DE275-501N16A
RF Power MOSFET
VDSS = 500 V
ID25 = 16 A
RDS(on) = 0.4 Ω
PDC = 590 W
Symbol Test Conditions Maximum Ratings
VDSS TJ = 25°C to 150°C 500 V
VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 Tc = 25°C 16 A
IDM Tc = 25°C, pulse width limited by TJM 96 A
IAR Tc = 25°C 16 A
EAR Tc = 25°C 20 mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
5 V/ns
IS = 0 >200 V/ns
PDC 590 W
PDHS Tc = 25°C
Derate 1.9W/°C above 25°C 284 W
PDAMB Tc = 25°C 3.0 W
RthJC 0.25 C/W
RthJHS 0.53 C/W
Symbol Test Conditions Characteristic Values
TJ = 25°C unless otherwise specified
min. typ. max.
VDSS VGS = 0 V, ID = 3 ma 500 V
VGS(th) VDS = VGS, ID = 4 ma 2.5 5.5 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = 0.8 VDSS TJ = 25°C
VGS = 0 TJ = 125°C
50
1
µA
mA
RDS(on) VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
.38 Ω
gfs VDS = 15 V, ID = 0.5ID25, pulse test 10 S
TJ -55 +175 °C
TJM 175 °C
Tstg -55 +175 °C
TL 1.6mm(0.063 in) from case for 10 s 300 °C
Weight 2 g
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Qg process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Advantages
• Optimized for RF and high speed
switching at frequencies to 100MHz
• Easy to mount—no insulators needed
• High power density
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
DRAIN
SG1 SG2
GATE
SD1 SD2
DE275-501N16A
RF Power MOSFET
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
RG 0.3 Ω
Ciss 1800 pF
Coss VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz 150 pF
Crss 40 pF
Td(on) 3 ns
Ton VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 Ω (External)
2 ns
Td(off) 4 ns
Toff 5 ns
Qg(on) 50 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25 20 nC
Qgd 30 nC
Cstray Back Metal to any Pin 21 pF
Source-Drain Diode Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions min. typ. max.
IS VGS = 0 V 6 A
ISM Repetitive; pulse width limited by TJM 98 A
VSD 1.5 V
Trr
200 ns
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2%
QRM IF = IS, -di/dt = 100A/µs,
VR = 100V
0.6
µC
IRM 4 A
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045
For detailed device mounting and installation instructions, see the “DE-
Series MOSFET Mounting Instructions” technical note on IXYS RF’s web
site at www.ixysrf.com/Technical_Support/App_notes.html
DE275-501N16A
RF Power MOSFET
10
10 0
1000
10000
0 50 100 150 200 250 300 350 400 450 500
Vds in Volt s
Capacitance in pF
Ciss
Coss
Crss
275-501N16A Capacitances vs Vds
DE275-501N16A
RF Power MOSFET
501N16A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE
level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of
the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer
capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type re-
sponse necessary for a high power device model. The turn on delay and the turn off delay are
adjusted via Ron and Roff.
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at
www.directedenergy.com/spice.htm
Net List:
SYM=POWMOSN
.SUBCKT 501N16A 10 20 30
* TERMINALS: D G S
* 500 Volt 16 Amp .38 ohm N-Channel Power MOSFET
* REVA 6-15-00
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 .2
DON 6 2 D1
ROF 5 7 .2
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 2.0N
RD 4 1 .38
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=5.8)
.MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.7 TT=1N RS=10M)
.MODEL D2 D (IS=.5F CJO=450P BV=500 M=.4 VJ=.6 TT=10N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=500 M=.3 VJ=.3 TT=400N RS=10M)
.ENDS
56
7
8
4
10 DRAIN
30 SOURCE
20 GATE
Don
Dcos
D2crs
D1crs
Rds
Ron
Doff
Roff
Rd
Lg
Ld
Ls
M3
2
13
An IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: deiinfo@directedenergy.com
Web: http://www.directedenergy.com
Doc #9200-0222 Rev 3
© 2003 IXYS RF
