Philips Semiconductors PNP general purpose transistors Product specification BCW69; BCW70 FEATURES e Low current (max. 100 mA) Low voltage (max. 45 V}. APPLICATIONS General purpose switching and amplification. DESCRIPTION PNP transist or in a SOT23 plastic package. NPN complements: BCW71 and BCW72. PINNING PIN DESCRIPTION base 2 emitter 3 collector MARKING H Eye 1 12 TYPE NUMBER MARKING CODE Top view BCWE69 Hip BCW70 H2p QUICK REFERENCE DATA a MaANI256 Fig.1 Simplified outline (SOT23) and symbol. 2 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VeBo coilector-base voltage open emitter -50 Vv Voeo collector-amitter voltage open base ~ -45 Vv lom peak collector current ~ -200 mA Prot total power dissipation Tamb 25 C - 250 mw hee DC current gain Io = -2 MA; Voce = -5 V BCW6)9 120 260 BCW7) 215 500 fr transition frequency Io = -10 mA; Veg = 5 V; f = 100 MHz 100 - MHz 1997 Mar 06 433 Philips Semiconductors Product specification PNP general purpose transistors BCW69; BCW70 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vcso collector-base voltage open emitter - -50 Vv VcEo collector-emitter voltage open base; Ic = -2 mA - ~45 Vv VEO emitter-base voltage open collector ~ -5 Vv le collector current (DC) - ~100 mA lom peak collector current - ~200 mA lam peak base current - -200 mA Prat total power dissipation Tamb < 25 C - 250 mw Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature ~-65 +150 C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rihpa thermal resistance from junction to ambient | note 1 500 KAW Note 4. Transistor mounted on an FR4 printed-circuit board. 1997 Mar 06 434 Philips Semiconductors Product specification PNP general purpose transistors BCW69; BCW70 CHARACTERISTICS T, = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT loBo collector cut-off current le = 0; Veg = -20 V - - -100 {nA le = 0; Veg = -20 V; T; = 100 C ~ - -10 [LA lEBo emitter cut-off current lo = 0; Veg =-5 V - - -100 [nA hee DC current gain lo =-10 WA: Voce = -5 V BCW69 - 90 - BCW70 - 150 |- hee DC current gain Io = -2 MA; Voce =-5 V BCcWwe69 120 |- 260 BCW70 215 |- 500 Vecesat coltector-emitter saturation voltage | Ic =-10 mA; Ig =-0.5 mA - ~80 |-300 | mV Ic = -50 mA; Ip = -2.5 mA; note 1 - -150 | - mV Veesat base-emitter saturation voltage Ic = -10 mA; Ig =-0.5 mA ~ ~720 | mV Ic = -50 mA; Ip = -2.5 mA; note 1 ~ ~810 |- mV Vee base-emitter voltage Io =-2 MA; Voce = -5 V ~600 | - ~-750 | mV C, collector capacitance le = le = 0; Veg = -10 Vi f = 1 MHz ~ 4.5 - pF fr transition frequency Io = -10 MA; Voge =-5 Vi f= 100 MHz} 100 = | - - MHz F noise figure Io = -200 HA: Vee = -5 Vi Rg = 2 kQ; | - - 10 dB f=1 kHz, B = 200 Hz Note 1. Pulse test: tp < 300 ps; 6 < 0.02. 1997 Mar 06 435