© 2000 IXYS All rights reserved 1 - 2
Symbol Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C70V
VDGR TJ= 25°C to 150°C; RGS = 6.8 kW70 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 165 A
IDTC= 100°C 104 A
IDM TC= 25°C, tp = 10 µs, pulse width limited by TJM 660 A
Ptot TC= 25°C, TJ = 150°C 390 W
TJ-40 ... +150 °C
TJM 150 °C
Tstg -40 ... +125 °C
VISOL 50/60 Hz t = 1 min 3000 V~
IISOL £ 1 mA t = 1 s 3600 V~
MdMounting torque(M5 or 10-32 UNF) 2.5-4.0/22-35 Nm/lb.in.
Terminal connection torque (M5) 2.5-4.0/22-35 Nm/lb.in.
Weight Typical including screws 90 g
Common-Source connected
N-Channel Enhancement Mode 4213657
Features
•Two MOSFET with common source
•International standard package
JEDEC TO-240 AA
•Direct copper bonded Al2O3 ceramic
base plate
•Isolation voltage 3000 V~
•Low RDS(on) HDMOSTM process
•Low package inductance for high
speed switching
•Kelvin source contact
•Keyed twin plugs
Applications
•Push-pull inverters
•Switched-mode and resonant-mode
power supplies
•Uninterruptible power supplies (UPS)
•AC static switches
Advantages
•Easy to mount with two screws
•Space and weight savings
•High power density
•Low losses
Dual Power
MOSFET Module
2
136745
TO-240 AA
1, 3 = Drain, 2 = Common Source
5, 6 = Gate, 4, 7 = Kelvin Source
E 72873
VDSS = 70 V
ID25 = 165 A
RDS(on) =7 mW
VMK 165-007T
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 1 mA 70 V
VGS(th) VDS = VGS, ID = 8 mA 2 4 V
IGSS VGS = ±20 V DC, VDS = 0 500 nA
IDSS VDS = VDSS,V
GS = 0 V, TJ = 25°C 200 µA
VDS = 0.8 • VDSS,V
GS = 0 V, TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 • ID25 67mW
Pulse test, t £ 300 µs, duty cycle d £ 2 %
Data per MOSFET unless otherwise stated.
Advanced Technical Information
023
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© 2000 IXYS All rights reserved 2 - 2
VMK 165-007T
TO-240 AA Outline
Dimensions in mm (1 mm = 0.0394")
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25 pulsed 60 80 S
Ciss 8.8 nF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 4.0 nF
Crss 2.4 nF
td(on) 120 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 280 ns
td(off) RG = 1 W (External), resistive load 390 ns
tf110 ns
Qg480 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 60 nC
Qgd 240 nC
RthJC 0.32 K/W
RthCH with heat transfer paste 0.2 K/W
dSCreepage distance on surface 12.7 mm
dAStrike distance through air 9.6 mm
aMax. allowable acceleration 50 m/s2
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Conditions min. typ. max.
ISVGS = 0 V 165 A
ISM Repetitive; pulse width limited by TJM 660 A
VSD IF = IS; VGS = 0 V, 1.5 V
Pulse test, t £ 300 µs, duty cycle d £ 2 %
trr IF = 50 A, -di/dt = 200 A/µs, 150 ns
VDS = 25 V, VGS = 0 V
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