FDV303N - ON SEMICONDUCTOR - Datasheet.Cloud

March, 2020 − Rev. 5

1Publication Order Number:

FDV303N/D

Digital FET, N-Channel

FDV303N

General Description

These N−Channel enhancement mode field effect transistors are

produced using ON Semiconductor’s proprietary, high cell density,

DMOS technology. This very high density process is tailored to

minimize on−state resistance at low gate drive conditions. This device

is designed especially for application in battery circuits using either

one lithium or three cadmium or NMH cells. It can be used as an

inverter or for high−efficiency miniature discrete DC/DC conversion

in compact portable electronic devices like cellular phones and pagers.

This device has excellent on−state resistance even at gate drive

voltages as low as 2.5 V.

Features

•25 V, 0.68 A Continuous, 2 A Peak

♦RDS(ON) = 0.45 Ω @ VGS = 4.5 V

♦RDS(ON) = 0.6 Ω @ VGS= 2.7 V

•Very Low Level Gate Drive Requirements Allowing Direct Operation

in 3 V Circuits, VGS(th) < 1 V

•Gate−Source Zener for ESD Ruggedness, > 6 kV Human Body

Model

•Compact Industry Standard SOT−23 Surface Mount Package

•This Device is Pb−Free, Halogen Free/BFR Free and is RoHS

Compliant

* Location code can be blank or with characters

indicating manufacturing location

* Date Code orientation and overbar may vary

depending upon manufacturing location.

www.onsemi.com

See detailed ordering and shipping information on page 2 of

this data sheet.

ORDERING INFORMATION

MARKING DIAGRAM

SOT−23 (TO−236)

CASE 318−08

STYLE 21

PIN ASSIGNMENT

Aor blank = One/two character Loacation Code

303 = Specific Device Code

M = Date Code

G= Pb−Free Package

SOT−23

A303MG

(Note: Microdot may be in either location)

Drain

Gate Source

FDV303N

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MOSFET MAXIMUM RATINGS TA = 25°C unless otherwise noted

Symbol Parameter FDV303N Units

VDSS Drain−Source Voltage, Power Supply Voltage 25 V

VGSS Gate−Source Voltage, VIN 8 V

IDDrain/Output Current

− Continuous

− Pulsed

0.68

PDMaximum Power Dissipation 0.35 W

TJ, TSTG Operating and Storage Temperature Range −55 to 150 °C

ESD Electrostatic Discharge Rating MIL−STD−883D Human Body Model

(100 pf / 1500 W)6.0 kV

THERMAL CHARACTERISTICS

Symbol Parameter Ratings Units

RθJA Thermal Resistance, Junction−to−Ambient 357 °C/W

ORDERING INFORMATION

Device Package Shipping

†

FDV303N SOT−23

Case 318−08

3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

FDV303N

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ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain−Source Breakdown Voltage VGS = 0 V, ID = 250 mA25 V

ΔBVDSS/

ΔTJ

Breakdown Voltage Temp. Coefficient ID = 250 mA, Referenced to 25°C26 mV/°C

IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 1mA

TJ = 55°C10 mA

IGSS Gate − Body Leakage Current VGS = 8 V, VDS= 0 V 100 nA

ON CHARACTERISTICS (Note 1)

ΔVGS(th)/

ΔTJ

Gate Threshold Voltage Temperature

Coefficient

ID = 250 mA, Referenced to 25°C−2.6 mV/°C

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 mA0.65 0.8 1 V

RDS(ON) Static Drain−Source On−Resistance VGS = 4.5 V, ID = 0.5 A 0.33 0.45 Ω

TJ =125°C0.52 0.8

VGS = 2.7 V, ID = 0.2 A 0.44 0.6

ID(ON) On−State Drain Current VGS = 2.7 V, VDS = 5 V 0.5 A

gFS Forward Transconductance VDS = 5 V, ID= 0.5 A 1.45 S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = 10 V, VGS = 0 V, f = 1.0 MHz 50 pF

Coss Output Capacitance 28 pF

Crss Reverse Transfer Capacitance 9 pF

SWITCHING CHARACTERISTICS (Note 1)

tD(on) Turn − On Delay Time VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω3 6 ns

trTurn − On Rise Time 8.5 18 ns

tD(off) Turn − Off Delay Time 17 30 ns

tfTurn − Off Fall Time 13 25 ns

QgTotal Gate Charge VDS = 5 V, ID = 0.5 A, VGS = 4.5 V 1.64 2.3 nC

Qgs Gate−Source Charge 0.38 nC

Qgd Gate−Drain Charge 0.45 nC

DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

ISMaximum Continuous Drain−Source Diode Forward Current 0.3 A

VSD Drain−Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A (Note 1) 0.83 1.2 V

1. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.

FDV303N

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TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics Figure 2. On−Resistance Variation with

Drain Current and Gate Voltage

Figure 3. On−Resistance Variation

with Temperature

Figure 4. On Resistance Variation with

Gate−To− Source Voltage

Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage

Variation with Source Current and Temperature

0 0.5 1 1.5 2

0.3

0.6

0.9

1.2

1.5

V , DRAIN−SOURCE VOLTAGE (V)

I , DRAIN−SOURCE CURRENT (A)

3.5

2.7

2.5

2.0

1.5

V = 4.5 V

3.0

RDS(on), NORMALIZED

0 0.2 0.4 0.6 0.8 1 1.2

0.5

1.5

I , DRAIN CURRENT (A)

DRAIN−SOURCE ON−RESISTANCE

V = 2.0 V

2.7

3.0

4.5

3.5

2.5

−50 −25 0 25 50 75 100 125 150

0.6

0.8

1.2

1.4

1.6

TJ, JUNCTION TEMPERATURE (°C)

DRAIN−SOURCE ON−RESISTANCE

V = 4.5 V

I =0.5 A

R , NORMALIZED

DS(ON)

0 0.5 1 1.5 2 2.5

0.2

0.4

0.6

0.8

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

25°C

125°C

V = 5.0 V

TJ = −55°C

011.2

0.0001

0.001

0.01

0.1

V , BODY DIODE FORWARD VOLTAGE (V)

I , REVERSE DRAIN CURRENT (A)

TJ = 125°C

25°C

−55°C

V = 0 V

1 1.5 2 2.5 3 3.5 4 4.5 5

0.4

0.8

1.2

1.6

V , GATE TO SOURCE VOLTAGE (V)

ID= 0.5A

R , ON−RESISTANCE

DS(on)

125°C

25°C

(W)

0.2 0.4 0.6 0.8

I =0.5 A

FDV303N

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TYPICAL CHARACTERISTICS TJ = 25°C Unless Otherwise Noted (continued)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics

Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power

Dissipation

Figure 11. Transient Thermal Response Curve

0 0.4 0.8 1.2 1.6 2

Q , GATE CHARGE (nC)

V , GATE−SOURCE VOLTAGE (V)

I = 0.5 A

10 V

15 V

V = 5 V

0.1 0.2 0.5 1 2 5 10 20 40

0.01

0.03

0.1

0.3

V , DRAI N−SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

V = 4.5 V

SINGLE PULSE

R = 357°C/W

T = 25°C

θJA

0.001 0.01 0.1 1 10 100300

SINGLE PULSE TIME (s)

POWER (W)

SINGLE PULSE

R = 357° C/W

T = 25°C

θJA

0.0001 0.001 0.01 0.1 1 10 100 300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

Duty Cycle, D = t /t

1 2

R (t)= r(t) * R

R = 357°C/W

θJA

T − T = P * R (t)

θJA

P(pk)

t1 t 2

r(t), NORMALIZED EFFECTIVE

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

0.1 0.5 1 2 5 10 25

100

150

V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

Ciss

f = 1 MHz

V = 0 V

Coss

Crss

SOT−23 (TO−236)

CASE 318−08

ISSUE AS

DATE 30 JAN 2018

SCALE 4:1

XXXMG

XXX = Specific Device Code

M = Date Code

G= Pb−Free Package

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present.

GENERIC

MARKING DIAGRAM*

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.

MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF

THE BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

SOLDERING FOOTPRINT

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.000

b0.37 0.44 0.50 0.015

c0.08 0.14 0.20 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.30 0.43 0.55 0.012

0.039 0.044

0.002 0.004

0.017 0.020

0.006 0.008

0.114 0.120

0.051 0.055

0.075 0.080

0.017 0.022

NOM MAX

STYLE 22:

PIN 1. RETURN

2. OUTPUT

3. INPUT

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

STYLE 7:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

STYLE 8:

PIN 1. ANODE

2. NO CONNECTION

3. CATHODE

STYLE 9:

PIN 1. ANODE

2. ANODE

3. CATHODE

STYLE 10:

PIN 1. DRAIN

2. SOURCE

3. GATE

STYLE 11:

PIN 1. ANODE

2. CATHODE

3. CATHODE−ANODE

STYLE 12:

PIN 1. CATHODE

2. CATHODE

3. ANODE

STYLE 13:

PIN 1. SOURCE

2. DRAIN

3. GATE

STYLE 14:

PIN 1. CATHODE

2. GATE

3. ANODE

STYLE 15:

PIN 1. GATE

2. CATHODE

3. ANODE

STYLE 16:

PIN 1. ANODE

2. CATHODE

3. CATHODE

STYLE 17:

PIN 1. NO CONNECTION

2. ANODE

3. CATHODE

STYLE 18:

PIN 1. NO CONNECTION

2. CATHODE

3. ANODE

STYLE 19:

PIN 1. CATHODE

2. ANODE

3. CATHODE−ANODE

STYLE 23:

PIN 1. ANODE

2. ANODE

3. CATHODE

STYLE 20:

PIN 1. CATHODE

2. ANODE

3. GATE

STYLE 21:

PIN 1. GATE

2. SOURCE

3. DRAIN

STYLE 1 THRU 5:

CANCELLED

STYLE 24:

PIN 1. GATE

2. DRAIN

3. SOURCE

STYLE 25:

PIN 1. ANODE

2. CATHODE

3. GATE

STYLE 26:

PIN 1. CATHODE

2. ANODE

3. NO CONNECTION

STYLE 27:

PIN 1. CATHODE

2. CATHODE

3. CATHODE

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.027

0−−− 10 0 −−− 10

T°°°°

TOP VIEW

SIDE VIEW

END VIEW

2.90

0.80

DIMENSIONS: MILLIMETERS

0.90

PITCH

3X 0.95

RECOMMENDED

STYLE 28:

PIN 1. ANODE

2. ANODE

3. ANODE

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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SOT−23 (TO−236)

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