MOTOROLA Order this document by 2N6504/D SEMICONDUCTOR TECHNICAL DATA 2N6504 thru 2N6509* Thyristors Silicon Controlled Rectifiers *Motorola preferred devices . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. SCRs 25 AMPERES RMS 50 thru 800 VOLTS * Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability * Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability * Blocking Voltage to 800 Volts * 300 A Surge Current Capability G K A CASE 221A-04 (TO-220AB) STYLE 3 MAXIMUM RATINGS (TJ = 25C unless otherwise noted.) Rating * Peak Forward and Reverse Blocking Voltage(1) (Gate Open, TJ = 25 to 125C) 2N6504 2N6505 2N6506 2N6507 2N6508 2N6509 Forward Current (TC = 85C) (180 Conduction Angle) Symbol Value VDRM, VRRM Unit Volts 50 100 200 400 600 800 IT(RMS) IT(AV) 25 16 Amps Peak Non-repetitive Surge Current -- 8.3 ms (1/2 Cycle, Sine Wave) 1.5 ms ITSM 300 350 Amps Forward Peak Gate Power PGM 20 Watts PG(AV) 0.5 Watt IGM 2 Amps TJ -40 to +125 C Tstg -40 to +150 C Symbol Max Unit RJC 1.5 C/W Forward Average Gate Power Forward Peak Gate Current Operating Junction Temperature Range Storage Temperature Range *THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case *Indicates JEDEC Registered Data. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Thyristor Device Data Motorola, Inc. 1995 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit -- -- -- -- 10 2 A mA VTM -- -- 1.8 Volts IGT -- -- -- 25 40 75 mA * Gate Trigger Voltage (Continuous dc) (Anode Voltage = 12 Vdc, RL = 100 Ohms, TC = -40C) VGT -- 1 1.5 Volts Gate Non-Trigger Voltage (Anode Voltage = Rated VDRM, RL = 100 Ohms, TJ = 125C) VGD 0.2 -- -- Volts * Holding Current (Anode Voltage = 12 Vdc, TC = -40C) IH -- 35 40 mA * Turn-On Time (ITM = 25 A, IGT = 50 mAdc) tgt -- 1.5 2 s Turn-Off Time (VDRM = rated voltage) (ITM = 25 A, IR = 25 A) (ITM = 25 A, IR = 25 A, TJ = 125C) tq -- -- 15 35 -- -- -- 50 -- * Peak Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) IDRM, IRRM TJ = 25C TJ = 125C * Forward "On" Voltage(1) (ITM = 50 A) * Gate Trigger Current (Continuous dc) (Anode Voltage = 12 Vdc, RL = 100 Ohms) TC = 25C TC = -40C Critical Rate of Rise of Off-State Voltage (Gate Open, Rated VDRM, Exponential Waveform) dv/dt s V/s *Indicates JEDEC Registered Data. 1. Pulse Test: Pulse Width p 300 s, Duty Cycle p 2%. FIGURE 2 -- MAXIMUM ON-STATE POWER DISSIPATION 32 130 P(AV) , AVERAGE POWER (WATTS) TC , MAXIMUM CASE TEMPERATURE ( C) FIGURE 1 -- AVERAGE CURRENT DERATING 120 = CONDUCTION ANGLE 110 100 = 30 90 60 90 180 dc 180 90 dc 16 TJ = 125C 8.0 0 80 0 2 = CONDUCTION ANGLE 60 = 30 24 4.0 8.0 12 16 IT(AV), ON-STATE FORWARD CURRENT (AMPS) 20 0 4.0 8.0 12 16 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) 20 Motorola Thyristor Device Data FIGURE 3 -- MAXIMUM FORWARD VOLTAGE FIGURE 4 -- MAXIMUM NON-REPETITIVE SURGE CURRENT 300 I TSM , PEAK SURGE CURRENT (AMP) 100 70 50 30 125C i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 20 25C 10 7.0 1 CYCLE 275 250 225 TC = 85C f = 60 Hz 200 SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 175 1.0 5.0 2.0 3.0 4.0 6.0 8.0 10 NUMBER OF CYCLES 3.0 FIGURE 5 -- CHARACTERISTICS AND SYMBOLS 2.0 +I 1.0 0.7 0.5 REVERSE BLOCKING REGION 0.3 -V 0.2 IT VT IH IDRM IRRM VRRM 0.1 0 0.4 0.8 1.2 1.6 2.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 2.4 2.8 REVERSE AVALANCHE REGION FORWARD BREAKOVER POINT -I VDRM FORWARD BLOCKING REGION +V r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) FIGURE 6 -- THERMAL RESPONSE 1.0 0.7 0.5 0.3 0.2 ZJC(t) = RJC * r(t) 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1.0 Motorola Thyristor Device Data 2.0 3.0 5.0 10 20 30 50 t, TIME (ms) 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k 3 TYPICAL TRIGGER CHARACTERISTICS FIGURE 8 -- GATE TRIGGER VOLTAGE 50 40 VGT , GATE TRIGGER VOLTAGE (VOLTS) 1.1 OFF-STATE VOLTAGE = 12 V 30 20 10 7.0 5.0 -60 -40 -20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (C) 120 1.0 0.9 0.8 0.7 0.6 0.5 0.4 -60 140 OFF-STATE VOLTAGE = 12 V -40 -20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (C) 120 140 FIGURE 9 -- HOLDING CURRENT 50 40 I H , HOLDING CURRENT (mA) IGT , GATE TRIGGER CURRENT (mA) FIGURE 7 -- GATE TRIGGER CURRENT 30 20 10 7.0 5.0 -60 -40 -20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (C) 4 Motorola Thyristor Device Data PACKAGE DIMENSIONS B -T- F T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. C S 4 Q A 1 2 3 H STYLE 3: PIN 1. 2. 3. 4. U K Z L V R G J D N CATHODE ANODE GATE ANODE DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.055 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.39 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 CASE 221A-04 (TO-220AB) Motorola Thyristor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 Motorola Thyristor Device Data *2N6504/D* 2N6504/D