JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate DIODE
BZX84C2V4-BZX84C39 ZENER DIODE
FEATURES
z Planar Die Construction
z 350mW Power Dissipation
z Zener Voltages from 2.4V - 39V
z Ultra-Small Surface Mount Package Power dissipation
Maximum Ratings @Tamb=25℃ unless otherwise specified
Characteristic Symbol Value Unit
Forward Voltage (Note 2) @ I
F = 10mA VF 0.9 V
Power Dissipation(Note 1) Pd 300 mW
Thermal Resistance, Junction to Ambient Air RθJA 417 /℃W
Operating and Storage Temperature Range Tj,TSTG -65 to +150 ℃
SOT-23
Electrical Characteristics @ Tamb= 25°C unless otherwise specified
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, period=5ms,pulse width =300us.
3. f = 1KHZ
ZenerVoltage Range (Note 2)
Maximum Zener
Impedance
(Note 3)
Maximum
Reverse
Current
VZ@IZT I
ZT Z
ZT@IZT Z
ZK@IZK I
ZK I
R V
R
Temperature
Coefficent of
Zener voltage
@ IZT=5mA
mV/°C
Type
Number
Code
Nom(V) Min(V) Max(V) (mA) (Ω) (mA) (uA) (V) Min Max
BZX84C2V4 Z11 2.4 2.20 2.60 5 100 600 1.0 50 1.0 -3.5 0
BZX84C2V7 Z12 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0
BZX84C3V0 Z13 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0
BZX84C3V3 Z14 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0
BZX84C3V6 Z15 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0
BZX84C3V9 Z16 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0
BZX84C4V3 Z17 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0
BZX84C4V7 Z1 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2
BZX84C5V1 Z2 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2
BZX84C5V6 Z3 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2.0 2.5
BZX84C6V2 Z4 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7
BZX84C6V8 Z5 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5
BZX84C7V5 Z6 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3
BZX84C8V2 Z7 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2
BZX84C9V1 Z8 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0
BZX84C10 Z9 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0
BZX84C11 Y1- 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0
BZX84C12 Y2- 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0
BZX84C13 Y3 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0
BZX84C15 Y4 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0
BZX84C16 Y5 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0
BZX84C18 Y6- 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0
BZX84C20 Y7 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0
BZX84C22 Y8 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0
BZX84C24 Y9 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0
BZX84C27 Y10 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3
BZX84C30 Y11- 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4
BZX84C33 Y12 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4
BZX84C36 Y13 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4
BZX84C39 Y14 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2
500
50
40
400
300
30
Note 1
Note 3
T =
j 25°C C2V7
C3V3
C3V
C
9
4V7
C5V6
C6V8
C8V2
C9V1
Test Current IZ
5.0mA
I , ZENER CURRENT (mA)
P , POWER DISSIPATION (mW)
Z
d
I , ZENER CURRENT (mA)
Z
20
200
10
100
0
0
0 100 200
0 1 2 3 4 5 6 78910
T , Ambient Temperature, (°C)
V , ZENER VOLTAGE (V)
A
Z
Fig. 1 Power Derating Curve
Fig. 2 Zener Breakdown Characteristics
30 1000
T =
j 25°C C10
C12
C15
C18
Tes t cu r
2m
re nt I Z
A
C22
Test
5m
current
A
IZ
C27
C33 C36
C39
V= 2V
R
V= 1V
R
T = 25°C
j
V= 1V
R
V= 2V
R
C , TOTAL CAPACITANCE (pF)
T
100
20
10
10
1 10 100
0 V , NOMINAL ZENER VOLTAGE (V)
Z
0 10 20 30 40 Fig. 4 Total Capacitance vs Nominal Zener Voltage
V , ZENER VOLTAGE (V)
Z
Fi
g
. 3 Zener Breakdown Characteristics
Typical Characteristics BZX84C2V4-BZX84C39
