SMF12AT1 - ON Semiconductor

 Semiconductor Components Industries, LLC, 2003

March, 2003 − Rev. 0 1Publication Order Number:

SMF5.0AT1/D

SMF5.0AT1 Series

Zener Transient

Voltage Suppressor

SOD−123 Flat Lead Package

The SMF5.0A Series is designed to protect voltage sensitive

components from high voltage, high energy transients. Excellent

clamping capability, high sur ge capability, low zener impedance and

fast response time. Because of its small size, it is ideal for use in

cellular p hones, portable d evices, business machines, power supplies

and many other industrial/consumer applications.

Specification Features:

•Stand−off Voltage: 5 − 170 Volts

•Peak Power − 200 Watts @ 1 ms (SMF5.0A − SMF58A)

Peak Power − 175 Watts @ 1 ms (SMF60A − SMF170A)

•Maximum Clamp Voltage @ Peak Pulse Current

•Low Leakage

•Response Time is Typically < 1 ns

•ESD Rating of Class 3 (> 16 kV) per Human Body Model

IEC61000−4−2 Level 4 ESD Protection

IEC61000−4−4 40 A ESD Protection

•Low Profile − Maximum Height of 1.0 mm

•Small Footprint − Footprint Area of 8.45 mm2

•Supplied in 8 mm Tape and Reel − 3,000 Units per Reel

•Cathode Indicated by Polarity Band

Mechanical Characteristics:

CASE: Void-free, transfer-molded, thermosetting plastic

Epoxy Meets UL94, VO

LEAD FINISH: 100% Matte Sn (Tin)

MOUNTING POSITION: Any

QUALIFIED MAX REFLOW TEMPERATURE: 260°C

Device Meets MSL 1 Requirements

PLASTIC SURFACE MOUNT

ZENER OVERVOLTAGE

TRANSIENT SUPPRESSOR

5 − 170 VOLTS

200 WATT PEAK POWER

Device Package Shipping

ORDERING INFORMATION

SMFxxxAT1 SOD−123FL 3,000/Tape & Reel

1: CATHODE

2: ANODE

LEAD ORIENTATION IN TAPE:

Cathode Lead to Sprocket Holes

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SOD−123FL

CASE 498

PLASTIC

MARKING DIAGRAM

CATHODE 2

ANODE

XX D

XX = Specific Device Code

D = Date Code

Uni−Directional TVS

IPP

VRWM

VCVBR VF

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MAXIMUM RATINGS

Rating Symbol Value Unit

Maximum Ppk Dissipation (PW−10/1000 s) (Note 1) SMF60A − SMF170A Ppk 175 W

Maximum Ppk Dissipation (PW−10/1000 s) (Note 1) SMF5.0A − SMF58A Ppk 200 W

Maximum Ppk Dissipation @ TA = 25°C, (PW−8/20 s) (Note 2) Ppk 1000 W

DC Power Dissipation @ TA = 25°C (Note 3)

Derate above 25°C

Thermal Resistance from Junction to Ambient (Note 3)

°PD°

RθJA

385

4.0

325

°mW

mW/°C

°C/W

Thermal Resistance from Junction to Lead (Note 3) RθJcathode 26 °C/W

Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C

1. Non−repetitive current pulse at TA = 25°C, per waveform of Figure 2.

2. Non−repetitive current pulse at TA = 25°C, per waveform of Figure 3.

3. Mounted with recommended minimum pad size, DC board FR−4.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless

otherwise noted, VF = 3.5 V Max. @ IF (Note 4) = 12 A)

Symbol Parameter

IPP Maximum Reverse Peak Pulse Current

VCClamping Voltage @ IPP

VRWM Working Peak Reverse Voltage

IRMaximum Reverse Leakage Current @ VRWM

VBR Breakdown Voltage @ IT

ITTest Current

IFForward Current

VFForward Voltage @ IF

4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,

duty cycle = 4 pulses per minute maximum.

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ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.25 Volts @ 200 mA)

VRWM (V) VBR @ IT (V) (Note 6) ITIR @ VRWM VC(Max) IPP(Max) (A)

Device Marking (Note 5) Min Nom Max (mA) (A) (V) (Note 7)

SMF5.0A KE 5 6.4 6.7 7 10 400 9.2 21.7

SMF6.0A KG 6 6.67 7.02 7.37 10 400 10.3 19.4

SMF6.5A KK 6.5 7.22 7.6 7.98 10 250 11.2 17.9

SMF7.0A KM 7 7.78 8.2 8.6 10 100 12 16.7

SMF7.5A KP 7.5 8.33 8.77 9.21 1 50 12.9 15.5

SMF8.0A KR 8 8.89 9.36 9.83 1 25 13.6 14.7

SMF8.5A KT 8.5 9.44 9.92 10.4 1 10 14.4 13.9

SMF9.0A KV 9 10 10.55 11.1 1 5 15.4 13.0

SMF10A KX 10 11.1 11.7 12.3 1 2.5 17 11.8

SMF11A KZ 11 12.2 12.85 13.5 1 2.5 18.2 11.0

SMF12A LE 12 13.3 14 14.7 1 2.5 19.9 10.1

SMF13A LG 13 14.4 15.15 15.9 1 1 21.5 9.3

SMF14A LK 14 15.6 16.4 17.2 1 1 23.2 8.6

SMF15A LM 15 16.7 17.6 18.5 1 1 24.4 8.2

SMF16A LP 16 17.8 18.75 19.7 1 1 26 7.7

SMF17A LR 17 18.9 19.9 20.9 1 1 27.6 7.2

SMF18A LT 18 20 21 22.1 1 1 29.2 6.8

SMF20A LV 20 22.2 23.35 24.5 1 1 32.4 6.2

SMF22A LX 22 24.4 25.6 26.9 1 1 35.5 5.6

SMF24A LZ 24 26.7 28.1 29.5 1 1 38.9 5.1

SMF26A ME 26 28.9 30.4 31.9 1 1 42.1 4.8

SMF28A MG 28 31.1 32.8 34.4 1 1 45.4 4.4

SMF30A MK 30 33.3 35.1 36.8 1 1 48.4 4.1

SMF33A MM 33 36.7 38.7 40.6 1 1 53.3 3.8

SMF36A MP 36 40 42.1 44.2 1 1 58.1 3.4

SMF40A MR 40 44.4 46.8 49.1 1 1 64.5 3.1

SMF43A MT 43 47.8 50.3 52.8 1 1 69.4 2.9

SMF45A MV 45 50 52.65 55.3 1 1 72.7 2.8

SMF48A MX 48 53.3 56.1 58.9 1 1 77.4 2.6

SMF51A MZ 51 56.7 59.7 62.7 1 1 82.4 2.4

SMF54A NE 54 60 63.15 66.3 1 1 87.1 2.3

SMF58A NG 58 64.4 67.8 71.2 1 1 93.6 2.1

SMF60A NK 60 66.7 70.2 73.7 1 1 96.8 1.8

SMF64A NM 64 71.1 74.85 78.6 1 1 103 1.7

SMF70A NP 70 77.8 81.9 86 1 1 113 1.5

SMF75A NR 75 83.3 87.7 92.1 1 1 121 1.4

SMF78A NT 78 86.7 91.25 95.8 1 1 126 1.4

SMF85A NV 85 94.4 99.2 104 1 1 137 1.3

SMF90A NX 90 100 105.5 111 1 1 146 1.2

SMF100A NZ 100 111 117 123 1 1 162 1.1

SMF110A PE 110 122 128.5 135 1 1 177 1.0

SMF120A PG 120 133 140 147 1 1 193 0.9

SMF130A PK 130 144 151.5 159 1 1 209 0.8

SMF150A PM 150 167 176 185 1 1 243 0.7

SMF160A PP 160 178 187.5 197 1 1 259 0.7

SMF170A PR 170 189 199 209 1 1 275 0.6

5. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater

than the DC or continuous peak operating voltage level.

6. VBR measured at pulse test current IT at ambient temperature of 25°C.

7. Surge current waveform per Figure 2 and derate per Figure 3.

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tP, PULSE WIDTH (s)

100

1000

10,000

1.0 10 100

10 01234

100

t, TIME (ms)

VALUE (%)

HALF VALUE − IRSM

PEAK VALUE − IRSM

TYPICAL PROTECTION CIRCUIT

Vin VL

Zin

LOAD

PULSE WIDTH (tP) IS DEFINED

AS THAT POINT WHERE THE PEAK

CURRENT DECAYS TO 50%

OF IRSM.

Figure 1. Pulse Rating Curve Figure 2. 10 X 1000 s Pulse Waveform

1000 10,000

Figure 3. 8 X 20 s Pulse Waveform

PP, PEAK POWER (WATTS)

tr≤ 10 µs

100

00 25 50 75 100 125 150

TA, AMBIENT TEMPERATURE (°C)

120

140

160

Figure 4. Pulse Derating Curve

PEAK PULSE DERATING IN % OF

PEAK POWER OR CURRENT @ TA = 25°C

100

0020406080

t, TIME (s)

% OF PEAK PULSE CURRENT

PULSE WIDTH (tP) IS DEFINED

AS THAT POINT WHERE THE

PEAK CURRENT DECAY = 8 s

PEAK VALUE IRSM @ 8 s

HALF VALUE IRSM/2 @ 20 s

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1.2

1.0

0.8

0.6

0.4

0.2

0−55 25 85 150

T, TEMPERATURE (°C)

V , TYPICAL FORWARD VOLTAGE (VOLTS)

25 50 75 100 125 175

2.5

1.5

T, TEMPERATURE (°C)

P , MAXIMUM POWER DISSIPATION (W)

0.5

150

1000

100

11 10 1000

WORKING PEAK REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

MEASURED @ 50% VRWM

MEASURED @ ZERO BIAS

Figure 5. Typical Derating Factor for Duty Cycle

DERATING FACTOR

1 ms

10 µs

0.7

0.5

0.3

0.05

0.1

0.2

0.01

0.02

0.03

0.07

100 µs

0.1 0.2 0.5 2 5 10 501 20 100

D, DUTY CYCLE (%)

PULSE WIDTH

10 ms

Figure 6. Steady State Power Derating

Figure 7. Forward Voltage Figure 8. Capacitance versus Working Peak

Reverse Voltage

100

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INFORMATION FOR USING THE SOD−123 FLAT LEAD SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the

total design. The footprint for the semiconductor packages

must be the correct size to insure proper solder connection

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

RECOMMENDED FOOTPRINT FOR SOD−123FL

ÉÉÉ

inches

0.91

0.036

1.22

0.048

2.36

0.093

4.19

0.165

POWERMITE POWER DISSIPATION

The power dissipation of the SOD−123 Flat Lead is a

function of the mounting pad size. This can vary from the

minimum pad size for soldering to a pad size given for

maximum power dissipation. Power dissipation for a

surface mount device is determined by TJ(max), the

maximum rated junction temperature of the die, RθJA, the

thermal resistance from the device junction to ambient, and

the operating temperature, TA. Using the values provided

on the data sheet for the SOD−123 Flat Lead package, PD

can be calculated as follows:

PD = TJ(max) − TA

RθJA

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values

into the equation for an ambient temperature TA of 25°C,

one can calculate the power dissipation of the device which

in this case is 385 milliwatts.

PD = 150°C − 25°C= 385 milliwatts

325°C/W

The 325°C/W for the SOD−123 Flat Lead package

assumes the use of the recommended footprint on a glass

epoxy printed circuit board to achieve a power dissipation

of 385 milliwatts. There are other alternatives to achieving

higher power dissipation from the SOD−123 Flat Lead

package. Another alternative would be to use a ceramic

substrate or an aluminum core board such as Thermal

Clad. Using a board material such as Thermal Clad, an

aluminum core board, the power dissipation can be doubled

using the same footprint.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated

temperature of the device. When the entire device is heated

to a high temperature, failure to complete soldering within

a short time could result in device failure. Therefore, the

following items should always be observed in order to

minimize the thermal stress to which the devices are

subjected.

•Always preheat the device.

•The delta temperature between the preheat and

soldering should be 100°C or less.*

•When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering

method, the difference shall be a maximum of 10°C.

•The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

•When shifting from preheating to soldering, the

maximum temperature gradient shall be 5°C or less.

•After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and

result in latent failure due to mechanical stress.

•Mechanical stress or shock should not be applied

during cooling.

* Soldering a device without preheating can cause excessive

thermal shock and stress which can result in damage to the

device.

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OUTLINE DIMENSIONS

Transient Voltage Suppressor − Surface Mounted

SOD−123FL

CASE 498−01

ISSUE O

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSIONS A AND B DO NOT INCLUDE MOLD

FLASH.

4. DIMENSIONS D AND J ARE TO BE MEASURED

ON FLAT SECTION OF THE LEAD: BETWEEN 0.10

AND 0.25 MM FROM THE LEAD TIP.

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A1.50 1.80 0.059 0.071

B2.50 2.90 0.098 0.114

C0.90 1.00 0.039

D0.70 1.10 0.028 0.043

E0.55 0.95 0.022 0.037

H0.00 0.10 0.000 0.004

J0.10 0.20 0.004 0.008

K3.40 3.80 0.134 0.150

L0 8 °°0 8 °°

POLARITY INDICATOR

OPTIONAL AS NEEDED

0.035

200 Watt Peak Power

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ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make

changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any

particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be

validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death

may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC

and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees

arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

JAPAN: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local

Sales Representative.

SMF5.0AT1/D

Thermal Clad is a registered trademark of the Bergquist Company.

Literature Fulfillment:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: ONlit@hibbertco.com

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