AM29F400BB-70SEB - AMD - Datasheet.Cloud

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Am29F400B

Known Good Die

Data Sheet

SUPPLEMENT

Publicati on# 21258 Rev: E Amendment/+5

Issue Date: June 27, 2001

Am29F400B Known Good Die

4 Megabit (512 K x 8-Bit/256 K x 16-Bit)

CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 2

DISTINCTIVE CHARACTERISTICS

■Single power supply operation

— 5.0 volt-only operation for read, erase, and

program operations

— Minimizes system level requirements

■Manufactured on 0.32 µm process technology

— Compatible with 0.5 µm Am29F400 device

■High performan c e

— Access time as fast as 70 ns

■Low power consumption (typical values at

5MHz)

— 1 µA standby mode current

— 20 mA read current (byt e mode)

— 28 mA read current (word mode)

— 30 mA program/erase current

■Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

sev en 64 Kbyte sectors (byte mode)

— One 8 Kword, two 4 Kword, one 16 Kword, and

sev en 32 Kw ord sectors (word mode)

— Supports full chip erase

— Sector Protection features:

A hardw are method of loc king a sector to pre vent

any program or erase operations within that

sector

Sectors can be locked via programming

equipment

Temporary Sector Unprotect f eature allo ws code

changes in prev iously locked sectors

■Top or bottom boot block configurations

available

■Embedded Algorithms

— Embedded Erase algorithm automatically

preprogr ams and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■Minimum 1,000,000 write cycle per sector

guaranteed

■Compatibility with JEDEC standards

— Pinout and software compatible with single-

power-supply Flash

— Superior inadvertent write protection

■Data# Polling and toggle bits

— Provides a software method of detecting program

or erase operation completion

■Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting

program or erase cycle completion

■Erase Suspend/Erase Resume

— Suspends an er ase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

■Hardware reset pin (RESET#)

— Hardware method to res et the device to reading

array data

■20-year data retention at 125°C

■Tested to datasheet specifications at

temperature

— Contact AMD for higher temperature range

devices

■Quality and reliabi lity levels equivalent to

standard packaged components

2 Am29F400B Known Good Die

SUPPLEMENT

GENERAL DESCRIPTION

The Am29F400B in Known Good Die (KGD) form is a

4 Mbit, 5.0 volt-only Flash memory. AMD defines KGD

as standard product in die form, tested for functionality

and speed. AMD KGD products have the same reli-

ability and quality as AMD products in packaged form.

Am29F400B Features

The Am29F400B is a 4 Mbit, 5.0 volt-only Flash

memory organized as 524,288 bytes or 262,144 words.

The word-wide data (x16) appears on DQ15–DQ0; the

byte-wide (x8) data appears on DQ7–DQ0. This device

is designed to be programmed in-system with the stan-

dard system 5.0 volt VCC supply. A 12.0 V VPP is not

required for write or erase operations. The device can

also be programmed in standard EPROM programmers.

This device is manufactured using AMD’s 0.32 µm

process technolog y, and off ers all the f eatures an d ben-

efits of the Am29F400, which was manufactured using

0.5 µm process technology.

To eliminate bus contention the device has separate

chip enable (CE#), write enable (WE#) and output

enable (OE#) controls.

The de vice requires only a single 5. 0 v o lt po wer sup-

ply for both read and wr ite functions. Internally gener-

ated and regulated voltages are provided for the

program and erase operations.

The de vice is entirely command set compatib le with the

JEDEC single-power-supply Flash standard. Com-

mands are written to the command register using stan-

dard microprocessor write timings. Register contents

serve as input to an internal state-machine that con-

trols the er ase and programming circuitry. Write cycles

also internally latch addresses and data neede d f or the

programming and erase operations. Reading data out

of the device is similar to reading from other Flash or

EPROM de vices.

Device programming occurs by executing the program

command sequence. This initiates the Embedded

Program algorithm—an internal algorithm that auto-

matically times the program pulse widths and verifies

proper cell margin.

Device erasure occurs by executing the erase com-

mand sequence. This initiates the Embedded Erase

algorithm—an internal algorithm that automatically

preprograms the array (if it is not already pro-

grammed) before executing the erase operation. Dur-

ing erase, the device automatically times the erase

pulse widths and verifies proper cell margin.

The host system can detect whether a program or

erase operation is complete by obser ving the RY/BY#

pin, or by reading the DQ7 (Data# Polling) and DQ6

(toggle) status bits. After a program or erase cycle has

been completed, the de v ice is ready to read arr ay data

or accept another command.

The sector erase arc hitecture al lows memo ry se ctors

to be erased and reprogrammed without affecting the

data contents of other sectors. The device is fully

erased when shipped from the factory.

Hardware data protection measures include a low

VCC detector that automatically inhibits write opera-

tions during power transitions. The hardware sector

protection feature disables both program and erase

operations in any combination of the sectors of mem-

ory. This can be achie v ed via prog ramming equipment.

The Erase Suspend feature enables the user to put

erase on hold for any period of time to read data from,

or program data to, any sector that is not selected for

erasure . True bac kgro und eras e can thus be achie ved.

The hardware RESET# pin terminates any operation

in progress and resets the internal state machine to

reading arr a y data. The RESET# pin ma y be tied to the

system reset circuitr y. A system reset would thus also

reset the device, enabling the system microprocessor

to read the boot-up firmware from the Flash memory.

The system can place the device into the standb y mode.

Pow er c onsumption is g re atly r educed in t his mode .

AMD’s Flash technology combines years of Flash

memory manufacturing experience to produce the

highest levels of quality, reliability and cost effectiveness.

The device electri cally erases all bits within a sector

simultaneously via Fowler-Nordheim tunneling. The

data is programmed using hot electron injection.

Electrical Specifications

Refer to the Am29F400B data sheet, document

number 21505, for full electrical specifications on the

Am29F400B in KGD form.

Am29F400B Known Good Die 3

SUPPLEMENT

PRODUCT SELECTOR GUIDE

DIE PHOTOGRAPH DIE PAD LOCATIONS

Family Part Number Am29F400B KGD

Speed Option VCC = 5.0 V ± 5% -75

VCC = 5.0 V ± 10% -90 -120

Max access time, ns (tACC)7090120

Max CE# access time, ns (tCE)7090120

Max OE# access time, ns (tOE)303550

23456789

13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29

AMD logo location

3537383940414243136

12 32

30 31

4 Am29F400B Known Good Die

SUPPLEMENT

PAD DESCRIPTION

Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.

Pad Signal Pad Center (mils) Pad Center (millimeters)

XYXY

CC 0.00 0.00 0.0000 0.0000

2 DQ4 6.87 0.00 0.1745 0.0000

3 DQ12 12.78 0.00 0.3246 0.0000

4 DQ5 18.62 0.00 0.4729 0.0000

5 DQ13 24.53 0.00 0.6231 0.0000

6 DQ6 30.37 0.00 0.7714 0.0000

7 DQ14 36.29 0.00 0.9218 0.0000

8 DQ7 42.12 0.00 1.0698 0.0000

9 DQ15/A-1 48.04 0.00 1.2202 0.0000

10 VSS 55.68 –1.35 1.4143 –0.0343

11 BYTE# 57.48 6.50 1.4600 0.1651

12 A16 57.48 18.04 1.4600 0.4582

13 A15 57.13 172.01 1.4511 4.3691

14 A14 51.29 172.01 1.3028 4.3691

15 A13 45.87 172.01 1.1651 4.3691

16 A12 40.04 172.01 1.0170 4.3691

17 A11 34.61 172.01 0.8791 4.3691

18 A10 28.78 172.01 0.7310 4.3691

19 A9 23.36 171.76 0.5933 4.3627

20 A8 17.43 172.01 0.4427 4.3691

21 WE# 12.00 172.01 0.3048 4.3691

22 RESET# 2.42 175.78 0.0615 4.4648

23 RY/BY# –9.49 175.78 –0.2411 4.4648

24 A17 –24.48 172.01 –0.6218 4.3691

25 A7 –30.32 172.01 –0.7701 4.3691

26 A6 –35.74 172.01 –0.9078 4.3691

27 A5 –41.57 172.01 –1.0559 4.3691

28 A4 –47.00 172.01 –1.1938 4.3691

29 A3 –52.83 172.01 –1.3419 4.3691

30 A2 –58.25 172.01 –1.4796 4.3691

31 A1 –64.09 172.01 –1.6279 4.3691

32 A0 –64.44 18.04 –1.6368 0.4582

33 CE# –64.44 6.50 –1.6368 0.1651

34 VSS –64.44 –3.79 –1.6368 –0.0962

35 OE# –54.94 –2.27 –1.3955 –0.0576

36 DQ0 –47.36 0.00 –1.2030 0.0000

37 DQ8 –41.45 0.00 –1.0528 0.0000

38 DQ1 –35.61 0.00 –0.9045 0.0000

39 DQ9 –29.69 0.00 –0.7541 0.0000

40 DQ2 –23.86 0.00 –0.6061 0.0000

41 DQ10 –17.94 0.00 –0.4557 0.0000

42 DQ3 –12.11 0.00 –0.3076 0.0000

43 DQ11 –6.19 0.00 –0.1572 0.0000

Am29F400B Known Good Die 5

SUPPLEMENT

ORDERING INFORMATION

Standard Pr o ducts

AMD standa rd prod ucts are availab le in several package s and o perating ranges . The or der n umber ( Valid Co mbinatio n) is

formed by a combination of the following:

Valid Combinations

Valid Combinations list configurations planned to be sup-

ported in v olume for this device. Consult the local AMD sales

office to confirm a vailability of specific valid combinations and

to check on newly released combinations.

Am29F400B T -75 DP C 2 DIE REVISION

This number refers to the specific AMD manufacturing process and

product technology reflected in this document. It is entered in the

revision field of AMD standard product nomenclature.

TEMPERATURE RANGE

C=Commercial (0°C to +70°C)

I = Industrial (–40°C to +85°C)

E = Extended (–55°C to +125°C)

Contact A MD for higher temperature range devices.

PACKAGE TYPE AND

MINIMUM ORDER QUANTITY

DP = Waffle Pack

140 die per 5 tray stack

DG = Gel-Pak® Die Tray

594 die per 6 tray stack

DT = Surftape™ (Tape and Reel)

2500 pe r 7-inch reel

DW = Gel-Pak® Wafer Tray (sawn wafer on frame)

Call AMD sales office for minimum o rder quantity

SPEED OPTION

See Product Selector Guide and Valid Combinations

BOOT CODE SECTOR ARCHITECTURE

T = Top sector

B = Bottom sector

DEVICE NUMBER/DESCRIPTION

Am29F400B Known Good Die

4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS Flash Memory—Die Revision 2

5.0 Volt-only Program and Erase

Valid Combinations

AM29F400BT-75

AM29F400BB-75 DPC 2, DPI 2, DPE 2,

DGC 2, DGI 2, DGE 2,

DTC 2, DTI 2, DTE 2,

DWC 2, DWI 2, DWE 2

AM29F400BT-90

AM29F400BB-90

AM29F400BT-120

AM29F400BB-120

6 Am29F400B Known Good Die

SUPPLEMENT

PACKAGING INFORMATION

Surftape Packa g ing

Gel-Pak and Waffle Pack Packaging

Direction of Feed

Orientation relative to

leading edge of tape

and reel

AMD logo location

12 mm

Orientation relativ e to

top left cor n er of

Gel-Pak

and Waffle Pack

cavity plate

AMD logo location

Am29F400B Known Good Die 7

SUPPLEMENT

PRODUCT TEST FLOW

Figure 1 provides an over view of AMD’s Known Good

Die test f low. For more detailed inf ormation, refer to the

Am29F400B product qualification database supple-

ment f or KGD. AMD implements quality assurance pro-

cedures throughout the product test flow. In addition,

an off-line quality monitoring program (QMP) further

guarantees AMD quality standards are met on Known

Good Die products. These QA procedures also allow

AMD to produce KGD products without requiring or

implementing burn-in.

Figure 1. AMD KGD Product Test Flow

Wafer S o rt 1

Bake

24 hours at 250°C

Wafer S o rt 2

Wafer S o rt 3

High Temperature

Packaging for Shipm ent

Shipment

DC Parameters

Functionality

Programmability

Erasability

Data Retention

DC Parameters

Functionality

Programmability

Erasability

DC Parameters

Functionality

Programmability

Erasability

Speed

Incoming Ins pec tion

Wafer Saw

Die Separation

100% Visual Ins pec tion

Die Pack

8 Am29F400B Known Good Die

SUPPLEMENT

PH YSICAL SPECIFICATIONS

Die Dimensions . . . . . . . . . . . . . . 135 mils x 198 mils

. . . . . . . . . . . . . . . . . . . . . . . . . . .3.42 mm x 5.02 mm

Die Thickness. . . . . . . . . . . . . . . . . ~500 µm/~20 mils

Bond Pad Size . . . . . . . . . . . . . . 4.69 mils x 4.69 mils

. . . . . . . . . . . . . . . . . . . . . . . . . .115.9 µm x 115.9 µm

Pad Area Free of Passivation . . . . . . . . . 13.98 mils 2

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9,025 µm2

Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43

Bond Pad Metallization . . . . . . . . . . . . . . . . . . . Al/Cu

Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,

. . . . . . . . . . . . . . . . . . . . may be grounded (optional)

Passivation. . . . . . . . . . . . . . . . . . . . . . SiN/SOG/SiN

DC OPERATING CONDITIONS

VCC (Suppl y Voltage). . . . . . . . . . . . . . .4.5 V to 5.5 V

Junction Temperature Under Bias . .TJ (max) = 130°C

Operating Temperature

Commercial . . . . . . . . . . . . . . . . . . . 0°C to +70°C

Industrial . . . . . . . . . . . . . . . . . . . –40°C to +85°C

Extended . . . . . . . . . . . . . . . . . . –55°C to +125°C

Contact AMD for higher temperature range devic es.

MANUFACTURING INFORMATION

Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . .FASL

Test . . . . . . . . . . . . . . . . . . . . . . Sunnyvale, CA, USA,

. . . . . . . . . . . . . . . . . . . . . . . . .and Penang, Malaysia

Manufacturing ID (Top Boot) . . . . . . . . . . . .98F02AK

(Bottom Boot) . . . . . . . 98F02ABK

Preparation for Shipment . . . . . . . . Penang, Malaysia

Fabrication Process . . . . . . . . . . . . . . . . . . . . CS39S

Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

SPECIAL HANDLING INSTRUCTIONS

Processing

Do not expose KGD products to ultraviolet light or

process them at temperatures greater than 250°C.

Failure to adhere to these handling instructions will

result in irreparable damage to the devices. For best

yield, AMD recommends assembly in a Class 10K

clean room with 30% to 60% relative humidity.

Storage

Store at a maximum t emperatu re of 30 °C in a nitrogen-

purged cabinet or vacuum-sealed bag. Observe all

standard ESD handling procedures.

Am29F400B Known Good Die 9

SUPPLEMENT

TERMS AND CONDITIONS OF SALE FOR

AMD NON-VOLATILE MEMORY DIE

All transactions relating to unpackaged die under this

agreement shall be subject to AMD’s standard terms

and conditions of sale, or any revisions thereof, which

revisions AMD reser ves the r ight to make at any time

and from time to time. In the event of conflict between

the prov isions of AMD’s standard terms and conditions

of sale and this agreement, the terms of this agreement

shall be controlling.

AMD warrants unpackaged die of its manufacture

(“Known Good Die” or “Die”) against defective mate-

rials or workmanship for a per iod of one (1) year from

date of shipment. This warranty does not extend

beyond the first purchaser of said Die. Buyer assumes

full responsibility to ensure compliance with the

appropriate handling, assembly and processing of

Known Good Die (including but not limited to proper

Die preparation, Die attach, wire bonding and related

assembly and test activities), and compliance with all

guidelines set for th in AMD’s specifications for Known

Good Die, and AMD assumes no responsibility for envi-

ronmental effects on Known Good Die or for any

activity of Buyer or a third party that damages the Die

due to improper use, abuse, negligence, improper

installation, accident, loss, damage in transit, or unau-

thorized repair or alteration by a person or entity other

than AMD (“Warranty Exclusions”).

The liability of AMD under this warranty is limited, at

AMD’s option, solel y to repair the Die, to se nd replace-

ment Die, or to make an appropriate credit adjustment

or refund in an amount not to exceed the original pur-

chase price actually paid for the Die returned to AMD,

provided that: (a) AMD is promptly notified by Buyer in

writing during the applicable warranty period of any

defect or nonconformity in the Known Good Die; (b)

Buyer obtains authorization from AMD to return the

defective Die; (c) the defective Die is returned to AMD

by Buyer in accordance with AMD’s shipping instruc-

tions set forth below; and (d) Buyer shows to AMD’s

satisfaction that such alleged defect or nonconformity

actually exists and was not caused by any of the above-

referenced Warra nty Exclusions. Buyer shall ship such

def ectiv e Die to AMD via AMD’s carrier, collect. Risk of

loss will transfer to AMD when the defective Die is pro-

vided to AMD’s carrier. If Buyer fails to adhere to these

warr anty returns guidelines, Buyer shall assume all risk

of loss and shall pay for all freight to AMD’s specified

location. The aforementioned provisions do not extend

the original warranty period of any Known Good Die

that has either been repaired or replaced by AMD.

WITHOUT LIMITING THE FOREGOING, EXCEPT T O

THE EXTENT THAT AMD EXPRESSLY WARRANTS

TO BUYER IN A SEPARATE AGREEMENT SIGNED

BY AMD, AMD MAKES NO WARRANTY WITH

RESPECT TO THE DIE’S PROCESSING OF DATE

DATA, AND SHALL HAVE NO LIABILITY FOR

D AMA GES OF ANY KIND, UNDER EQUITY, LAW, OR

ANY OTHER THEORY, DUE TO THE FAILURE OF

SUCH KNOWN GOOD DIE TO PROCESS ANY PAR-

TICULAR DATA CONTAINING DATES, INCLUDING

DATES IN AND AFTER THE YEAR 2000, WHETHER

OR NOT AMD RECEIVED NOTICE OF THE POSSI-

BILITY OF SUCH DAMAGES.

THIS WARRANTY IS EXPRESSED IN LIEU OF ALL

OTHER WARRANTIES, EXPRESSED OR IMPLIED,

INCLUDING TH E IMPLIED W ARRANT Y OF FITNESS

FOR A PARTICULAR PURPOSE, THE IMPLIED

WARRANTY OF MERCHANTABILITY AND OF ALL

OTHER OBLIGATIONS OR LIABILITIES ON AMD’s

PART, AND IT NEITHER ASSUMES NOR AUTHO-

RIZES ANY OTHER PERSON TO ASSUME FOR

AMD ANY OTHER LIABILITIES. THE FOREGOING

CONSTITUTES THE BUYER’S SOLE AND EXCLU-

SIVE REMEDY FOR THE FURNISHING OF DEFEC-

TIVE OR NON CONFORMING KNOWN GOOD DIE

AND AMD SHALL NOT IN ANY EVENT BE LIABLE

FOR INCREASED MANUFACTURING COSTS,

DOWNTIME COSTS, DAMAGES RELATING TO

BUYER’S PROCUREMENT OF SUBSTITUTE DIE

(i.e., “COST OF COVER”), LOSS OF PROFITS, REV-

ENUES OR GOODWILL, LOSS OF USE OF OR

DAMAGE TO ANY ASSOCIATED EQUIPMENT, OR

ANY OTHER INDIRECT, INCIDENTAL, SPECIAL

OR CONSEQUENTIAL DAMAGES BY REASON OF

THE FACT THAT SUCH KNOWN GOOD DIE SHALL

HAVE BEEN DETERMINED TO BE DEFECTIVE OR

NON CONFORMING.

Buyer agrees that it w ill make no warranty representa-

tions to its customers which exceed those given by

AMD to Buyer unless and until Buyer shall agree to

indemnify AMD in writing for any claims which exceed

AMD’s warranty.

Known Good Die are not designed or authorized for

use as components in life suppor t appliances, devices

or systems where malfunction of the Die can reason-

ably be expected to result in a personal injur y. Buyer’s

use of Known Good Die for use in life support applica-

tions is at Buyer’s own risk and Buyer agrees to fully

indemnify AMD for any damages resulting in such use

or sale.

10 Am29F400B Known Good Die

SUPPLEMENT

REVISION SUMMARY

Revision A (May 1997)

Initial release.

Revision B (January 1998)

F ormatted to match curr ent template. Updated Distinc-

tive Characteristics and General Description sections

using the current main data sheet. Updated for CS39

process technology.

Revision B+1 (February 1998)

Distinctive Characteristics

The minimu m guarantee per sector i s now 1 million cycle s.

Global

Added -75 and -90 speed options.

Pad Description

Corrected coordinates for pads 2, 19, 22, 35, 40, and 42.

Physi cal Specifications

Changed die thickness specif icat ion to ~20 mils.

Revision B+2 (May 1998)

Die Pad Locations

Moved AMD logo to abov e pad 23.

Revision C (June 1998)

Distinctive Characteristics

Changed “Manufactured on 0.35 µm process technology”

to “Manufactured on 0.32 µm process t echnology”.

General Description

Third paragraph:

Changed “AMD’s 0.35 µm process

technology” to “AMD’s 0.32 µm process technology”.

Die Photograph

Replaced with photograph of Die Revi sion 2.

Die Pad Locations

Corrected the location of the AMD logo to abov e pad 22

from pad above pad 13. Modified figure to match new

die photograph.

Pad Description

Replaced tabl e with new pad coordinates.

Physi cal Specifications

Die Dimensions:

Changed to 135 mils x 198 mils, 3.43

mm x 5.03 mm from 141.34 mils x 207.48 mils, 3.59

mm x 5.27 mm.

Die Thickness:

Added ~500 µm.

Pad Area Free of Passivation:

Changed to 20.85 mils2

and 13,433 µm2 from 15.52 mils2 and 10,000 µm2.

Passivation:

Changed to SiN/SOG/SiN from Nitride/

SOG/Nitride.

Manufacturing Information

Manuf acturing ID:

Changed to 98F02AK (top boot) and

98F02ABK (bottom boot) from 98965AK (top boot ) and

98965ABK (bottom boot).

Fabrication Process:

Changed to CS39S from CS39.

Die Revision:

Changed to 2 from 1.

Revision C+1 (September 1998)

Page 5, Ordering Information

Package Type and Minimum Order Quantity

: Changed

W affle P ac k to 140 die per 5 tr ay stack f rom 180 die per

5 tra y stac k. Changed Gel-P ak® Die Tra y to 594 die per

6 tra y stack from 378 die per 6 tray stack. Changed Sur-

ftape™ (Tape and Reel) to 2500 per 7-inch reel from

1800 per 7-inch reel.

Page 7, Ph ysical Specifications

Die Dimensions

: Changed to 3.42 mm x 5.02 mm from

3.43 mm x 5.03 mm.

Bond Pad Size:

Changed to 4.7 mils x 4.7 mils and

119.7 µm x 119.7 µm from 3.74 mils x 3.74 mils and

95 µm x 95 µm.

Pad Area Free of Passivation:

Changed to 13.98 mils2

and 9,025 µm2 from 20.85 mils2 and 13,433 µm2.

Bond P ad Metallization

: Changed to Al/Cu from Al/Cu/Si.

Page 7, Manufacturing Information

Manufacturing ID (Top Boot)

: Changed to 98F02AK

from 98F02A.

Revision D (November 1998)

Global

Revised document specifications for die shrink from

0.35 µm to 0.32 µm process technology.

Terms and Conditions

Replaced warranty with new vers ion.

Revision E (December 1998)

P a ckaging Information

Added section. Moved orientation information from die

photogr aph section into this section.

Revision E+1 (February 1999)

Die Pad Locations

Corrected top row of pad callouts.

Revision E+2 (June 14, 1999)

Physical Specifications

Corrected the bond pad dimensions.

Am29F400B Known Good Die 11

SUPPLEMENT

Revision E+3 (July 12, 1999)

Ordering Information

Corrected the die re vision in dicated in the e xample and

the valid combinations to 2.

Revision E+4 (November 17, 1999)

Distinctive Characteristi cs, Ordering Inf ormati o n,

DC Operating Conditions

Added note to contact AMD for higher temperatrure

range.

Revision E+5 (June 27, 2001)

Manufacturing Information

Added Penang, Malaysia as a test facility (ACN2016).

Trademarks

AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.

Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.