RECTRON
SEMICONDUCTOR
FEATURES
*
*
*
*
Power dissipation
PCM 0.3 W(Tamb=25OC)
Collector current
ICM 0.3 A
Collector-base voltage
V(BR)CBO: 30 V
Operating and storage junction temperature range
TJ,Tstg: -55OCto+150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
MMBTA13LT1
Dimensions in inches and (millimeters)
2006-3
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
NOTES :
Max. Instantaneous Forward Voltage at IF= 10mA
CHARACTERISTICS SYMBOL UNITS
417
-
Volts
oC/WThermal Resistance Junction to Ambient
RATINGS
Zener Current ( see Table "Characteristics" )
Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25OC
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
-
PD
TJ
TSTG
R θJA
VF
VALUE
MAX.
-
-
TYP.
-
-
MIN.
UNITS
-
mW
-
300
1. Alumina=0.4*0.3*0.024in.99.5% alumina
-55 to +150
-55 to +150
oC
oC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified.
0.118(3.000)
0.012(0.30)
0.020(0.50)
0.003(0.080)
0.006(0.150)
0.110(2.800)
0.019(2.00)
0.071(1.80)
0.100(2.550)
0.089(2.250)
0.020(0.500)
0.012(0.300)
0.043(1.100)
0.035(0.900)
0.004(0.100)
0.000(0.000)
0.037(0.950)TYP
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
ELECTRICAL CHARACTERISTICS
(@TA=25OC unless otherwise noted)
OFF CHARACTERISTICS
ON CHARACTERISTICS(2)
SMALL-SIGNAL CHARACTERISTICS
Chatacteristic
Collector-Emitter Breakdown Voltage (IC= 100µAdc, VBE= 0)
Collector Cutoff Current (VCB= 30Vdc, IE= 0)
Emitter Cutoff Current (VEB= 10Vdc, IC= 0)
DC Current Gain (IC= 10mAdc, VCE= 5.0Vdc)
Collector-Emitter Saturation Voltage (IC= 100mAdc, IB= 0.1mAdc)
(IC= 100mAdc, VCE= 5.0Vdc)
V(BR)CES 30 - Vdc
ICBO - 100 nVdc
IEBO - 100 nVdc
Vdc
fT125 - MHz
hFE
-
1.5
-
10,000
-
5000
2.0
-
-
VCE(sat)
Symbol Min Max Unit
Base-Emitter On Voltage (IC= 100mAdc, VCE= 5.0Vdc)
Current-Gain-Bandwidth Product (3) (IC= 10mAdc, VCE= 5.0Vdc, f= 100MHz)
Vdc
VBE
RECTRON
NOTES : 2. Pulse Test: Pulse Width<300µs,Duty Cycle<2.0%
3. fT = |hfe|.ftest
- -
RS,SOURCE RESISTANCE(KΩ)
NF,NOISE FIGURE(dB)
RECTRON
Figure 2 Noise Current
Figure 4 Wideband Noise FigureFigure 3. Total Wideband Noise Voltage
BANDWIDTH = 10 Hz TO 15.7 kHz
50
100
200
500
20
5.0
50
70
100
200
30
10
20
1.0
10
10
20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
BANDWIDTH = 1.0 Hz
RS 0 BANDWIDTH = 1.0 Hz
IC= 1.0 mA
IC= 1.0 mA
IC= 1.0 µA
100µΑ
100µΑ
10µΑ
10µΑ
2.0 5.0 10 20 50 100 200 500 100
BANDWIDTH = 10 Hz TO 15.7 kHz
8.0
10
12
14
6.0
0
4.0
1.0 2.0 5.0 10 20 50 100 200 500 100
2.0
1.0 mA
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
VCE=5.0V
f=100MHz
TJ=25
O
C
Figure 5 Capacitance
VR,REVERSE VOLTAGE(VOLTS)
5.0
7.0
10
20
3.0
Figure 6 High Frequency Current Gain
IC,COLLECTOR CURRENT (mA)
2.0
0.04
4.0
2.0
1.0
0.8
0.6
0.4
0.2
TJ=25
O
C
C, CAPACITANCE(PF)
|hfe|, SMALL-SIGNALCURRENT GAIN
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
Cibo
0.5 1.0 2.0 0.5 10 20 50 100 200 500
Figure 1 Noise Voltage
f,FREQUENCY(Hz) f,FREQUENCY(Hz)
RS,SOURCE RESISTANCE(KΩ)
en,NOISE VOLTAGE(nV)
in,NOISE CURRENT(PA)
VT,TOTAL WIDEBAND NOISE VOLTAGE(nV)
RATING AND CHARACTERISTICS CURVES ( MMBTA13LT1 )
VCE=5.0V
f=100MHz
TJ=25
O
C
Cobo
IC=10µA
IC=1.0mA
100 µA100 µA
10 µA
~
~
RECTRON
RATING AND CHARACTERISTICS CURVES ( MMBTA13LT1 )
Figure 8 Collector Saturation Region
Figure 10 Temperature CoefficientsFigure 9 "ON" Voltages
Figure 7 DC Current Gain
IB,BASE CURRENT (µA)
200 k
5.0
1.5
2.0
2.5
3.0
1.0
0.5
hFE, DC CURRENT GAIN
VCE, COLLECTOR-EMITTER VOLTAGE(VOLTS)
100 k
70 k
50 k
30 k
20 k
10 k
7.0 k
5.0 k
3.0 k
2.0 k 7.0 10 20 30 50 70 100 200 300 500
VCE= 5.0 V
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
IC = 10 mA 50 mA 250 mA 500 mA
1.6
5.0
-1.0
V, VOLAGE (VOLTS)
1.4
1.2
1.0
0.8
0.6 7.0 10 20 30 50 70 100 200 300 500
RθV,TEMPERATURE COEFFICIENTS(mV/5C)
VBE(sat)@IC/IB=1000
VBE(on) @ VCE = 5.0V
VCE(sat)@IC/IB=1000
Θ
VB FOR VBE
-2.0
-3.0
-4.0
-5.0
-6.0
5.0 7.0 10 20 30 50 70 100 200 300 500
*APPLIES FOR IC/IB < hFE/3.0
*R ΘVC FOR VCE(sat)
Figure 11 Thermal Response
t, TIME (ms)
1.0
r(t), TRANSIENT THERMAL
2.0 5.01.00.50.20.1
RESISTANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01 20 5010 200 500100 1.0 k 2.0 k 5.0 k 10 k
D = 0.5
0.2
0.1 0.05 SINGLE PULSE
SINGLE PULSE
ZθJC(t)=r(t) RθJC TJ(pk)-TC=P(pk)ZθJC(t)
ZθJA(t)=r(t) RθJA TJ(pk)-TA=P(pk)ZθJA(t)
TJ=125
O
C
TJ=25
O
C
TJ= 25
O
C
25
O
C TO 125
O
C
25
O
C TO 125
O
C
-55
O
C TO 25
O
C
-55
O
C TO 25
O
C
25
O
C
-55
O
C
IC,COLLECTOR CURRENT (mA)
IC,COLLECTOR CURRENT (mA) IC,COLLECTOR CURRENT (mA)
-
RECTRON
RATING AND CHARACTERISTICS CURVES ( MMBTA13LT1 )
Figure 12 Active Region Safe Operating Area
VCE,COLLECTOR-EMITTER VOLTAGE(VOLTS)
1.0 k
0.4
700
500
300
200
100
70
50
30
20
10 0.6 1.0 2.0 4.0 6.0 10 20 40
IC, COLLECTOR CURRENT(mA)
TA=25
O
C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms
100µs
1.0 s
TC=25
O
C
