LM195, LM395
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SNOSBO4C JUNE 1999REVISED APRIL 2013
LM195/LM395 Ultra Reliable Power Transistors
Check for Samples: LM195,LM395
For low-power applications (under 100 mA), refer to
1FEATURES the LP395 Ultra Reliable Power Transistor.
2 Internal Thermal Limiting The LM195/LM395 are available in the standard TO-
Greater than 1.0A Output Current 3, Kovar TO-5, and TO-220 packages. The LM195 is
3.0 μA Typical Base Current rated for operation from 55°C to +150°C and the
500 ns Switching Time LM395 from 0°C to +125°C.
2.0V Saturation Simplified Circuit
Base Can be Driven up to 40V without Damage
Directly Interfaces with CMOS or TTL
100% Electrical Burn-in
DESCRIPTION
The LM195/LM395 are fast, monolithic power
integrated circuits with complete overload protection.
These devices, which act as high gain power
transistors, have included on the chip, current limiting,
power limiting, and thermal overload protection
making them virtually impossible to destroy from any
type of overload. In the standard TO-3 transistor
power package, the LM195 will deliver load currents
in excess of 1.0A and can switch 40V in 500 ns.
The inclusion of thermal limiting, a feature not easily
available in discrete designs, provides virtually
absolute protection against overload. Excessive
power dissipation or inadequate heat sinking causes
the thermal limiting circuitry to turn off the device
preventing excessive heating.
The LM195 offers a significant increase in reliability
as well as simplifying power circuitry. In some
applications, where protection is unusually difficult,
such as switching regulators, lamp or solenoid drivers
where normal power dissipation is low, the LM195 is
especially advantageous.
The LM195 is easy to use and only a few precautions
need be observed. Excessive collector to emitter
voltage can destroy the LM195 as with any power
transistor. When the device is used as an emitter
follower with low source impedance, it is necessary to
insert a 5.0k resistor in series with the base lead to
prevent possible emitter follower oscillations.
Although the device is usually stable as an emitter
follower, the resistor eliminates the possibility of Figure 1. 1.0 Amp Lamp Flasher
trouble without degrading performance. Finally, since
it has good high frequency response, supply
bypassing is recommended.
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 1999–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
LM195, LM395
SNOSBO4C JUNE 1999REVISED APRIL 2013
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Connection Diagram
Refer to RETS195H and RETS195K drawings of military LM195H and LM195K versions for specifications.
Figure 2. TO-3 Metal Can Package
Bottom View
See Package Number NDS0002A
Refer to RETS195H and RETS195K drawings of military LM195H and LM195K versions for specifications.
Figure 3. TO-5 Metal Can Package
Bottom View
Case is Emitter
Figure 4. TO-220 Plastic Package
Top View
See Package Number NDE0003B
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS(1)(2)
Collector to Emitter Voltage
LM195 42V
LM395 36V
Collector to Base Voltage
LM195 42V
LM395 36V
Base to Emitter Voltage (Forward)
LM195 42V
LM395 36V
Base to Emitter Voltage (Reverse) 20V
Collector Current Internally Limited
Power Dissipation Internally Limited
Operating Temperature Range
LM195 55°C to +150°C
LM395 0°C to +125°C
Storage Temperature Range 65°C to +150°C
Lead Temperature
(Soldering, 10 sec.) 260°C
(1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
PRECONDITIONING
100% Burn-In In Thermal Limit
ELECTRICAL CHARACTERISTICS
LM195 LM395
Parameter Conditions Units
Min Typ Max Min Typ Max
Collector-Emitter Operating Voltage IQICIMAX 42 36 V
(2)
Base to Emitter Breakdown Voltage 0 VCE VCEMAX 42 36 60 V
Collector Current
TO-3, TO-220 VCE 15V 1.2 2.2 1.0 2.2 A
TO-5 VCE 7.0V 1.2 1.8 1.0 1.8 A
Saturation Voltage IC1.0A, TA= 25°C 1.8 2.0 1.8 2.2 V
Base Current 0 ICIMAX 3.0 5.0 3.0 10 μA
0VCE VCEMAX
Quiescent Current (IQ) Vbe = 0 2.0 5.0 2.0 10 mA
0VCE VCEMAX
Base to Emitter Voltage IC= 1.0A, TA= +25°C 0.9 0.9 V
Switching Time VCE = 36V, RL= 36Ω,500 500 ns
TA= 25°C
(1) Unless otherwise specified, these specifications apply for 55°C Tj+150°C for the LM195 and 0°C +125°C for the LM395.
(2) Selected devices with higher breakdown available.
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ELECTRICAL CHARACTERISTICS (continued)
(1)
LM195 LM395
Parameter Conditions Units
Min Typ Max Min Typ Max
Thermal Resistance Junction to Case (3) TO-3 Package (NDS) 2.3 3.0 2.3 3.0 °C/W
TO-5 Package 12 15 12 15 °C/W
TO-220 Package (NDE) 4 6 °C/W
(3) Without a heat sink, the thermal resistance of the TO-5 package is about +150°C/W, while that of the TO-3 package is +35°C/W.
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TYPICAL PERFORMANCE CHARACTERISTICS
(for NDS and NDE Packages)
Collector Characteristics Short Circuit Current
Figure 5. Figure 6.
Bias Current Quiescent Current
Figure 7. Figure 8.
Base Emitter Voltage Base Current
Figure 9. Figure 10.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
(for NDS and NDE Packages)
Saturation Voltage Response Time
Figure 11. Figure 12.
Response Time 10V Transfer Function
Figure 13. Figure 14.
36V Transfer Function Transconductance
Figure 15. Figure 16.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
(for NDS and NDE Packages) Small Signal Frequency
Response
Figure 17.
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SCHEMATIC DIAGRAM
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SNOSBO4C JUNE 1999REVISED APRIL 2013
TYPICAL APPLICATIONS
*Solid Tantalum
Figure 18. 1.0 Amp Voltage Follower
*Protects against excessive base drive
**Needed for stability
Figure 19. Power PNP
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Figure 20. Time Delay
Figure 21. 1.0 MHz Oscillator
†Solid Tantalum
Figure 22. 1.0 Amp Negative Regulator
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†Solid Tantalum
Figure 23. 1.0 Amp Positive Voltage Regulator
Figure 24. Fast Optically Isolated Switch Figure 25. Optically Isolated Power Transistor
Figure 26. CMOS or TTL Lamp Interface Figure 27. Two Terminal Current Limiter
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*Drive Voltage 0V to 10V 42V
Figure 28. 40V Switch
Figure 29. 6.0V Shunt Regulator with Crowbar
Figure 30. Two Terminal 100 mA Current Regulator
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SNOSBO4C JUNE 1999REVISED APRIL 2013
Turn ON = 350 mV
Turn OFF = 200 mV
Figure 31. Low Level Power Switch
T = R1C
R2 = 3R1
R2 82k
Figure 32. Power One-Shot
*Need for Stability
Figure 33. Emitter Follower
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Figure 34. High Input Impedance AC Emitter Follower
*Prevents storage with fast fall time square wave drive
Figure 35. Fast Follower
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*Adjust for 50 mA quiescent current
†Solid Tantalum
Figure 36. Power Op Amp
*Sixty turns wound on Arnold Type A-083081-2 core.
**Four devices in parallel
†Solid tantalum
Figure 37. 6.0 Amp Variable Output Switching Regulator
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REVISION HISTORY
Changes from Revision B (April 2013) to Revision C Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 15
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PACKAGE OPTION ADDENDUM
www.ti.com 17-Jan-2018
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
LM395T NRND TO-220 NDE 3 45 TBD Call TI Call TI 0 to 125 LM395T
LM395T/NOPB ACTIVE TO-220 NDE 3 45 Green (RoHS
& no Sb/Br) CU SN Level-1-NA-UNLIM 0 to 125 LM395T
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
MECHANICAL DATA
NDE0003B
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