ee FAIRCHILD ee SEMICONDUCTOR m FDV302P Digital FET, P-Channel General Description This P-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one P-channel FET can replace several digital transistors with different bias resistors such as the DTCx and DCDx series. a] A SOT-23 October 1997 Features m -25V, -0.12 A continuous, -0.5 A Peak. Rosiany = 13 QO @ Vag= -2.7 V R =1092 @V,,=-4.5 V. DS(ON} = Very low level gate drive requirements allowing direct operation in 3V circuits. Vise. < 1-5V. = Gate-Source Zener for ESD ruggedness. >6kKV Human Body Madel = Compact industry standard SOT-23 surface mount package. = Replace many PNP digital transistors (DTCx and DCDx) with one DMOS FET. Mark:302 G $ SOT-23 Absolute Maximum Ratings T, = 25C unless otherwise noted Symbol | Parameter FDV302P Units Voss Drain-Source Voltage -25 Vv Vase Gate-Source Voliage 8 ly Drain Current - Continuous -0.12 - Pulsed 05 Py Maximum Power Dissipation 0.35 Ww Ty Teta Operating and Storage Temperature Range -55 to 150 Cc ESD Electrostatic Discharge Rating MIL-STD-883D 6.0 kV Human Body Model (100pf/ 1500 Ohm) THERMAL CHARACTERISTICS Raa | Thermal Resistance, Junction-to-Ambient 357 CAN 1997 Fairchild Semiconductor Corporation FDV302P REV. F Hectrical Characteristics (7, = 25 C unless otherwise noted ) Symbol | Parameter | Conditions | Min | Typ | Max | Units OFF CHARACTERISTICS BV nes Drain-Source Breakdown Voltage Vag = OV, I= -250 pA -25 V ABV </AT, | Breakdown Voltage Temp. Coefficient |, =-250 LA, Referenced to 25C -20 mV /C logs Zero Gate Voliage Drain Current Vog = -20V, Vg= OV -1 pA T, =55C -10 pA lige Gate - Body Leakage Current Vag = "BV, Vag= 0 V -100 nA ON CHARACTERISTICS snow) AMV rey fAT, Gate Threshold Voltage Temp. Coefficient |, =-250 pA, Referenced to 25C 139 mV /C Vasson Gate Threshold Voltage Vos = Vas: Ip = -250 WA -0.65 1 15 Vv Proscar Static Drain-Source On-Resistance Vag = 72.7 , |, =-0.05A 10.6 13 oO Vig =-45V, 1, =-0.2A 79 10 [T, =125C 12 | 18 lyon) Onr-State Drain Current Vag =-2.7V, Vig =-5V -0.05 Ges Forward Transconductance Vag = 8 V, I= -0.2A 0.135 s DYNAMIC CHARACTERISTICS Cc... Input Capacitance Voge =-10V, Vig = OV, 11 pF Coss Output Capacitance f= 1.0 MHz 7 pF C... Reverse Transfer Capacitance 14 pF SWITCHING CHARACTERISTICS (note boron Turn - On Delay Time Vip = 6Y, I, =-0.2A, 5 12 ns t, Turn - On Rise Time Vag = 4.5 V. Ray = 50 0 8 16 ns toro Turn - Off Delay Time 9 18 ns t, Turn - Off Fall Time 5 10 ns Q, Total Gate Charge Vog= SV, 1,=-0.2A, 0.22 | 0.31 nc Q., Gate-Source Charge Vos = 48 V 0.11 nc Qa Gate-Drain Charge 0.04 nc DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS lg Maximum Continuous Drain-Source Diode Forward Current -0.2 Vep Drain-Source Diode Forward Voltage Vag = OV, L=-O2A totes -1 -1.5 V Note Pulse Test Pulse Width < 300us Duty Cycle <2 0% FDV302P REV. F Typical Electrical Characteristics -Ip DRAIN CURRENT {A} Rostony NORMALIZED DRAIN-SOURCE ON- RESISTANCE a a = 2 = on ho -lp DRAIN-SOURCE CURRENT (A} 3 a oa _ _ _ a = re * a a oO on a Veg = 50 ff 40 1 4. YY, 3.5 | Ta 3.0 _ "* -2.0 Q 1 2 3 4 Vos DRAIN-SOURCE VOLTAGE (} Figure 1. On-Region Characteristics. | ly = -0.05A Vag=-2.7V a ae 25 Q 25 50 75 yy JUNCTION TEMPERATL i008 125Ss180 REC} Figure 3. On-Resistance Variation with Temperature. 008 I Vos=-5 T= 550 f f 25C 008 Y/ 425C 004 J 002 o os 1 15 2 Ps 3 Vag GATE TO SOURCE VOLTAGE (} Figure 5. Transfer Characteristics. Rogan) NORMALIZED od hm ho Roston) .ON-RESISTANGE (OHM) -lg REVERSE DRAIN GURRENT (A} Ww o @ EF wo # w 16 2 o Ww o c a1 wo z & a Qs 0 005 o1 015 Oe -Ip DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 5 0 5 0 5 0 0 1 2 3 4 5 6 7 8 Vogg GATE TO SOURCE VOLTAGE (} Figure 4. On Resistance Variation with Gate-To- Source Voltage. os a4 Ty= 125C 25 001 0001 0 0001 O2 o4 OG OB 1 12 Ven BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDV302P REV. F Typical Electrical And Thermal Characteristics a T , = Ip =-0.2A | a 2 Vog= -BV / g 10 BE 16 a JQ > iy uw oO C4 om a2 8 o i & 2 4 wo oO 7 a QO o1 o2 o3 o4 os Qa, GATE CHARGE (n} Figure 7. Gate Charge Characteristics. SINGLE PULSE 0.02 |- Rewa= 357 CAV Ta= 25 = 08 E ot i op gon ro. ss es =a O of z = 5 005 Vas = -2.7V a 1 2 5 10 15 20 30 40 - Vos , DRAIN-SOURCE VOLTAGE tv} Figure $. Maximum Safe Operating Area. rit) NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE nh an a a CAPACITANCE (pF) 2 = 1MHz Vag -0V of 03 1 2 5 10 18 26 Vog DRAIN TG SOURCE VOLTAGE (V} Figure 8. Capacitance Characteristics. SINGLE PULSE RalA =357CAV Ta = 25C Q 0001 oot o1 1 10 SINGLE PULSE TIME (SEC) ico 6300 Figure 10. Single Pulse Maximum Power Dissipation. Raa tt) =rtt) * Aqua RogJA = 357 C/W 44 1 001 a -, Single Pulse 0 005 . Ty: Ty =P TR qa!) o 002 Duty Cycle, D=t, / ooo1 00004 o 004 oo o4 1 10 400 200 t . TIME tsec} Figure 11. Transient Thermal Response Curve. FDV302P REV. F