = ir 2 co Zz 0 At 1 Io + COLLECTOR (mA) Typical Input Admittance vs Frequency 6 Ta Sz Vcr =3 s to = 1 mA az gg a2 St Ee E 23 a 2 a & A 1 10 { FREQUENCY (MHz) 100 NOISE FIGURE (dB} WORMALIZEG h PARAMETERS Gos ~ OUTPUT CONDUCTANCE OR Typical Noise Figure vs Collector Current 30 Voce = 3V Rg = 50082 Ta = 25C 25 20 a 1 1 i, COLLECTOR (ma) TL/H/7950-4 Typical Normalized Forward Current Transfer Ratio, Short Circuit Input Impedance, Open Circuit Output Impedance, and Open Circuit Reverse Voltage Transfer Ratio vs Collector Current 100 Ne = 420 hy = 3.5k2 he, = 1.88 x 104 = 15.6umho att Vee =3V t= 1 kHz Ta = 25C At At 1 10 Ig - COLLECTOR (mA) TLAH/7950-5 Typical Output Admittance 5 vs Frequency az Vor = 3V =1mA ~ ~ bo. SUSCEPTANCE (mmhos) w 1 10 f- FREQUENCY (MHz) TL/H/7950-6 5-45 we 6501124 0095530 345 S80EIN1/9POENT/SPOENTLM3045/LM3046/LM3086 Typical Performance Characteristics (continues) Ge REVERSE TRANSFER CONDUCTANCE OR bee SUSCEPTANCE (mnthos) A 15 -2 Typical Reverse Transfer Admittance vs Frequency Qe IS SMALL AT FREQUENCIES LESS THAN 500 MHz Ta = 25C Vee = 4V te = 1 mA 0 100 4 - FREQUENCY (MHz) f, GAIN-BANDWIDTH PRODUCT (MHz) Typical Gain-Bandwidth Product vs Collector Current 300 Vee = 700 Ta = 25C 600 $00 400 300 200 100 0 123 45 6 7 8 3 0 Ig ~ COLLECTOR (mA) TL/H/7950~7 - Mm 6501124 0095531 c&45 5-46