Digital FET, N-Channel FDV303N General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 V. www.onsemi.com SOT-23 (TO-236) CASE 318-08 STYLE 21 Features * 25 V, 0.68 A Continuous, 2 A Peak RDS(ON) = 0.45 @ VGS = 4.5 V RDS(ON) = 0.6 @ VGS= 2.7 V Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits, VGS(th) < 1 V Gate-Source Zener for ESD Ruggedness, > 6 kV Human Body Model Compact Industry Standard SOT-23 Surface Mount Package This Device is Pb-Free, Halogen Free/BFR Free and is RoHS Compliant * * * * MARKING DIAGRAM Drain 3 A303MG G 2 Source 1 Gate Aor blank = One/two character Loacation Code 303 = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) * Location code can be blank or with characters indicating manufacturing location * Date Code orientation and overbar may vary depending upon manufacturing location. PIN ASSIGNMENT D S G SOT-23 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 1997 March, 2020 - Rev. 5 1 Publication Order Number: FDV303N/D FDV303N MOSFET MAXIMUM RATINGS TA = 25C unless otherwise noted Parameter Symbol FDV303N Units VDSS Drain-Source Voltage, Power Supply Voltage 25 V VGSS Gate-Source Voltage, VIN 8 V ID Drain/Output Current - Continuous - Pulsed 0.68 2 PD Maximum Power Dissipation 0.35 W -55 to 150 C 6.0 kV Ratings Units 357 C/W TJ, TSTG ESD Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100 pf / 1500 W) A THERMAL CHARACTERISTICS Symbol RJA Parameter Thermal Resistance, Junction-to-Ambient ORDERING INFORMATION Device Package Shipping FDV303N SOT-23 Case 318-08 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 FDV303N ELECTRICAL CHARACTERISTICS TJ = 25C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage BVDSS/ Breakdown Voltage Temp. Coefficient TJ 25 VGS = 0 V, ID = 250 mA ID = 250 mA, Referenced to 25C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V IGSS Gate - Body Leakage Current VGS = 8 V, VDS= 0 V V mV/C 26 1 TJ = 55C mA 10 mA 100 nA ON CHARACTERISTICS (Note 1) VGS(th)/ Gate Threshold Voltage Temperature Coefficient TJ VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance ID = 250 mA, Referenced to 25C 0.65 VDS = VGS, ID = 250 mA VGS = 4.5 V, ID = 0.5 A TJ =125C VGS = 2.7 V, ID = 0.2 A ID(ON) gFS On-State Drain Current VGS = 2.7 V, VDS = 5 V Forward Transconductance VDS = 5 V, ID= 0.5 A mV/C -2.6 0.8 1 V 0.33 0.45 0.52 0.8 0.44 0.6 0.5 A 1.45 S DYNAMIC CHARACTERISTICS VDS = 10 V, VGS = 0 V, f = 1.0 MHz Ciss Input Capacitance 50 pF Coss Output Capacitance 28 pF Crss Reverse Transfer Capacitance 9 pF SWITCHING CHARACTERISTICS (Note 1) VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 tD(on) Turn - On Delay Time 3 6 ns tr Turn - On Rise Time 8.5 18 ns tD(off) Turn - Off Delay Time 17 30 ns Turn - Off Fall Time 13 25 ns 1.64 2.3 nC tf VDS = 5 V, ID = 0.5 A, VGS = 4.5 V Qg Total Gate Charge Qgs Gate-Source Charge 0.38 nC Qgd Gate-Drain Charge 0.45 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A (Note 1) 1. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. www.onsemi.com 3 0.83 0.3 A 1.2 V FDV303N TYPICAL CHARACTERISTICS V GS = 4.5 V 2 2.5 2.0 2.7 0.9 0.6 1.5 0.3 VGS = 2.0 V 1.5 2.5 2.7 3.0 3.5 4.5 1 I RDS(on), NORMALIZED 3.0 1.2 DRAIN-SOURCE ON-RESISTANCE 3.5 D, DRAIN-SOURCE CURRENT (A) 1.5 0 0 0.5 1 1.5 0.5 2 0 0.2 0.4 Figure 1. On-Region Characteristics 1 IID= A 0.5A D =0.5 R DS(on), ON-RESISTANCE (W) V GS = 4.5 V 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 1.6 1.2 0.8 125C 25C 0.4 0 150 1 1.5 2 TJ, JUNCTION TEMPERATURE (C) 1 0.8 0.4 0.2 1 4 4.5 5 25C 0.6 0.5 3.5 Figure 4. On Resistance Variation with Gate-To- Source Voltage 125C 0 3 1 TJ = -55C V DS = 5.0 V 2.5 VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature 0 1.2 2 I D =0.5 A I S , REVERSE DRAIN CURRENT (A) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.8 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.6 I D , DRAIN CURRENT (A) 0.6 I D , DRAIN CURRENT (A) V DS, DRAIN-SOURCE VOLTAGE (V) 1.5 2 VGS = 0 V 25C -55C 0.01 0.001 0.0001 2.5 T J = 125C 0.1 V GS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Transfer Characteristics www.onsemi.com 4 FDV303N TYPICAL CHARACTERISTICS TJ = 25C Unless Otherwise Noted (continued) 5 100 10 V 4 15 V CAPACITANCE (pF) V GS , GATE-SOURCE VOLTAGE (V) 150 VDS = 5 V I D = 0.5 A 3 2 1 0 Coss 20 f = 1 MHz 10 0 0.4 0.8 1.2 1.6 C iss 50 V GS = 0 V 5 0.1 2 C rss 0.5 Q g , GATE CHARGE (nC) 1 2 5 10 25 V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics 5 5 3 POWER (W) I D , DRAIN CURRENT (A) SINGLE PULSE R JA = 357 C/W T A = 25C 4 1 0.3 0.1 V GS = 4.5 V SINGLE PULSE RJA = 357C/W TA = 25C 0.03 0.01 0.1 0.2 0.5 3 2 1 1 2 5 10 20 0 0.001 40 0.01 V DS , DRAI N-SOURCE VOLTAGE (V) 0.1 1 10 300 100 SINGLE PULSE TIME (s) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 0.01 0.005 R JA (t)= r(t) * R JA R JA = 357C/W P(pk) 0.01 t1 Single Pulse 0.002 0.001 0.0001 t2 TJ - TA = P * R JA (t) Duty Cycle, D = t 1 /t2 0.001 0.01 0.1 1 t 1, TIME (sec) Figure 11. Transient Thermal Response Curve www.onsemi.com 5 10 100 300 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0 INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 --- MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10 GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb-Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE-ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE-ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT-23 (TO-236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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