© 2003 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 1mA 550 V
VGS(th) VDS = VGS, ID = 8mA 2.5 5.0 V
IGSS VGS = ±30 V, VDS = 0 ±200 nA
IDSS VDS = VDSS TJ = 25°C 100 µA
VGS = 0 V TJ = 125°C5 mA
RDS(on) VGS = 10 V, ID = 0.5 • ID25 72 mΩ
Note 1
DS98999C(10/03)
PLUS 264TM (IXFB)
G = Gate D = Drain
S = Source TAB = Drain
S
G
D(TAB)
HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
Features
zDouble metal process for low gate
resistance
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
zFast intrinsic rectifier
Applications
zDC-DC converters
zSwitched-mode and resonant-mode
power supplies, >500kHz switching
zDC choppers
zPulse generation
zLaser drivers
Advantages
zPLUS 264TM package for clip or spring
mounting
zSpace savings
zHigh power density
IXFB 72N55Q2 VDSS = 550 V
ID25 = 72 A
RDS(on)= 72 mΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250 ns
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 550 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ550 V
VGS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C72A
IDM TC= 25°C, pulse width limited by TJM 284 A
IAR TC= 25°C72A
EAR TC= 25°C60mJ
EAS TC= 25°C 5.0 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 20 V/ns
TJ≤ 150°C, RG = 2 Ω
PDTC= 25°C 890 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in.) from case for 10 s 300 °C
FcMounting Force 30...120/7.5...27 N/lb
Weight 10 g
Preliminary Data Sheet
http://store.iiic.cc/
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFB 72N55Q2
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25 Note 1 40 57 S
Ciss 10500 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1500 pF
Crss 230 pF
td(on) 30 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 23 ns
td(off) RG = 1 Ω (External) 58 ns
tf10 ns
Qg(on) 258 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 65 nC
Qgd 123 nC
RthJC 0.14 K/W
RthCK 0.13 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 72 A
ISM Repetitive; 288 A
pulse width limited by TJM
VSD IF = IS, VGS = 0 V, Note 1 1.5 V
trr 250 ns
QRM 1.2 µC
IRM 8A
IF = 25A
-di/dt = 100 A/µs
VR = 100 V
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 264TM Outline
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
http://store.iiic.cc/
© 2003 IXYS All rights reserved
IXFB 72N55Q2
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
20
40
60
80
100
120
140
160
180
0 2 4 6 8 101214161820
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
5V
6V
7V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
9
18
27
36
45
54
63
72
024681012
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
9
18
27
36
45
54
63
72
0123456
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D25
V
alue vs.
Junction Temperature
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S (on)
- Normalize
d
I
D
= 72A
I
D
= 36A
V
GS
= 10V
Fig. 6. Drain Curre nt vs. Case
Temperature
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 5. R
DS(on)
Normalized to I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
0 20 40 60 80 100 120 140 160 180
I
D
- Amperes
R
D S (on)
- Normalize
d
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
http://store.iiic.cc/
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFB 72N55Q2
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Fig. 11. Capacitance
100
1000
10000
100000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - pF
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 40 80 120 160 200 240 280
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 275V
I
D
= 36A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
10
20
30
40
50
60
70
80
90
100
3.544.555.566.57
V
G S
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
-40ºC
Fig. 12. Maxim um Transient Therm al
Resistance
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
1 10 100 1000
Pulse Width - milliseconds
R
(th) J C
-
(ºC/W)
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
0 20 40 60 80 100 120 140 160
I
D
- Amperes
g
f s
- Siemens
T
J
= -40ºC
25ºC
125ºC
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
20
40
60
80
100
120
140
160
180
200
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
V
S D
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
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