DE275-501N16A
RF Power MOSFET
V
DSS = 500 V
ID25 = 16 A
RDS(on) = 0.4 Ω
ΩΩ
Ω
PDC = 590 W
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 500 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MΩ 500 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
c
= 25°C 16 A
I
DM
T
c
= 25°C, pulse width limited by T
JM
96 A
I
AR
T
c
= 25°C 16 A
E
AR
T
c
= 25°C 20 mJ
dv/dt
I
S
≤ I
DM
, di/dt ≤ 100A/µs, V
DD
≤ V
DSS
,
T
j
≤ 150°C, R
G
= 0.2Ω 5 V/ns
I
S
= 0 >200 V/ns
P
DC
590 W
P
DHS
T
c
= 25°C
Derate 1.9W/°C above 25°C 284 W
P
DAMB
T
c
= 25°C 3.0 W
R
thJC
0.25 C/W
R
thJHS
0.53 C/W
Symbol Test Conditions Characteristic Values
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 3 ma 500 V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 ma 3.5 4.0 5.5 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25°C
V
GS
= 0 T
J
= 125°C
50
1 µA
mA
R
DS(on)
V
GS
= 15 V, I
D
= 0.5I
D25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2% .38 Ω
g
fs
V
DS
= 20V, I
D
= 0.5 I
D25
pulse test 3 5 8 S
T
J
-55 +175 °C
T
JM
175 °C
T
stg
-55 +175 °C
T
L
1.6mm(0.063 in) from case for 10 s 300 °C
Weight 2 g
T
J
= 25°C unless otherwise specified
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Q
g
process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low R
DS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Advantages
• Optimized for RF and high speed
switching at frequencies to 100MHz
• Easy to mount—no insulators needed
• High power density
N-Channel Enhancement Mode
Low Q
g
and R
g
High dv/dt
Nanosecond Switching
Ideal for Class C, D, & E Applications
DRAIN
SG1 SG2
GATE
SD1 SD2
DE275-501N16A
RF Power MOSFET
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified)
min. typ. max.
R
G
0.3 Ω
C
iss
1650 pF
C
oss
V
GS
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz 122 pF
C
rss
33 pF
T
d(on)
3 ns
T
on
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 0.2 Ω (External)
2 ns
T
d(off)
4 ns
T
off
5 ns
Q
g
50 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
12 nC
Q
gd
24 nC
C
stray
Back Metal to any Pin 21 pF
Source-Drain Diode Characteristic Values
(T
J
= 25°C unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 6 A
I
SM
Repetitive; pulse width limited by T
JM
98 A
V
SD
1.5 V
T
rr
200 ns
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2%
Q
RM
I
F
= I
S
, -di/dt = 100A/µs,
V
R
= 100V
0.6 µC
I
RM
4 A
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045
For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical
note on the IXYSRF web site at;
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf
DE275-501N16A
RF Power MOSFET
V
D S
vs. Capacitance
1
10
100
1000
10000
0 200 400 600 800
V
DS
Voltage (V)
Capacitance (pF)
Typical Output Characteristics
0
10
20
30
40
50
60
0 10 20 30 40 50 60
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Currnet (A)
Typical Transfer Characteristics
VDS = 60V, PW = 4uS
0
10
20
30
40
50
60
5678910
V
GS
, Gate-to Source Voltage (V)
I
D
, Drain Current (A)
Fig. 1 Fig. 2
Fig. 3 Fig. 4
Gate-to-Source Voltage vs. Gate Charge
V
DS
= 250V, I
D
= 8A
0
2
4
6
8
10
12
14
0 20 40 60 80
Gate Charge (nC)
Gate-to-Source Voltage (V)
Top 8-10V
7.5V
7V
6.5V
6V
5.5V
Bottom 5V
C
iss
C
oss
C
rss
DE275-501N16A
RF Power MOSFET
Source
Gate Drain
Fig. 5 Package Drawing
Source
Source
Source
DE275-501N16A
RF Power MOSFET
501N16A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 6. The model is an expansion of the SPICE level
3 MOSFET model. It includes the stray inductive terms L
G
, L
S
and L
D
. Rd is the R
DS(ON)
of the device,
Rds is the resistive leakage term. The output capacitance, C
OSS
, and reverse transfer capacitance, C
RSS
are modeled with reversed biased diodes. This provides a varactor type response necessary for a high
power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff.
Figure 6 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the IXYS RF web site at
http://www.ixysrf.com/products/switch_mode.html
http://www.ixysrf.com/spice/de275-501n16a.html
Net List:
SYM=POWMOSN
.SUBCKT 501N16A 10 20 30
* TERMINALS: D G S
* 500 Volt 16 Amp .38 ohm N-Channel Power MOSFET
* REVA 6-15-00
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 .2
DON 6 2 D1
ROF 5 7 .2
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 2.0N
RD 4 1 .38
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=5.8)
.MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.7 TT=1N RS=10M)
.MODEL D2 D (IS=.5F CJO=450P BV=500 M=.4 VJ=.6 TT=10N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=500 M=.3 VJ=.3 TT=400N RS=10M)
.ENDS
5 6
7
8
4
10 DRAIN
30 SOURCE
20 GATE
Don
Dcos
D2crs
D1crs
Rds
Ron
Doff
Roff Rd
Lg
Ld
Ls
M3
2
13
An
IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: sales@ixyscolorado.com
Web: http://www.ixyscolorado.com
Doc #9200-0222 Rev 5
© 2009 IXYS RF
