STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 , 10 A, DPAK, TO-220, TO-220FP, IPAK MDmeshTM II Power MOSFET Features Order codes VDSS @TJmax RDS(on) max. Pw ID STD10NM60N 1 STF10NM60N STP10NM60N 650 V < 0.55 25 W 10 A 3 3 70 W 2 1 TO-220 2 TO-220FP 70 W STU10NM60N 3 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 2 3 1 IPAK 1 DPAK Application Switching applications Figure 1. Internal schematic diagram Description $ These devices are N-channel 600 V Power MOSFET realized using the second generation of MDmeshTM technology. It applies the benefits of the multiple drain process to STMicroelectronics' well-known PowerMESHTM horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics. ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging STD10NM60N 10NM60N DPAK Tape and reel STF10NM60N 10NM60N TO-220FP Tube STP10NM60N 10NM60N TO-220 Tube STU10NM60N 10NM60N IPAK Tube November 2010 Doc ID 15764 Rev 5 1/17 www.st.com 17 Contents STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 .............................................. 9 Doc ID 15764 Rev 5 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 TO-220FP IPAK DPAK VGS Gate- source voltage 25 ID Drain current (continuous) at TC = 25 C 10 (1) ID Drain current (continuous) at TC = 100 C 5 IDM (2) PTOT dv/dt (3) Drain current (pulsed) 32 Total dissipation at TC = 25 C 70 10 V 5 (1) 32 (1) 25 Peak diode recovery voltage slope 10 A 5 A 32 A 70 W 15 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 C) 2500 V TJ Tstg Operating junction temperature Storage temperature - 55 to 150 C 1. Limited only by maximum temperature allowed. 2. Pulse width limited by safe operating area. 3. ISD 10 A, di/dt 400 A/s, VDS peak V(BR)DSS, VDD = 80% V(BR)DSS. Table 3. Thermal data Value Symbol Parameter Unit TO-220 TO-220FP IPAK DPAK Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Rthj-pcb Thermal resistance junction-pcb max TJ Table 4. Symbol Maximum lead temperature for soldering purpose 1.79 5 1.79 62.50 C/W 100 C/W 50 300 C/W C/W Avalanche characteristics Parameter Value Unit IAS Avalanche current, repetitive or notrepetitive (pulse width limited by Tj Max) 4 A EAS Single pulse avalanche energy (starting TJ=25 C, ID=IAS, VDD=50 V) 200 mJ Doc ID 15764 Rev 5 3/17 Electrical characteristics 2 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Electrical characteristics (Tcase =25 C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 600 V IDSS VDS = max rating Zero gate voltage drain current (VGS = 0) VDS = max rating, TC=125 C 1 100 A A IGSS Gate-body leakage current (VDS = 0) 100 nA 3 4 V 0.53 0.55 Min. Typ. Max. Unit VGS = 25 V; VDS=0 VGS(th) Gate threshold voltage VDS = VGS, ID = 250 A RDS(on) Static drain-source on resistance Table 6. Symbol 2 VGS = 10 V, ID = 4 A Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 540 44 1.2 - pF pF pF Equivalent capacitance time related VDS = 0 to 480 V, VGS = 0 - 110 - pF Rg Gate input resistance f=1 MHz open drain - 6 - Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 8 A, VGS = 10 V (see Figure 17) - 19 3 10 - nC nC nC Ciss Coss Crss Coss eq(1) 1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/17 Doc ID 15764 Rev 5 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Table 7. Switching times Symbol Parameter td(on) tr td(off) tf Table 8. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 300 V, ID = 4 A, RG = 4.7 , VGS = 10 V (see Figure 16) Electrical characteristics Min. Typ. - 10 12 32 15 Max Unit - ns ns ns ns Source drain diode Parameter Test conditions Source-drain current Source-drain current (pulsed) Min. Typ. Max Unit - 8 32 A A 1.3 V Forward on voltage ISD = 8 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8 A, di/dt = 100 A/s VDD= 60 V (see Figure 18) - 250 2.12 17 ns C A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8 A, di/dt = 100 A/s VDD= 60 V TJ = 150 C (see Figure 18) - 315 2.6 16.5 ns C A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 s, duty cycle 1.5% Doc ID 15764 Rev 5 5/17 Electrical characteristics STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 5. Thermal impedance for TO-220FP AM03944v1 ID (A) 1s 10 D S( on ) O Li per m at ite io d ni by n m this ax a R rea is 10s 1 100s 1ms 10ms Tj=150C Tc=25C 0.1 Sinlge pulse 0.01 0.1 Figure 4. 10 1 100 VDS(V) Safe operating area for TO-220FP AM03945v1 ID (A) ) on 10s D S( O p Li era m ti ite on d in by t m his ax a R rea is 10 1 100s 1ms 10ms Tj=150C Tc=25C 0.1 Single pulse 0.01 0.1 Figure 6. 10 1 100 VDS(V) Safe operating area for DPAK, IPAK Figure 7. AM03944v1 ID (A) 1s 10 ) on 100s D S( O Li per m at ite io d ni by n m this ax a R rea is 10s 1 1ms 10ms Tj=150C Tc=25C 0.1 Sinlge pulse 0.01 0.1 6/17 1 10 100 VDS(V) Doc ID 15764 Rev 5 Thermal impedance for DPAK, IPAK STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Figure 8. Output characteristics Figure 9. AM03947v1 ID (A) 14 VGS=10V Electrical characteristics Transfer characteristics AM03948v1 ID (A) 14 VDS=20V 6V 12 12 10 10 8 8 6 6 5V 4 4 2 2 4V 0 0 5 Figure 10. 10 15 20 30 25 0 0 VDS(V) 2 4 6 8 10 VGS(V) Normalized BVDSS vs temperature Figure 11. Static drain-source on resistance AM03955v1 BVDSS (norm) AM00891v1 RDS(on) () ID=1mA 1.07 0.56 1.05 1.03 0.52 1.01 0.48 0.99 0.97 VGS=10V 0.44 0.95 0.93 -50 -25 0 25 75 100 50 TJ(C) 0.40 0 2 4 8 6 ID(A) Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations AM03951v1 VGS (V) VGS VDD=480V 12 ID=4A 10 AM03952v1 C (pF) 1000 VDS Ciss 8 100 6 Coss 4 10 2 Crss 0 0 5 10 15 20 Qg(nC) Doc ID 15764 Rev 5 1 0.1 1 10 100 VDS(V) 7/17 Electrical characteristics Figure 14. STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Normalized gate threshold voltage Figure 15. Normalized on resistance vs vs temperature temperature VGS(th) (norm) AM03953v1 ID=250A 1.10 AM03954v1 RDS(on) (norm) 2.1 1.9 ID=4A VGS=10V 1.7 1.00 1.5 1.3 0.90 1.1 0.80 0.9 0.70 -50 -25 0.5 -50 -25 0.7 8/17 0 25 50 75 100 TJ(C) Doc ID 15764 Rev 5 0 25 50 75 100 TJ(C) STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N 3 Test circuits Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit VDD 12V 47k 1k 100nF 3.3 F 2200 RL F VGS IG=CONST VDD 100 Vi=20V=VGMAX VD RG 2200 F D.U.T. D.U.T. VG 2.7k PW 47k 1k PW AM01468v1 AM01469v1 Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100H S 3.3 F B 25 1000 F D VDD 2200 F 3.3 F VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 20. Unclamped inductive waveform AM01471v1 Figure 21. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 15764 Rev 5 10% AM01473v1 9/17 Package mechanical data 4 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/17 Doc ID 15764 Rev 5 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Table 9. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 22. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 15764 Rev 5 11/17 Package mechanical data STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N TO-252 (DPAK) mechanical data DIM. mm. min. ty p ma x . A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4. 70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G 12/17 Doc ID 15764 Rev 5 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Package mechanical data TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q Typ 4.40 0.61 1.14 0.48 15.25 Max 4.60 0.88 1.70 0.70 15.75 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.75 2.65 3.85 2.95 0015988_Rev_S Doc ID 15764 Rev 5 13/17 Package mechanical data STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N TO-251 (IPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 4.60 H 16.10 L 9.00 (L1) 0.80 9.40 1.20 L2 0.80 V1 10 o 0068771_H 14/17 Doc ID 15764 Rev 5 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N 5 Packaging mechanical data Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. inch MAX. MIN. 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 D 1.5 MIN. MAX. 330 12.992 13.2 0.504 0.520 0.059 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 MAX. A0 B1 inch MAX. 12.1 0.476 1.6 0.059 0.063 D1 1.5 E 1.65 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 R 40 W 15.7 0.075 0.082 1.574 16.3 0.618 0.641 Doc ID 15764 Rev 5 15/17 Revision history 6 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Revision history 12 Table 10. 16/17 Document revision history Date Revision Changes 10-Jun-2009 1 First release 12-Jan-2010 2 Figure 4: Safe operating area for TO-220FP has been corrected 31-Mar-2010 3 Features have been corrected 17-Sep-2010 4 Content reworked to improve readability 24-Nov-2010 5 Corrected ID value Doc ID 15764 Rev 5 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. 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