RECTRON SEMICONDUCTOR MMBTA13LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM 0.3 A * Collector-base voltage V(BR)CBO: 30 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC SOT-23 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 0.037(0.950)TYP 0.006(0.150) 0.003(0.080) 0.043(1.100) 0.035(0.900) 0.020(0.500) 0.012(0.300) 0.020(0.50) 0.004(0.100) 0.000(0.000) 0.100(2.550) 0.089(2.250) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.019(2.00) 0.071(1.80) 0.118(3.000) 0.110(2.800) Ratings at 25 o C ambient temperature unless otherwise specified. Dimensions in inches and (millimeters) RATINGS SYMBOL Zener Current ( see Table "Characteristics" ) VALUE UNITS - - - o O Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C PD 300 mW Max. Operating Temperature Range TJ -55 to +150 o C TSTG -55 to +150 o C Storage Temperature Range ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Max. Instantaneous Forward Voltage at IF= 10mA NOTES : 1. Alumina=0.4*0.3*0.024in.99.5% alumina SYMBOL MIN. TYP. MAX. R JA - - 417 VF - - - UNITS o C/W Volts 2006-3 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic Symbol Min Max Unit V(BR)CES 30 - Vdc Collector Cutoff Current (V CB = 30Vdc, I E = 0) ICBO - 100 nVdc Emitter Cutoff Current (V EB = 10Vdc, I C = 0) IEBO - 100 nVdc 5000 - 10,000 - VCE(sat) - 1.5 Vdc VBE - 2.0 Vdc fT 125 - MHz OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 100Adc, V BE = 0) ON CHARACTERISTICS(2) DC Current Gain (I C = 10mAdc, V CE = 5.0Vdc) (I C = 100mAdc, V CE = 5.0Vdc) Collector-Emitter Saturation Voltage (I C = 100mAdc, I B = 0.1mAdc) Base-Emitter On Voltage (I C = 100mAdc, V CE = 5.0Vdc) hFE - SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (3) (I C = 10mAdc, V CE = 5.0Vdc, f= 100MHz) <300s,Duty Cycle<2.0% NOTES : 2. Pulse Test: Pulse Width3. fT = |hfe|.ftest RECTRON RATING AND CHARACTERISTICS CURVES ( MMBTA13LT1 ) 500 2.0 BANDWIDTH = 1.0 Hz 200 in,NOISE CURRENT(PA) en,NOISE VOLTAGE(nV) BANDWIDTH = 1.0 Hz RS~0 100 10 50 100 20 IC= 1.0 mA 10 1.0 0.7 0.5 IC= 1.0 mA 0.3 0.2 100 0.1 0.07 0.05 10 0.03 5.0 10 20 50 100 200 500 1 k 2 k 0.02 10 20 5 k 10 k 20 k 50 k 100 k 50 100 200 500 1 k 2 k f,FREQUENCY(Hz) Figure 2 Noise Current 200 14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz NF,NOISE FIGURE(dB) VT,TOTAL WIDEBAND NOISE VOLTAGE(nV) Figure 1 Noise Voltage 100 IC==10A 1.0 A 70 50 100 A 30 10 10 A 8.0 1.0 mA 10 1.0 2.0 4.0 IC=1.0mA 2.0 5.0 10 20 50 100 200 500 0 1.0 100 2.0 5.0 10 20 50 100 200 500 RS,SOURCE RESISTANCE(K) RS,SOURCE RESISTANCE(K) Figure 3. Total Wideband Noise Voltage Figure 4 Wideband Noise Figure 100 |hfe|, SMALL-SIGNALCURRENT GAIN 4.0 TJ=25OC 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 100 A 6.0 20 20 C, CAPACITANCE(PF) 5 k 10 k 20 k 50 k 100 k f,FREQUENCY(Hz) 0.1 0.2 0.4 1.0 2.0 4.0 10 VR,REVERSE VOLTAGE(VOLTS) Figure 5 Capacitance 20 40 2.0 VVCE=5.0V CE=5.0V f=100MHz f=100MHz TJ=25OCO TJ=25 C 1.0 0.8 0.6 0.4 0.2 0.5 1.0 2.0 0.5 10 20 50 100 200 500 IC,COLLECTOR CURRENT (mA) Figure 6 High Frequency Current Gain RECTRON RATING AND CHARACTERISTICS CURVES ( MMBTA13LT1 ) VCE, COLLECTOR-EMITTER VOLTAGE(VOLTS) 200 k hFE, DC CURRENT GAIN TJ=125OC 100 k 70 k 50 k 25OC 30 k 20 k 10 k 7.0 k 5.0 k -55OC VCE= 5.0 V 3.0 k 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 500 IC,COLLECTOR CURRENT (mA) 3.0 TJ= 25OC 2.5 IC = 10 mA 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 IB,BASE CURRENT (A) Figure 8 Collector Saturation Region RV,TEMPERATURE COEFFICIENTS(mV/5C) 1.6 TJ=25OC V, VOLAGE (VOLTS) 1.4 VBE(sat)@IC/IB=1000 1.2 VBE(on) @ VCE = 5.0V 1.0 VCE(sat)@IC/IB=1000 0.6 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 5.0 7.0 1.0 0.7 0.5 10 20 30 250 mA 500 mA 2.0 Figure 7 DC Current Gain 0.8 50 mA 50 70 100 200 300 500 -1.0 -2.0 *APPLIES FOR IC/IB -< hFE/3.0 25OC TO 125OC *R VC FOR VCE(sat) -55OC TO 25OC -3.0 25OC TO 125OC -4.0 VB FOR VBE -5.0 -55OC TO 25OC -6.0 5.0 7.0 10 20 30 50 70 100 200 300 IC,COLLECTOR CURRENT (mA) IC,COLLECTOR CURRENT (mA) Figure 9 "ON" Voltages Figure 10 Temperature Coefficients 500 D = 0.5 0.2 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE ZJC(t)=r(t) RJC TJ(pk)-TC=P(pk)ZJC(t) ZJA(t)=r(t) RJA TJ(pk)-TA=P(pk)ZJA(t) 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k Figure 11 Thermal Response RECTRON RATING AND CHARACTERISTICS CURVES ( MMBTA13LT1 ) IC, COLLECTOR CURRENT(mA) 1.0 k 700 500 300 200 1.0 ms O O TA=25 C TC=25 C 100s 1.0 s 100 70 50 30 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 20 10 0.4 0.6 1.0 2.0 4.0 6.0 10 20 VCE,COLLECTOR-EMITTER VOLTAGE(VOLTS) 40 Figure 12 Active Region Safe Operating Area RECTRON