2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7000BU / 2N7000TA Rev. 1.5 1
September 2016
2N7000BU / 2N7000TA
Advanced Small-Signal MOSFET
Features
Fast Switching Times
Improved Inductive Ruggedness
Lower Input Capacitance
Extended Safe Operating Area
Improved High-Temperature Reliability
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwi se noted.
Note:
1. Repetitive rating: pulse width limited by maximum junction temperature.
Part Number Marking Package Packing Method
2N7000BU 2N7000 TO-92 3L Bulk
2N7000TA 2N7000 TO-92 3L Ammo
Symbol Parameter Value Unit
VDSS Drain-to-Source Voltage 60 V
ID Continuous Drain Current (TC = 25°C) 200 mA
Continuous Drain Current (TC = 100°C) 110
IDM Drain Current Pulsed(1) 1000 mA
VGS Gate-to-Source Voltage ±30 V
TJ, TSTG Operating Junction and S torage Temperature Range -55 to 150 °C
TL Maximum Lead Temperature for Soldering Purposes,
1/8-inch from Case for 5 Seconds 300 °C
Description
These N-channel enhancement m ode field effect transis-
tors are produced using Fairchild's proprietary, high cell
density, DMOS techno logy. These produ cts minimize on-
state resistance while providing rugged, reliable, and fast
switching performance. They can be used in most appli-
cations requiring up to 400 mA DC and can deliver pulsed
currents up to 2 A. These products are particularl y suited
for low-voltage, low-current applications, such as small
servo motor control, power MOSFET gate drivers, and
other switching applications.
1. Source 2. Gate 3. Drain
TO-92
1
2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7000BU / 2N7000TA Rev. 1.5 2
Thermal Characteristics(2)
Values are at TC = 25°C unless otherwise noted.
Note:
2. Device mounted on FR-4 PCB, board size = 101.5 mm x 114.5 mm.
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Notes:
3. Pulse test: pulse width = 250 s, duty cycle 2%.
4. Essentially independent of operating temperature.
Symbol Parameter Value Unit
PD Total Power Dissipation (TC = 25°C) 400 mW
Linear Derating Factor 3.2 mW/°C
RJA Thermal Resistance, Junction to Ambient 312.5 °C/W
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Vo ltage VGS = 0 V, ID = 250 A60 V
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A0.33.9
V
VDS = VGS, ID = 1 mA 0.4 3.0
IGSS Gate-Source Leakage, Forward VGS = 15 V 100 nA
Gate-Source Lea kage, Reverse VGS = -15 V -100
IDSS Drain-to-Source Leaka ge Current VDS = 60 V 1 A
VDS = 45 V, TC = 125°C 1000
RDS(ON) Static Drain-Source
On-State Resistance(3) VGS = 10 V, ID = 0.5 A 5.0
gfs Forward Transconductance(3) VDS = 15 V, ID = 0.5 A 0.1 0.3 S
Ciss Input Capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz 30 pF
Coss Output Capacitance 12 pF
Crss Reverse Transfer Capacitance 3.0 pF
td(on) Turn-On Delay VDD = 30 V, ID = 0.5 A,
RG = 15 (3),(4)
10 ns
tr Rise Time 10 ns
td(off) Turn-Off Delay 10 ns
tf Fall Time 10 ns
2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7000BU / 2N7000TA Rev. 1.5 3
Physical Dimensions
Figure 1. 3-LEAD, TO-92, JEDEC TO-92 COMPLIANT STRAIGHT LEA D CONFIGURATION
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf.
TO-92
2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7000BU / 2N7000TA Rev. 1.5 4
Physical Dimensions (Continued)
Figure 2. 3-LEAD, TO-92, MOLDED 0.200 IN LINE SPACING LD FORM (J61Z OPTION) (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/ZA/ZA03F.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-ZA03F.pdf.
TO-92
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I77
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