©2003 Fairchild Semiconductor Corporation 1N957B - 1N991B, Rev. D1
Zeners 1N957B - 1N991B
Electrical Characteristics TA=25°C unless otherwise noted
Device VZ (Volts) (Note 1) ZZ (Ω
ΩΩ
Ω) (Note 2) IR @ VRIZM (mA)
(Note 3)
Min. Typ. Max. @ IZ
(mA) ZZ @ IZZZK @ IZK µ
µµ
µAVolts
Ω
ΩΩ
ΩmA
1N957BT
1N958BT
1N959BT
1N960BT
1N961BT
6.46
7.125
7.79
8.645
9.5
6.8
7.5
8.2
9.1
10
7.14
7.875
8.61
9.555
10.5
18.5
16.5
15
14
12.5
4.5
5.5
6.5
7.5
8.5
700
700
700
700
700
1.0
0.5
0.5
0.5
0.25
150
75
50
25
10
5.2
5.7
6.2
6.9
7.6
47
42
38
35
32
1N962BT
1N963BT
1N964BT
1N965BT
1N966BT
10.45
11.4
12.35
14.25
15.2
11
12
13
15
16
11.55
12.6
13.65
15.75
16.8
11.5
10.5
9.5
8.5
7.8
9.5
11.5
13
16
17
700
700
700
700
700
0.25
0.25
0.25
0.25
0.25
5
5
5
5
5
8.4
9.1
9.9
11.4
12.2
28
26
24
21
19
1N967BT
1N968BT
1N969B
1N970B
1N971B
17.1
19
20.9
22.8
25.65
18
20
22
24
27
18.9
21
23.1
25.2
28.35
7.0
6.2
5.6
5.2
4.6
21
25
29
33
41
750
750
750
750
750
0.25
0.25
0.25
0.25
0.25
5
5
5
5
5
13.7
15.2
16.7
18.2
20.6
17
15
14
13
11
1N972B
1N973B
1N974B
1N975B
1N976B
28.5
31.35
34.2
37.05
40.85
30
33
36
39
43
31.5
34.65
37.8
40.95
45.15
4.2
3.8
3.4
3.2
3.0
49
58
70
80
93
1000
1000
1000
1000
1500
0.25
0.25
0.25
0.25
0.25
5
5
5
5
5
22.8
25.1
27.4
29.7
32.7
10
9.2
8.5
7.8
7.0
1N977B
1N978B
1N979B
1N980B
1N981B
44.65
48.45
53.2
58.9
64.6
47
51
56
62
68
49.35
53.55
58.8
65.1
71.4
2.7
2.5
2.2
2.0
1.8
105
125
150
185
230
1500
1500
2000
2000
2000
0.25
0.25
0.25
0.25
0.25
5
5
5
5
5
35.8
38.8
42.6
47.1
51.7
6.4
5.9
5.4
4.9
4.5
Zeners
1N957B - 1N991B
Absolute Maximum Ratings * TA = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of the diode may be impaired.
Symbol Parameter Value Units
PDPower Dissipation
@ TL ≤ 75°C, Lead Length = 3/8” 500 mW
Derate above 75°C4.0mW/°C
TJ, TSTG Operating and Storage Temperature Range -65 to +200 °C
Tolerance = 5%
DO-35 Glass case
COLOR BAND DENOTES CATHODE
©2003 Fairchild Semiconductor Corporation 1N957B - 1N991B, Rev. D1
Zeners 1N957B - 1N991B
Electrical Characteristics (Continued) TA=25°C unless otherwise noted
Notes:
1. Zener Voltage (VZ) Measurement
Nominal zener voltage is measured with the device junction in the themal equilibrium at the lead temperature (TL) at 30°C ± 1°C and 3/8” lead length.
2. Zener Impedance (ZZ) Deri vation
ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current applied. T he specified limits are for IZ(ac) = 0. 1 IZ(dc) with the ac
frequency = 60Hz.
3. Maximum Zener Current Ratings (IZM)
The maximum current handling capability on a worst case basis is limited by the actual zener voltage at the operation point and the power derating curve.
Device VZ (Volts) (Note 1) ZZ (Ω
ΩΩ
Ω) (Note 2) IR @ VRIZM (mA)
(Note 3)
Min. Typ. Max. @ IZZZ @ IZZZK @ IZK µ
µµ
µAVolts
Ω
ΩΩ
ΩmA
1N982B
1N983B
1N984B
1N985B
1N986B
71.25
77.9
86.45
95
104.5
75
82
91
100
110
78.75
86.1
95.55
105
115.5
1.7
1.5
1.4
1.3
1.1
270
330
400
500
750
2000
3000
3000
3000
4000
0.25
0.25
0.25
0.25
0.25
5
5
5
5
5
56.0
62.2
69.2
76.0
83.6
4.1
3.7
3.3
3.0
2.7
1N987B
1N988B
1N989B
1N990B
1N991B
114
123.5
142.5
152
171
120
130
150
160
180
126
136.5
157.5
168
189
1.0
0.95
0.85
0.80
0.68
900
1100
1500
1700
2200
4500
5000
6000
6500
7100
0.25
0.25
0.25
0.25
0.25
5
5
5
5
5
91.2
98.8
114
121.6
136.8
2.5
2.3
2.0
1.9
1.7
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Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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