© 2011 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C -100 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ-100 V
VGSS Continuous ±15 V
VGSM Transient ±25 V
ID25 TC= 25°C (Chip Capability) - 210 A
ILRMS Lead Current Limit, RMS - 200 A
IDM TC= 25°C, Pulse Width Limited by TJM - 800 A
IATC= 25°C -100 A
EAS TC= 25°C3J
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C 830 W
TJ- 55 ... +150 °C
TJM 150 °C
Tstg - 55 ... +150 °C
VISOL 50/60 Hz, RMS, t = 1minute 2500 V~
IISOL ≤ 1mA, t = 1s 3000 V~
MdMounting Torque for Base Plate 1.5/13 Nm/lb.in.
Terminal Connection Torque 1.3/11.5 Nm/lb.in.
Weight 30 g
DS100408A(01/13)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250μA -100 V
VGS(th) VDS = VGS, ID = - 250μA - 2.5 - 4.5 V
IGSS VGS = ±15V, VDS = 0V ±200 nA
IDSS VDS = VDSS, VGS = 0V - 25 μA
TJ = 125°C - 300 μA
RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 7.5 mΩ
TrenchPTM
Power MOSFET
IXTN210P10T VDSS = -100V
ID25 = - 210A
RDS(on) ≤≤
≤≤
≤ 7.5mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 200ns
P-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier miniBLOC
E153432
G
D
S
S
G = Gate D = Drain
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
zInternational Standard Package
zLow Intrinsic Gate Resistance
zminiBLOC with Aluminum Nitride
Isolation
z Avalanche Rated
zExtended FBSOA
zFast Intrinsic Recitifier
z Low RDS(ON) and QG
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zHigh-Side Switching
zPush Pull Amplifiers
zDC Choppers
zAutomatic Test Equipment
zCurrent Regulators
zBattery Charger Applications
Preliminary Technical Information
S
S
D
G
IXTN210P10T
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = - 60A, Note 1 90 150 S
Ciss 69.5 nF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 4070 pF
Crss 1100 pF
td(on) 90 ns
tr 98 ns
td(off) 165 ns
tf 55 ns
Qg(on) 740 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 200 nC
Qgd 155 nC
RthJC 0.15 °C/W
RthCS 0.05 °C/W
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V - 210 A
ISM Repetitive, Pulse Width Limited by TJM - 840 A
VSD IF = -100A, VGS = 0V, Note 1 -1.4 V
trr 200 ns
QRM 930 nC
IRM -12.4 A
IF = -105A, -di/dt = -100A/μs
VR = -100V, VGS = 0V
(M4 screws (4x) supplied)
SOT-227B (IXTN) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2011 IXYS CORPORATION, All Rights Reserved
IXTN210P10T
Fi g . 1. Output Ch ar ac ter i sti cs @ T
J
= 25ºC
-220
-200
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
-1.4-1.2-1-0.8-0.6-0.4-0.20
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 8V
- 7V
- 4
V
- 5
V
- 6
V
Fi g . 2. Extended Outp u t C h ar ac ter i sti cs @ T
J
= 25ºC
-400
-350
-300
-250
-200
-150
-100
-50
0
-10-9-8-7-6-5-4-3-2-10
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 5
V
- 6
V
- 7
V
- 4
V
Fi g . 3. Output Ch ar ac ter i sti cs @ T
J
= 125º C
-220
-200
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
-2.4-2-1.6-1.2-0.8-0.40
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 8V
- 7V
- 4V
- 6V
- 5
V
Fig. 4. R
DS(on)
Normalized to I
D
= -105A Valu e vs.
Junction T emperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= -10V
I
D
= - 210A
I
D
= -105A
Fig. 5. R
DS(on)
Normalized to I
D
= -105A Valu e vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-350-300-250-200-150-100-500
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= -10V
T
J
= 25ºC
T
J
= 125ºC
Fi g . 6. Maximum D r ai n C urr en t vs.
Case Temper atu r e
-220
-200
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
IXTN210P10T
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1000
1 10 100
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
1ms
100µs
R
DS(on)
Limit
10ms
DC
-
-
--
-
-
-
100ms
External Lead Current Limit
Fi g . 7. I n p u t Admi ttan ce
-300
-250
-200
-150
-100
-50
0
-6-5.5-5-4.5-4-3.5-3
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
50
100
150
200
250
300
-300-250-200-150-100-500
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-350
-300
-250
-200
-150
-100
-50
0
-1.4-1.3-1.2-1.1-1.0-0.9-0.8-0.7-0.6-0.5-0.4-0.3
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 100 200 300 400 500 600 700
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= - 50V
I
D
= -105A
I
G
= -1mA
Fig. 11. Capacitance
1,000
10,000
100,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MH
z
Ciss
Crss
Coss
© 2011 IXYS CORPORATION, All Rights Reserved
IXTN210P10T
Fig . 14. Resistive Tu rn - o n R ise Ti me vs.
Drain Current
80
90
100
110
120
-100-95-90-85-80-75-70-65-60-55-50
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 50V
T
J
= 25ºC
T
J
= 125ºC
Fi g. 16. R esi stive Turn -off Switch i ng Times vs.
Jun ct i o n Temp er at u r e
40
45
50
55
60
65
70
75
80
85
90
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
120
140
160
180
200
220
240
260
280
300
320
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 50V
I
D
= -100A
I
D
= - 50A
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
100
140
180
220
260
300
-100-95-90-85-80-75-70-65-60-55-50
I
D
- Amperes
t
f
- Nanoseconds
40
50
60
70
80
90
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 50V
T
J
= 125ºC
T
J
= 25ºC
Fi g . 13 . R esi s ti ve Turn -on R i se Time vs.
Junct i on Temp eratur e
70
80
90
100
110
120
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 50V
I
D
= - 50A
I
D
= -100A
Fi g . 18. R esisti ve Tur n -o ff Swi tchi n g Times vs.
Gate Resistance
0
100
200
300
400
500
12345678910
R
G
- Ohms
t
f
- Nanoseconds
0
200
400
600
800
1000
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= -10V
V
DS
= - 50V
I
D
= - 50A
I
D
= -100A
Fig . 15. R esisti ve Tu r n -on Switch in g Times vs.
Gate R esi st an ce
0
50
100
150
200
250
300
350
12345678910
R
G
- Ohms
t
f
- Nanoseconds
0
100
200
300
400
500
600
700
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= -10V
V
DS
= - 50V
I
D
= - 50A
I
D
= -100A
IXTN210P10T
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_210P10T(A9)10-26-11
Fi g . 19 . Maximum Tr an si e n t Th er mal I mped ance
0.0001
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
