2006-12-05
Rev 1.3 Page 1
BSS84PW
SIPMOS Small-Signal-Transistor
Features
·
P-Channel
·
Enhancement mode
·
Avalanche rated
·
Logic Level
·
d
v
/d
t
rated
Product Summary
Drain source voltage
V
DS -60 V
Drain-source on-state resistance
R
DS
(
on
)
8
W
Continuous drain current
I
D-0.15 A
1
3
VSO05561
2
Pin 1 PIN 2 PIN 3
GSD
Type
Package Tape and Reel
BSS84PW
PG-SOT-323
L6327:3000pcs/r.
Marking
YBs
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Value Unit
Continuous drain current
T
A
= 25 °C
I
D
-0.15 A
Pulsed drain current
T
A
= 25 °C
I
D puls
-0.6
Avalanche energy, single pulse
I
D
= -0.15 A ,
V
DD
= -25 V,
R
GS
= 25
W
E
AS
2.61 mJ
Avalanche energy, periodic limited by
T
j
max
E
AR
0.03
Reverse diode d
v
/d
t
I
S
= -0.15 A,
V
DS
= -48 V, d
i
/d
t
= 200 A/µs,
T
jmax
= 150 °C
d
v
/d
t
6kV/µs
Gate source voltage
V
GS
±20 V
Power dissipation
T
A
= 25 °C
P
tot
0.3 W
Operating and storage temperature
T
j
,
T
st
g
-55...+150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
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2006-12-05
Rev 1.3 Page 2
BSS84PW
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 3)
R
thJS - - 110 K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
R
thJA
-
-
-
-
420
350
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V
GS = 0 V,
I
D = -250 µA
V
(BR)DSS -60 - - V
Gate threshold voltage,
V
GS =
V
DS
I
D = -20 µA
V
GS(th) -1 -1.5 -2
Zero gate voltage drain current
V
DS = -60 V,
V
GS = 0 V,
T
j = 25 °C
V
DS = -60 V,
V
GS = 0 V,
T
j = 125 °C
I
DSS
-
-
-0.1
-10
-1
-100
µA
Gate-source leakage current
V
GS = -20 V,
V
DS = 0 V
I
GSS - -10 -100 nA
Drain-source on-state resistance
V
GS = -2.7 V,
I
D = -0.01 A
R
DS(on) - 10.5 25
W
Drain-source on-state resistance
V
GS = -4.5 V,
I
D = -0.12 A
R
DS(on) - 6.9 12
Drain-source on-state resistance
V
GS = -10 V,
I
D = -0.15 A
R
DS(on) - 4.6 8
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
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2006-12-05
Rev 1.3 Page 3
BSS84PW
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
£
2*
I
D*
R
DS(on)max ,
I
D=0.15A
0.08 0.16 - S
Input capacitance
C
iss
V
GS=0V,
V
DS=-25V,
f
=1MHz
- 15.3 19.1 pF
Output capacitance
C
oss - 5.8 7.3
Reverse transfer capacitance
C
rss - 3 3.8
Turn-on delay time
t
d(on)
V
DD=-30V,
V
GS=-4.5V,
I
D=-0.12A,
R
G=25
W
- 6.7 10 ns
Rise time
t
r- 16.2 24.3
Turn-off delay time
t
d(off) - 8.6 12.9
Fall time
t
f- 20.5 30.8
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD=-48V,
I
D=-0.15A - 0.25 0.38 nC
Gate to drain charge
Q
gd - 0.3 0.45
Gate charge total
Q
gV
DD=-48V,
I
D=-0.15A,
V
GS=0 to -10V
- 1 1.5
Gate plateau voltage
V
(plateau)
V
DD=-48V,
I
D=-0.15A - -3.4 - V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A=25°C - - -0.15 A
Inverse diode direct current,
pulsed
I
SM - - -0.6
Inverse diode forward voltage
V
SD
V
GS=0V,
I
F=-0.15A - -0.84 -1.12 V
Reverse recovery time
t
rr
V
R=-30V,
I
F=
l
S,
d
i
F/d
t
=100A/µs
- 23.6 35.4 ns
Reverse recovery charge
Q
rr - 11.6 17.4 nC
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2006-12-05
Rev 1.3 Page 4
BSS84PW
Power Dissipation
P
tot =
f
(
T
A)
0 20 40 60 80 100 120 °C 160
T
A
0.00
0.04
0.08
0.12
0.16
0.20
0.24
W
0.32 BSS84PW
P
tot
Drain current
I
D =
f
(
T
A)
parameter:
V
GS
³
10 V
0 20 40 60 80 100 120 °C 160
T
A
0.00
-0.02
-0.04
-0.06
-0.08
-0.10
-0.12
A
-0.16 BSS84PW
I
D
Safe operating area
I
D =
f
(
V
DS )
parameter :
D
= 0 ,
T
A = 25 °C
-10 -1 -10 0 -10 1 -10 2
V
V
DS
-3
-10
-2
-10
-1
-10
0
-10
1
-10
A
BSS84PW
I
D
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 µs
t
p = 40.0µs
Transient thermal impedance
Z
thJA =
f
(
t
p)
parameter :
D
=
t
p/
T
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3
s
t
p
0
10
1
10
2
10
3
10
K/W
BSS84PW
Z
thJC
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
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2006-12-05
Rev 1.3 Page 5
BSS84PW
Typ. output characteristic
I
D =
f
(
V
DS);
T
j=25°C
parameter:
t
p = 80 µs
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V-5.0
V
DS
0.00
-0.04
-0.08
-0.12
-0.16
-0.20
-0.24
-0.28
A
-0.36 BSS84PW
I
D
V
GS [V]
a
a -2.5
b
b -3.0
c
c -3.5
dd -4.0
e
e -4.5
f
f -5.0
g
P
tot = 0W
g -6.0
Typ. drain-source-on-resistance
R
DS(on) =
f
(
I
D)
parameter:
V
GS
0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 A-0.30
I
D
0
2
4
6
8
10
12
14
16
18
20
22
W
26 BSS84PW
R
DS(on)
V
GS [V] =
a
a
-2.5
b
b
-3.0
c
c
-3.5
d
d
-4.0
e
e
-4.5
f
f
-5.0
g
g
-6.0
Typ. transfer characteristics
I
D=
f
(
V
GS )
V
DS
³
2 x
I
D x
R
DS(on)max
parameter:
t
p = 80 µs
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0
V
GS
0.00
-0.05
-0.10
-0.15
-0.20
A
-0.30
I
D
Typ. forward transconductance
g
fs = f(
I
D);
T
j=25°C
parameter:
g
fs
0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 A -0.40
I
D
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
S
0.22
g
fs
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2006-12-05
Rev 1.3 Page 6
BSS84PW
Drain-source on-resistance
R
DS(on) = f(
T
j)
parameter:
I
D = -0.17A,
V
GS = -10 V
-60 -20 20 60 100 °C 160
T
j
0
2
4
6
8
10
12
W
16
R
DS(on)
max.
typ.
Gate threshold voltage
V
GS(th) =
f
(
T
j)
parameter:
V
GS =
V
DS,
I
D = -20 µA
-60 -20 20 60 100 °C 180
T
j
0.0
-0.5
-1.0
-1.5
V
-2.5
V
GS(th)
max.
min.
typ.
Typ. capacitances
C = f(VDS)
Parameter:
V
GS=0 V,
f
=1 MHz
0 -5 -10 -15 -20 V -30
V
DS
0
10
1
10
2
10
pF
C
C
iss
C
oss
C
rss
Forward characteristics of reverse diode
I
F =
f
(VSD)
parameter:
T
j , tp = 80 µs
0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V-3.0
V
SD
-3
-10
-2
-10
-1
-10
0
-10
A
BSS84PW
I
F
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 150 °C typ
T
j = 150 °C (98%)
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2006-12-05
Rev 1.3 Page 7
BSS84PW
Avalanche energy
E
AS =
f
(
T
j)
par.:
I
D = -0.15 A ,
V
DD = -25 V,
R
GS = 25
W
25 45 65 85 105 125 °C 165
T
j
0.0
0.5
1.0
1.5
2.0
mJ
3.0
E
AS
Typ. gate charge
V
GS =
f
(
Q
Gate)
parameter:
I
D = -0.15 A pulsed
0.0 0.2 0.4 0.6 0.8 1.0 1.2 nC 1.5
Q
Gate
0
-2
-4
-6
-8
-10
-12
V
-16 BSS84PW
V
GS
0,8
V
DS max
DS max
V
0,2
Drain-source breakdown voltage
V
(BR)DSS =
f
(
T
j)
-60 -20 20 60 100 °C 180
T
j
-54
-56
-58
-60
-62
-64
-66
-68
V
-72 BSS84PW
V
(BR)DSS
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2006-12-05
Rev 1.3 Page 8
BSS84PW
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
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For information on the types in question please contact your nearest Infineon Technologies Office.
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