© 2000 IXYS All rights reserved 1 - 2
VRSM V(BR)min
ÿ
①VRRM Anode Cathode
V V V on stud on stud
900 - 800 DS 35-08A DSI 35-08A
1300 - 1200 DS 35-12A DSI 35-12A
1300 1300 1200 DSA 35-12A DSAI 35-12A
1700 1750 1600 DSA 35-16A DSAI 35-16A
1900 1950 1800 DSA 35-18A DSAI 35-18A
① Only for Avalanche Diodes
Symbol Test Conditions Maximum Ratings
IF(RMS) TVJ = TVJM 80 A
IF(AVM) Tcase = 100°C; 180° sine 49 A
PRSM DSA(I) types, TVJ = TVJM, tp = 10 ms11kW
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 650 A
VR= 0 t = 8.3 ms (60 Hz), sine 690 A
TVJ = TVJM t = 10 ms (50 Hz), sine 600 A
VR= 0 t = 8.3 ms (60 Hz), sine 640 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 2100 A2s
VR= 0 t = 8.3 ms (60 Hz), sine 2000 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 1800 A2s
VR= 0 t = 8.3 ms (60 Hz), sine 1700 A2s
TVJ -40...+180 °C
TVJM 180 °C
Tstg -40...+180 °C
MdMounting torque 4.5-5.5 Nm
40-49 lb.in.
Weight 15 g
VRRM = 800-1800 V
IF(RMS) = 80 A
IF(AV)M = 49 A
Features
●International standard package,
JEDEC DO-203 AB (DO-5)
●Planar glassivated chips
Applications
●High power rectifiers
●Field supply for DC motors
●Power supplies
Advantages
●Space and weight savings
●Simple mounting
●Improved temperature and power
cycling
●Reduced protection circuits
Symbol Test Conditions Characteristic Values
IRTVJ = TVJM; VR = VRRM £4mA
VFIF= 150 A; TVJ = 25°C£1.55 V
VT0 For power-loss calculations only 0.85 V
rTTVJ = TVJM 4.5 mW
RthJC DC current 1.05 K/W
RthJH DC current 1.25 K/W
dSCreepage distance on surface 4.05 mm
dAStrike distance through air 3.9 mm
aMax. allowable acceleration 100 m/s2
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
DS 35 DSI 35
DSA 35 DSAI 35
Rectifier Diode
A valanche Diode
A = Anode C = Cathode
DO-203 AB
DS DSI
DSA DSAI
C
A
A
C
1/4-28UNF
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© 2000 IXYS All rights reserved 2 - 2
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2000
4000
6000
8000
1000
10000
10-3 10-2 10-1 100
0
100
200
300
400
500
600
700
800
900
1000
0.5 1.0 1.5 2.0
0
50
100
150
200
250
0 20406080
0
20
40
60
80
100
0 50 100 150 200
0
10-3 10-2 10-1 100101102
0.0
0.4
0.8
1.2
1.6
2.0
I2t
IFSM
IF
A
VFtstms
PF
W
IF(AV)M
ATamb
°C
ts
ZthJH
K/W
A2s
0 40 80 120 160 200
0
10
20
30
40
50
60
IF(AV)M
Tc
A
V
A
°C
RthJH for various conduction angles d:
dR
thJH (K/W)
DC 1.25
180°1.37
120°1.47
60°1.74
30°2.08
Constants for ZthJH calculation:
iR
thi (K/W) ti (s)
1 0.10 0.0012
2 0.25 0.1181
3 0.70 0.6540
4 0.20 2.0
DS 35 DSI 35
DSA 35 DSAI 35
Fig. 6 Transient thermal impedance junction to heatsink
Fig. 1 Forward characteristics Fig. 2 Surge overload current
IFSM: crest value, t: duration Fig. 3 I2t versus time (1-10 ms)
Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case
temperature 180° sine
TVJ = 180°C
TVJ = 180°C
TVJ = 45°C
VR = 0 V
50Hz, 80% VRRM
DC
180° sin
120°
60°
30°
typ. lim.
TVJ= 180°C
TVJ= 25°C
TVJ = 45°C
RthJA :
1.5 K/W
1.9 K/W
2.3 K/W
3.9 K/W
ase
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