BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits BVDSS RDS(ON) 50V 3.5 @ VGS = 10V ID TA = +25C 200mA Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. System/Load Switch Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/. This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ Mechanical Data Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.008 grams (Approximate) D SOT23 D G S G S Top View Equivalent Circuit Top View Ordering Information (Note 4) Notes: Part Number Case Packaging BSS138-7-F SOT23 3000/Tape & Reel BSS138-13-F SOT23 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/ BSS138 Document number: DS30144 Rev. 23 - 2 1 of 6 www.diodes.com October 2020 (c) Diodes Incorporated BSS138 Marking Information K38 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: H = 2020) M or M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2003 P ... ... 2020 H 2021 I 2022 J 2023 K 2024 L 2025 M 2026 N 2027 O 2028 P 2029 R Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 20k Gate-Source Voltage Continuous Gate-Source Voltage Non Repetitive, Pulse Width<50s Drain Current Continuous Pulsed Drain Current (10s Pulse Duty Cycle = 1%) Symbol VDSS VDGR VGSS ID IDM Value 50 50 20 40 200 1 Unit V V V V mA A Value 300 417 -55 to +150 Unit mW C/W C Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Symbol PD RJA TJ, TSTG Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 7) Turn-On Delay Time Turn-Off Delay Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 50 75 0.5 100 V A nA VGS = 0V, ID = 250A VDS = 50V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) RDS(ON) gFS 0.5 100 1.2 1.4 1.5 3.5 V mS VDS = VGS, ID = 250A VGS = 10V, ID = 0.22A VDS = 25V, ID = 0.2A, f = 1.0kHz Ciss Coss Crss 50 25 8.0 pF pF pF VDS = 10V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) 20 20 ns ns VDD = 30V, ID = 0.2A, RGEN = 50 5. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Incorporated's suggested pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html. 6. Short duration pulse test used to minimize self-heating effect. 7. Guarantee by design. Not subject to production testing. BSS138 Document number: DS30144 Rev. 23 - 2 2 of 6 www.diodes.com October 2020 (c) Diodes Incorporated BSS138 0.6 0.8 VGS = 3.5V 0.5 ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN-SOURCE CURRENT (A) T CC TjJ==2525 V GS = 3.25V 0.4 VGS = 3.0V 0.3 VGS = 2.75V 0.2 VGS = 2.5V 0.1 0 1 0.7 0.5 150C 0.4 0.3 0.2 0.1 0 0 2 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE () 2.25 2.05 1.85 VGS = 10V ID = 0.5A 1.65 1.45 1.25 VGS = 4.5V ID = 0.075A 1.05 0.85 4.5 1.6 1.2 150C VGS = 2.5V 6 5 25C 4 3 -55C 2 1 0 -50 -25 0 25 50 75 100 125 150 TTJj,, JUNCTION JUNCTION TEMPERATURE TEMPERATURE ( (C)) Fig. 4 Gate Threshold Variation vs. Junction Ambient Temperature Temperature 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 ID, DRAIN-CURRENT (A) Fig. 5 Drain-Source On-Resistance vs. Drain-Current 0 BSS138 Document number: DS30144 Rev. 23 - 2 250 IDID==250A 0.4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 8 ID = 1mA 0.8 -5 45 145 95 TTJj, JUNCTION TEMPERATURE TEMPERATURE ( (C)) Fig. 3 Drain-Source On-Resistance vs. Junction Temperature RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 4 2.0 0.65 -55 0 0.5 1 1.5 2 2.5 3.5 3 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics 2.4 2.45 7 25C 0.6 3 4 5 6 7 8 9 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Current vs. Drain-Source Voltage 0 -55C VDS = 1V 3 of 6 www.diodes.com 9 8 VGS = 2.75V 7 6 150C 5 4 25C 3 2 -55C 1 0 0.1 0.15 0.25 0.2 ID, DRAIN-CURRENT (A) Fig. 6 Drain-Source On-Resistance vs. Drain-Current 0 0.05 October 2020 (c) Diodes Incorporated 6 VGS = 4.5V 5 150C 4 3 2 25C 1 3.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () BSS138 -55C 0 VGS = 10V 3 2.5 2 1.5 25C 1 -55C 0.5 0 0.1 0.3 0.5 0.2 0.4 ID, DRAIN-CURRENT (A) Fig. 8 Drain-Source On Resistance vs. Drain-Current 0.1 0.3 0.5 0.2 0.4 ID, DRAIN-CURRENT (A) Fig. 7 Drain-Source On-Resistance vs. Drain-Current 0 150C 1 0 100 C, CAPACITANCE (pF) ID, DIODE CURRENT (A) VGS = 0V f = 1MHz 0.1 150C -55C 0.01 25C CiSS Ciss 10 COSS Coss CrSS Crss 1 0.001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage BSS138 Document number: DS30144 Rev. 23 - 2 4 of 6 www.diodes.com 0 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain-Source Voltage October 2020 (c) Diodes Incorporated BSS138 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7 H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0 8 -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X BSS138 Document number: DS30144 Rev. 23 - 2 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 5 of 6 www.diodes.com October 2020 (c) Diodes Incorporated BSS138 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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