Absolute Maximum Ratings
Parameter Units
ID @ VGS = 0V, TC = 25°C Continuous Drain Current 28
ID @ VGS = 0V, TC = 100°C Continuous Drain Current 20
IDM Pulsed Drain Current 112
PD @ TC = 25°C Max. Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 250 mJ
IAR Avalanche Current 28 A
EAR Repetitive Avalanche Energy 12.5 mJ
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5 (typical) g
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state
resistance combined with high transconductance; superior
reverse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
°C
A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTORS
THRU-HOLE - TO-3 (TO-204AA/AE)
10/30/15
www.irf.com 1
100V, N-CHANNEL
TO-3
Product Summary
Part Number BVDSS RDS(on) ID
IRF140 100V 0.077Ω 28A
Features:
nRepetitive Avalanche Ratings
nDynamic dv/dt Rating
nHermetically Sealed
nSimple Drive Requirements
nEase of Paralleling
For footnotes refer to the last page
IRF140
PD-90369A
IRF140
2www.irf.com
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case — — 1.0
RthJA Junction to Ambient — — 30 Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — 28
ISM Pulse Source Current (Body Diode) — — 112
VSD Diode Forward Voltage — — 1.5 V Tj = 25°C, IS = 28A, VGS = 0V
trr Reverse Recovery Time — — 400 ns Tj = 25°C, IF = 28A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge — — 2.9 µC VDD ≤ 50V
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.13 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.077 VGS =10V, ID = 20A
Resistance — — 0.089 VGS =10V, ID= 28A
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 9.1 — — S VDS = 15V, IDS = 20A
IDSS Zero Gate Voltage Drain Current — — 25 VDS = 80V, VGS=0V
— — 250 VDS = 80V
VGS = 0V, TJ = 125°C
I
GSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge 30 — 59 VGS =10V, ID = 28A
Qgs Gate-to-Source Charge 2.4 — 12 nC VDS = 50V
Qgd Gate-to-Drain (‘Miller’) Charge 12 — 30.7
td(on) Turn-On Delay Time — — 21 VDD = 50V, ID = 28A,
trRise Time — — 145 VGS =10V, RG = 9.1Ω
td(off) Turn-Off Delay Time — — 55
tfFall Time — — 105
LS + LDTotal Inductance — 6.1 —
Ciss Input Capacitance — 1660 VGS = 0V, VDS = 25V
Coss Output Capacitance — 550 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 120 —
nA
nH
ns
µA
Ω
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
www.irf.com 3
IRF140
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
IRF140
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
13 a& b
www.irf.com 5
IRF140
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRF140
6www.irf.com
QG
QGS QGD
VG
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
10V
www.irf.com 7
IRF140
Footnotes:
ISD ≤ 28A, di/dt ≤ 170A/µs,
VDD ≤ 100V, TJ ≤ 150°C
Suggested RG = 9.1 Ω
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25°C,
Peak IL = 28A, L = 0.64mH, VGS = 10V Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions —TO-204AE (TO-3)
IR WORLD HEADQUARTERS: 101 N Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/2015
