SOT-23 Plastic-Encapsulate Transistors ~~. Sa N MMBT4401LT1 TRANSISTOR (NPN) 1.BASE 2.EMITTER 3.COLLECTOR BQ > 2 J | S UNIT: mm ELECTRICAL CHARACTERISTICS (Tamp=25'C unless otherwise specified) FEATURES PoWerdiasipation Pcm: 0.225 W (Tamb=25C ) Collector current lcm: 0.6A ollector-base voltage ViBR)CBO:60V Operating and storage junction temperature range Tu, Tstg :-55C to+ 150C Drain-source Breakdown Voltage V(BR)CBO ic=1001n A, le=0 60 Collector Emitter Breakdown Voltage V(BR)CEO lo=1mA,iB=0 40 V Emitter-base Breakdown Voltage V(BR)EBO le=100n A,Ic=0 6 IcBo VcB=50V,lE=0 0.1 A Collector Cut-off Current IcEO Vce=35V lb=0 04 H Emitter cut-off current lEBO VeB=5V,Ic=0 0.1 pA AFE(1) Vce=1V,Ic=150mMA 100 300 DC Current Gain hFE(2) Vce=2V,Ic=500mA 40 Collector-emitter Saturation Voltage VCEsat Ic=150mA,lB=15mA 0.4 V Bsse -emitter Voltage VBEsat Ic=150mA,|lB=15mA 0.95 Vv sa: VceE=10V,Ic=20mA Transition Frequency ft f=100MHz 250 MHz DEVICE MARKING : MMBT4401LT1:2X 201 hee, NORMALIZED CURRENT GAIN Voge, COLLECTOR-EMITTER VOLTAGE (VOLTS) Typical Characteristics MMBT4401LT1 Ty = 125C 04 02 03 05 07 1.0 20 30 '50 70 10 2030 50. 70 6100 200 300 = 8= 500 I, COLLECTOR CURRENT (mA) DC Current Gain a o oo o a 2 > o to 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 02 03 O85 OF 1.0 20 3.0 50 7.0 10 20 (30 50 Ip, BASE CURRENT (mA) Collector Saturation Region 1.0 9.8 VBE(sat) @ Ic/lg = 10 a a 06 S* VBE (sat) @ Vce = 10 V wd = re 0.4 Oo > 02 @ Iciig = 10 0 01 02 05 10 20 50 106 20 $60 100 200 500 Ic, COLLECTOR CURRENT (mA) On Voltages 202