ISOLATED COLLECTOR VOUT WMT Tie Ere) P Aa tt WED 0 TE tod Th nl a Md nil a i Tl lic i POWER TRANSISTORS LINEAR h,;;, FROM 50 mA TO 5 AMPS HIGH FREQUENCY f, 50 MHz (MINIMUM) AT 1 AMP LOW SATURATION VOLTAGE AT MAXIMUM COLLECTOR CURRENT HIGH POWER, 30 WATTS DISSIPATION AT T. = 100C HIGH VOLTAGE BVccojsus; == 70 VOLTS (MINIMUM) ABSOLUTE MAXIMUM RATINGS AT 25C CASE TEMPERATURE (unless otherwise noted) POWER TRANSISTORS ENGINEERING BULLETIN TYPE 2IN3744 THRU 2N3752, 5 AMP NPN SILICON PLANAR 1-33-04 QN374G-PF THRU 2N3752 TORQUE- SEATING PLANE 10-32 UNF-2A 01697 MAX PITCH OL Q140 MAX STUD olos ALL OIMENSIONS IN INCHES 0o65 0400 6348 ft ~ 0040 DA 0250 imax / 0.437 a370 18 IN-L8S ee F S 0360 E> 0330 FTO} yy 0078 MAX 0065 \ 0.455 0675 004004 0400 0575 3 TERMINALS PACKAGE TO-III 0437 0424 TERMINAL CONNECTIONS : fase nn E COLLECTOR 4 CASE EUR gee ~ | QN3744 ona7as - |. 2Na746 wo RATING ~ SYMBOL 2N3747 2N3746 | 2N3749 UNIT - oe 2N3750 2N3751 2N3752 -- CollectorBase Voltage Vso 60 80 100 Volts EmltterBase Voltage Ves0 7 8 8 Volts CollectorEmitter Voltage Veco 40 60 80 Volts Collector Current Ic 5 5 5 Amps Base Current ls 0.5 0.5 0.5 Amps Dissipation at 100C Case Po 30 30 30 Watts Linear Derating Factor 300 300 300 mw/C Storage Temperature Range Titg 65 to 200 C Operating Junction Temperature T; 200 200 200 C PULSE RESPONSE MEASUREMENT CIRCUIT 50n Vee 225 V ie 1A Van 2100 V Vet 7~'y2= 2N3744 thru 2N3752 (Unsaturated) 20n 100mA CIRCUIT NO. 1 PIRGO ELECTRONICS INC. A SPRAGUE ELECTRIC COMPANY AFFILIATE 130 CENTRAL AVENUE FARMINGDALE. NEW YORK 13735 , 77ah to Mt do ia st aM TiLK VT Vl th ht Amine 2 age: oe AT ta ag TYPE 2N3744 THRU 2N3752 5 AMP NPN SILICON PLANAR POWER TRANSISTORS fe ited eased sehen liek dame teas ust tae a ed bad wos Poekd Ca aratae ae TYPES 2N3744, 2N3747, 2N3750 ELECTRICAL CHARACTERISTICS (25C Case temperature unless otherwise noted) se. . ye LIMIT: ~*~ .* | CONDITIONS J i. oS wa PMA. BVc19 to = 10 WA 60 BVes0 fe == 10 pA 7 BV ceo Ice =10 mA 40 loex Vee = 40 V, Vee = 0.5 V, Te = 150C 50 Vee = 60 V, Vee = 0.5 V 10 leso Vos = 30 V, 1, = 0 0.1 ' Ve =7V 10 Es Ves =5V 0.1 BVecotsuy* lc = 100 mA, |, =0 30 Volts leto I, =0, Vee =3830V 100 BA 2N3744 15 hre Ie == 10 MA, Vee = 2 V 2N3747 30 2N3750 75 2N3744 20 60 lc= 1A, Vo =5V 2N3747 40 120 . 2N3750 100 300 2N3744 10 hre* Ige= 1 A, Veg = 2V, Te = 58C | 2N3747 15 2N3750 30 2N3744 10 Ic = 5A, Vee =5V 2N3747 15 2N3759 20 V . {c= 1A, 1, = 100 mA 0.25 Volts cele lo= 6 A, |, = 500 mA 2 Volts Vactiaty I= 1 A, {, =100 mA 1.2 Volts Vae* lo = 1A, Veg =5V 1.2 Volts 2N3744 3 |r| Vee = 10 V, le = 1A, f= 10 MHz 2N3747 4 2N3750 5 2N3744 20 70 He Vee = 5 V, fe = 50 mA, f = 1 KHz 2N3747 40 140 2N3750 100 350 Cop Veg = 10 V, Ie = 0, f == 1 MHz 150 pf 2N3744 120 nsec t, See Circuit No. 4 2N3747 80 nsec 2N3750 80 nsec t, See Circuit No. 1 60 nsec tr See Circuit No. 1 80 nsec *Pulsed < 330 usec; = 2% duty cycle. 10 TT 7 Tgsioorc 4 2 4 : a = MAX. VcEQ 4 q Hi 2 { + M4 ~s, 5 Tp=tms,d=0.5(50%) XT" wi LJ aa [TN ec 3 O7 T TE 2N3744, 2N3747, 2N3750 ~ oa D.C. OPERATION 7\\ MAXIMUM SAFE OPERATING REGION 5 . \ > ul + 02 oO ~ Oo = Ol 2 = OO7F- oer Yeo 'S % . PELTGe BASED With AE Pero . = 004 | be EMITTER AND THE COLLECTOR { BASE -VOLTAGE RATING IS HOT EXCEEDED. 2 0.02 oot 7 0 20 40 70100 ag _ Vog COLLECTOR-EMITTER VOLTAGE VOLTS __ wt lm ep lt ~ AEP thosety mata Moe ee ace dae i Sins Soa cerned ag DE Boou3sse noO004% oS 133.09 TYPE 2N3744 THRU 2N3752 73 35-0" 5 AMP NPN SILICON PLANAR O . POWER TRANSISTORS A P IT ELECTRONICS INC Jab eiaek a carah daar a a Silas ages alle te hoa re TYPES 2N3745, 2N3748, 2N3751 ELECTRICAL CHARACTERISTICS (25 C temperature unless otherwise noted) : ya oe EP OE ; RS? WN, oo FE BVecro Io = 10 pA 80 BV eso I; == 10 nA 8 BVcto . Ile =10mA 60 Vee == 60 V, Vpe == 0.5 V, Te = 150C loex Vee = 80 V, Vez = -0.5 V Ico Vox = 60 V, 1p == 0 ' Vee =8V 80 Veg = 5 V BV ceo jsuy)* lo = 100 mA, 1, = 0 50 Volts leto tp =0, Voge = 50 V 100 BA 2N3745 15 tre Io= 10 MA, Vee = 2 V 2N3748 30 2N3751 75 . 2N3745 20 60 le=1A,Vee=5V 2N3748 40 120 . 2N3751 100. 300 . 2N3745 10 Hee* -- te 1A, Vee = 2 V, Te = 55C 2N3748 15 . 2N3751 30 2N3745 10 lo = 5A, Veg = 5 V 2N3748 15 2N3751 20 - lo==1 A, lp = 100 mA 0.25 Volts Vee {sat} = = lo = 5A, ts = 500 mA 2 Volts Var {at le = A, te = 100 mA 1.2 Volts al Vie* le=1A, Voge =5V 1.2 Volts . 2N3745 3 |n..| Vee == 10 V, Io = 1 A, f= 10 MHz 2N3748 4 2N3751 5 2N2745 20 70 hte Vee = 5 V, Io = 50 mA, f = 1 KHz } 2N3748 40 140 2N3751 100 350 Cos Vou = 10 V, te = 0, f = 1 MHz 150 pf 2N3745 120 nsec t, See Circult No. 1 2N3748 80 nsec . 2N3751 80 nsec t, See Circuit No. 4 60 nsec t; See Circult No. 1 80 nsec *Pulsed = 330 psec; = 2% duty cycle. ie) TT 7 Tesioorc n 4 Sy. 4 x Qa N T = MAX V; ETT 7 2 | Pst 5 Tp=O05ms,d=01(10%) a Z q o I A te \ 2 0.7 A) Tp=Ims,d=05(50%) +c" 2N3745, 2N3748, 2N3751 x 4 ++-+ n MAXIMUM SAFE OPERATING REGION 5 DC. OPERATION \ \ . a 02 a 8 \ = Ol = O07 F- orenation agove MAXIMUM Yegg IS [3 3 re OS 3 S O04F tne emitter and THE comectcr ae ! BASE-VOLTAGE RATING IS NOT EXCEEDEO 002 ool | 2 4 7b) 20 40 70100 Vce ~COLLECTOR-EMITTER VOLTAGE ~VOLTSee TL 5 TYPE 2N3744 THRU 2N3752 - x ; 77? P I ELECTRONICS INC d> 5 AMP NPN SILICON PLANAR POWER TRANSISTORS Re ee eee ee TYPES 2N3746, 2N3749, 2N3752 em, ELECTRICAL CHARACTERISTICS (25 C temperature unless otherwise noted) J LiMiTs . CONDITIONS - UNIT Pat ity __. MIN. MAX. BVeso 100 Volts BVeso 8 Volts BVceo 80 Volts Vee = 60 V, Veg = 0.5 V, Te = 150C 50 LA loex Vee = 100 V, Vee = 0.5 V 10 pA leso Voce = 60 V, Ie = 0 0.1 uA Veg == 8 V 10 BA leso a Vee = 5 V 0.1 BA BV ceo tous te = 100 mA, |; =0 70 Volts leeo fp = 0, Vee = 50 V 100 uA 2N3746 15 hee Io = 10 MA, Veg = 2 V 2N3749 30 2N3752 75 2N3746 20 60 lc= 1A, Vee =5V 2N3749 40 120 2N3752 100 300 ; 2N3746 10 Hee* fo== 1A, Voge = 2 V, To == 55C 2N3749 15 so, 2N3752 30 2N3746 10 Io = 5A, Vee = 5 V 2N3749 15 2N3752 20 Vv ' tc = 1A, ly = 100 mA 0.25 volts CE frat [5 =5 A, |; = 500 mA 2 Volts Vee teat le = 1A, |; == 100 mA 1.2 Volts Vee* lg == 1A, Veg = 5 V 1.2 Volts 2N3746 3 "3 [h..| Veep = 10 V, Io = 1 A, f= 10 MHz 2N3749 4 Big 2N3752 5 2N3746 20 70 Rte Vee = 5 V, Ie = 50 mA, f = 1 KHz 2N3749 40 140 2N3752 100 350 Cor Vcg = 10 V, |, = 0, f = 1 MHz 150 pf 2N3746 120 nsec t, See Circuit No. 4 2N3749 80 nsec 2N3752 80 nsec t, See Circult No. 1 60 nsec t, See Circuit No. 1 80 nsec *Pulsed = 330 nse0; = 2% duty cycle. T TT 1 7 Tesloore 2 4 W _ A | = MAX VcEeQ" KT i 7 of 4 P TAN AL 5 Tp+05ms,d=0110%) YET Information furnished by : yu | {| of | 4 \ PIRGO is believed to be | \ accurate and reliable. Go 07 r tt ry However, no responsibil- Tp=Ims,d=0.5(50%) TY 4 \ {4 ity is assumed by PIRGO o 04 ++++ T for its use; nor for any 9 oc opERATION " \ infringments of patents 2N3746, 2N3749, 2N3752 4 oe \ or other rights of third 2 parties which may result MAXIMUM SAFE OPERATING REGION 8 \ from its use. No license = or is granted by implication 2 . or otherwise under any SOT renusgace if We bist 1s Sense patent or patent rights of q VOLTASE-AIASEO WITH RESPECT TO IRGO. S OO4T tee eaten ano me coecton ! BASE-YOLTAGE RATING IS HOT EXCEEDED uo ~ 002 ool { 2 4 70 2 40 7010 Vcgp ~COLLECTOR-EMITTER VOLTAGE VOLTS FOR ADDITIONAL INFORMATION, CONTACT YOUR LOCAL SPRAGUE SALES ENGINEER. ae ne a eee ae ee, oC 2239 - | - an ~~ tt Om ease BRIAR LEAT RALIn[G bIA a i eo yy, f Ff rs