FDV303N-MR - Fairchild Semiconductor

August 1997

FDV303N

Digital FET, N-Channel

General Description Features

Absolute Maximum Ratings TA = 25oC unless other wise noted

Symbol Parameter FDV303NUnits

VDSS Drain-Source Voltage, Power Supply Voltage 25 V

VGSS Gate-Source Voltage, VIN 8V

IDDrain/Output Current - Continuous 0.68 A

- Pulsed 2

PDMaximum Power Dissipation 0.35 W

TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C

ESD Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm) 6.0 kV

THERMAL CHARACTERISTICS

RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W

FDV303N Rev.D1

25 V, 0.68 A continuous, 2 A Peak.

RDS(ON) = 0.45 Ω @ VGS = 4.5 V

RDS(ON) = 0.6 Ω @ VGS= 2.7 V.

Very low level gate drive requirements allowing direct

operation in 3V circuits. VGS(th) < 1.5V.

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

Compact industry standard SOT-23 surface mount

package.

Alternative to TN0200T and TN0201T.

These N-Channel enhancement mode field effect transistors are

produced using Fairchild's proprietary, high cell density, DMOS

technology. This very high density process is tailored to minimize

on-state resistance at low gate drive conditions. This device is

designed especially for application in battery circuits using either

one lithium or three cadmium or NMH cells. It can be used as an

inverter or for high-efficiency miniature discrete DC/DC

conversion in compact portable electronic devices like cellular

phones and pagers. This device has excellent on-state

resistance even at gate drive voltages as low as 2.5 volts.

Mark:303

SOT-23 SuperSOTTM-8 SOIC-16

SO-8 SOT-223

SuperSOTTM-6

D

GS

Electrical Characteristics (TA = 25 OC unless otherwise noted )

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 25 V

∆BVDSS/∆TJBreakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C26 mV / oC

IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 1µA

TJ = 55°C 10 µA

IGSS Gate - Body Leakage Current VGS = 8 V, VDS= 0 V 100 nA

ON CHARACTERISTICS (Note)

∆VGS(th)/∆TJGate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C-2.6 mV / oC

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA0.65 0.8 1.5 V

RDS(ON) Static Drain-Source On-Resistance VGS = 4.5 V, ID = 0.5 A 0.33 0.45 Ω

TJ =125°C 0.52 0.8

VGS = 2.7 V, ID = 0.2 A 0.44 0.6

ID(ON) On-State Drain Current VGS = 2.7 V, VDS = 5 V 0.5 A

gFS Forward Transconductance VDS = 5 V, ID= 0.5 A 1.45 S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = 10 V, VGS = 0 V,

f = 1.0 MHz 50 pF

Coss Output Capacitance 28 pF

Crss Reverse Transfer Capacitance 9 pF

SWITCHING CHARACTERISTICS (Note)

tD(on)Turn - On Delay Time VDD = 6 V, ID = 0.5 A,

VGS = 4.5 V, RGEN = 50 Ω3 6 ns

trTurn - On Rise Time 8.5 18 ns

tD(off) Turn - Off Delay Time 17 30 ns

tfTurn - Off Fall Time 13 25 ns

QgTotal Gate Charge VDS = 5 V, ID = 0.5 A,

VGS = 4.5 V 1.64 2.3 nC

Qgs Gate-Source Charge 0.38 nC

Qgd Gate-Drain Charge 0.45 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

ISMaximum Continuous Drain-Source Diode Forward Current 0.3 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A (Note)0.83 1.2 V

Note:

Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDV303N Rev.D1

00.5 11.5 2

0

0.3

0.6

0.9

1.2

1.5

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

3.5

2.7

2.5

2.0

1.5

DS

D

V = 4.5V

GS

3.0

R DS(on), NORMALIZED

00.2 0.4 0.6 0.8 11.2

0.5

1

1.5

2

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V = 2.0V

GS

2.7 3.0

4.5

D

3.5

2.5

Typical Electrical Characteristics

Figure 1. On-Region Characteristics.Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

-50 -25 025 50 75 100 125 150

0.6

0.8

1

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

J

V = 4.5 V

GS

I =0.5 A

D

R , NORMALIZED

DS(ON)

Figure 3. On-Resistance Variation

with Temperature.

00.5 11.5 22.5

0

0.2

0.4

0.6

0.8

1

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

25°C

125°C

V = 5.0V

DS

GS

D

T = -55°C

J

Figure 5. Transfer Characteristics.

00.2 0.4 0.6 0.8 11.2

0.0001

0.001

0.01

0.1

1

V , BODY DIODE FORWARD VOLTAGE (V)

I , REVERSE DRAIN CURRENT (A)

T = 125°C

J

25°C

-55°C

V = 0V

GS

SD

S

Figure 6. Body Diode Forward Voltage

Variation with Source Current and Temperature.

Figure 4. On Resistance Variation with

Gate-To- Source Voltage.

11.5 22.5 33.5 44.5 5

0

0.4

0.8

1.2

1.6

2

V , GATE TO SOURCE VOLTAGE (V)

ID= 0.5A

GS

R , ON-RESISTANCE (OHM)

DS(on)

125°C

25°C

FDV303N Rev.D1

00.4 0.8 1.2 1.6 2

0

1

2

3

4

5

Q , GATE CHARGE (nC)

V , GATE-SOURCE VOLTAGE (V)

g

GS

I = 0.5A

D10V

15V

V = 5V

DS

0.1 0.2 0.5 1 2 510 20 40

0.01

0.03

0.1

0.3

1

3

5

V , DRAI N-SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

V = 4.5V

SINGLE PULSE

R =357°C/W

T = 25°C

GS

θJA

DS

D

DC

1s

10ms

100ms

10s

RDS(ON) LIMIT

A

1ms

0.001 0.01 0.1 1 10 100 300

0

1

2

3

4

5

SINGLE PULSE TIME (SEC)

POWER (W)

SINGLE PULSE

R =357° C/W

T = 25°C

θJA

A

Figure 10. Single Pulse Maximum Power

Dissipation.

0.0001 0.001 0.01 0.1 110 100 300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

Duty Cycle, D = t /t

1 2

R (t) = r(t) * R

R = 357 °C/W

θJA

T - T = P * R (t)

θJA

A

J

P(pk)

t

1 t

2

r(t), NORMALIZED EFFECTIVE

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Figure 11. Transient Thermal Response Curve.

0.1 0.5 12 5 10 25

5

10

20

50

100

150

V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

DS

C

iss

f = 1 MHz

V = 0V

GS

C

oss

C

rss

Figure 8. Capacitance Characteristics.

Figure 7. Gate Charge Characteristics.

Figure 9. Maximum Safe Operating Area.

Typical Electrical And Thermal Characteristics