Vishay Siliconix
SUM45N25-58
New Product
Document Number: 72314
S-70311-Rev. C, 12-Feb-07
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1
N-Channel 250-V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® Power MOSFETS
• 175 °C Junction Temperature
• New Low Thermal Resistance Package
APPLICATIONS
• Primary Side Switch
• Plasma Display Panel Sustainer Function
PRODUCT SUMMARY
V(BR)DSS (V) rDS(on) (Ω)I
D (A)
250 0.058 at VGS = 10 V 45
0.062 at VGS = 6 V 43
TO-263
SDG
Top View
Ordering Information: SUM45N25-58-E3 (Lead (Pb)-free)
D
G
S
N-Channel MOSFET
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Guaranteed by design
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 250
V
Typical Avalanche Voltaged VDS (Avalanche)Ty p 300
Gate-Source Voltage VGS ± 30
Continuous Drain Current (TJ = 175 °C) TC = 25 °C ID
45
A
TC = 125 °C 25
Pulsed Drain Current IDM 90
Avalanche Current IAR 35
Repetitive Avalanche EnergyaL = 0.1 mH EAR 61 mJ
Maximum Power DissipationaTC = 25 °C
PD
375b
W
TA = 25 °Cc3.75
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient (PCB Mount)cRthJA 40 °C/W
Junction-to-Case (Drain) RthJC 0.4
RoHS
COMPLIANT
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Document Number: 72314
S-70311-Rev. C, 12-Feb-07
Vishay Siliconix
SUM45N25-58
New Product
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min
Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 µA 250 V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 24
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 30 V ± 250 nA
Zero Gate Voltage Drain Current IDSS
VDS = 250 V, VGS = 0 V 1
µA
VDS = 250 V, VGS = 0 V, TJ = 125 °C 50
VDS = 250 V, VGS = 0 V, TJ = 175 °C 250
On-State Drain CurrentaID(on) V
DS ≥ 5 V, VGS = 10 V 70 A
Drain-Source On-State ResistancearDS(on)
VGS = 10 V, ID = 20 A 0.047 0.058
Ω
VGS = 10 V, ID = 20 A, TJ = 125 °C 0.121
VGS = 10 V, ID = 20 A, TJ = 175 °C 0.163
VGS = 6 V, ID = 15 A 0.049 0.062
Forward Transconductanceagfs VDS = 15 V, ID = 20 A 70 S
Dynamicb
Input Capacitance Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz
5000
pFOutput Capacitance Coss 300
Reverse Transfer Capacitance Crss 170
Total Gate ChargecQg
VDS = 125 V, VGS = 10 V, ID = 45 A
95 140
nC
Gate-Source ChargecQgs 28
Gate-Drain ChargecQgd 34
Gate Resistance Rgf = 1 MHz 1.6 Ω
Tur n - O n D e l ay Timectd(on)
VDD = 100 V, RL = 2.78 Ω
ID ≅ 45 A, VGEN = 10 V, Rg = 2.5 Ω
22 35
ns
Rise Timectr220 330
Turn-Off Delay Timectd(off) 40 60
Fall Timectf145 220
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b
Continuous Current IS45 A
Pulsed Current ISM 70
Forward VoltageaVSD IF = 45 A, VGS = 0 V 1.0 1.5 V
Reverse Recovery Time trr
IF = 45 A, di/dt = 100 A/µs
150 225 ns
Peak Reverse Recovery Current IRM(REC) 12 18 A
Reverse Recovery Charge Qrr 0.9 2 µC
Document Number: 72314
S-70311-Rev. C, 12-Feb-07
www.vishay.com
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Vishay Siliconix
SUM45N25-58
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
Transconductance
Capacitance
0
20
40
60
80
100
0246810
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)I
D
VGS = 10 thru 7 V
4 V
6 V
5 V
25 °C
125 °C
0
30
60
90
120
150
0 102030405060
- Transconductance (S)gfs
ID - Drain Current (A)
TC = - 55 °C
0
1000
2000
3000
4000
5000
6000
7000
0 40 80 120 160 200
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
Ciss
Coss
Crss
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
20
40
60
80
100
0123456
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)ID
25 °C
- 55 °C
TC = 125 °C
0.00
0.02
0.04
0.06
0.08
0.10
0 20406080100
I
D
- Drain Current (A)
- On-Resistance (Ω)r
DS(on)
V
GS
= 6 V
V
GS
= 10 V
0
4
8
12
16
20
0 30 60 90 120 150 180
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
VGS
VDS = 125 V
ID = 45 A
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Document Number: 72314
S-70311-Rev. C, 12-Feb-07
Vishay Siliconix
SUM45N25-58
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Junction Temperature
Avalanche Current vs. Time
0.4
0.8
1.2
1.6
2.0
2.4
2.8
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
(Normalized)
r
DS(on)
- On-Resistance
VGS = 10 V
ID = 20 A
tin (Sec)
100
10
0.00001 0.001 0.1 1
0.1
(a)I Dav
0.01
1
0.0001
IAV (A) at TA = 25 °C
IAV (A) at TA = 150 °C
Source-Drain Diode Forward Voltage
Drain Source Breakdown
vs. Junction Temperature
TJ
= 150 °C
VSD
- Source-to-Drain V oltage (V)
- Source Current (A)IS
100
10
1
0.3 0.6 0.9 1.20
TJ = 25 °C
230
240
250
260
270
280
290
300
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
(V)V
(BR)DSS
ID = 1.0 mA
Document Number: 72314
S-70311-Rev. C, 12-Feb-07
www.vishay.com
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Vishay Siliconix
SUM45N25-58
New Product
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72314.
Maximum Avalanche and Drain Current
vs. Case Temperature
0
10
20
30
40
50
0 25 50 75 100 125 150 175
TC - Ambient Temperature (°C)
- Drain Current (A)I
D
Safe Operating Area, Case Temperature
VDS - Drain-to-Source Voltage (V)
100
10
0.1 1 10 1000
Limited
by rDS(on)
0.1
TC = 25 °C
Single Pulse
- Drain Current (A)I
D
1 ms
10 ms
100 ms
dc
10 µs
100 µs
1
100
Normalized Thermal Transient Impedance, Junction-to-Case
S
q
uare Wave Pulse Duration
(
sec
)
2
1
0.1
0.01
10-4 10-3 10-2 10-1 1
Normalized Effective Transient
Thermal Impedance
0.2
0.1
Duty Cycle = 0.5
Single Pulse
0.05
0.02
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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